Patent application number | Description | Published |
20080291766 | Memory architecture having local column select lines - A memory architecture for an array of memory cells having a plurality of sections of memory and a plurality of regions disposed between the plurality of sections of memory. Each section of memory having a plurality of memory cells arranged in rows and columns of memory and a plurality of sense amplifiers located in each of the plurality of regions. The sense amplifiers coupled to a respective column of memory. A plurality of column select lines are located in each of the plurality of regions with each column select line coupled to a group of column select switches associated with a section of memory to activate the respective column select switches. | 11-27-2008 |
20090290440 | Row Addressing - Embodiments are provided that include a row decoder, including a row activation path, having a row address converter with an output coupled to an input of a section replacement detector. Further embodiments provide a method including mapping an external row address to an internal row address, wherein the internal row address comprises a section address, determining whether a section corresponding to the section address includes an error, and if the section includes an error, converting the internal row address to a redundant row address, wherein mapping the external row address to the internal row address is initiated prior to determining whether the section replacement should be performed. | 11-26-2009 |
20100265776 | DATA BUS POWER-REDUCED SEMICONDUCTOR STORAGE APPARATUS - In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR | 10-21-2010 |
20110170365 | ROW ADDRESSING - Embodiments are provided that include a row decoder, including a row activation path, having a row address converter with an output coupled to an input of a section replacement detector. Further embodiments provide a method including mapping an external row address to an internal row address, wherein the internal row address comprises a section address, determining whether a section corresponding to the section address includes an error, and if the section includes an error, converting the internal row address to a redundant row address, wherein mapping the external row address to the internal row address is initiated prior to determining whether the section replacement should be performed. Further embodiments include a method for receiving a row address for a row in a memory section including a non-2̂n number of normal rows and mapping the row address to a redundant row address by subtracting a value from the row address. | 07-14-2011 |
20110194326 | MEMORY DIES, STACKED MEMORIES, MEMORY DEVICES AND METHODS - Memory die, stacks of memory dies, memory devices and methods, such as those to construct and operate such die, stacks and/or memory devices are provided. One such memory die includes an identification configured to be selectively coupled to an external select connection node depending on how the die is arranged in a stack. The identification circuit can determine an identification of its respective memory die responsive to how, if coupled, the identification circuit is coupled to the external select connection node. | 08-11-2011 |
20110280089 | DATA BUS POWER-REDUCED SEMICONDUCTOR STORAGE APPARATUS - In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system. | 11-17-2011 |
20120230121 | DATA BUS POWER-REDUCED SEMICONDUCTOR STORAGE APPARATUS - In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system. | 09-13-2012 |
20130229847 | MEMORY DIES, STACKED MEMORIES, MEMORY DEVICES AND METHODS - Memory die, stacks of memory dies, memory devices and methods, such as those to construct and operate such die, stacks and/or memory devices are provided. One such memory die includes an identification configured to be selectively coupled to an external select connection node depending on how the die is arranged in a stack. The identification circuit can determine an identification of its respective memory die responsive to how, if coupled, the identification circuit is coupled to the external select connection node. | 09-05-2013 |
20140241022 | MEMORY DIES, STACKED MEMORIES, MEMORY DEVICES AND METHODS - Memory die, stacks of memory dies, memory devices and methods, such as those to construct and operate such die, stacks and/or memory devices are provided. One such memory die includes an identification configured to be selectively coupled to an external select connection node depending on how the die is arranged in a stack. The identification circuit can determine an identification of its respective memory die responsive to how, if coupled, the identification circuit is coupled to the external select connection node. | 08-28-2014 |
Patent application number | Description | Published |
20080222483 | Method, system, and apparatus for distributed decoding during prolonged refresh - Methods, apparatuses and systems are disclosed for preserving, verifying, and correcting data in DRAM device during a power-saving mode. In the power-saving mode, memory cells in the DRAM device may be refreshed using a self-refresh operation. This self-refresh operation may allow bit errors to occur in the DRAM device. However, by employing error correction coding (ECC), embodiments of the present invention may detect and correct these potential errors that may occur in the power-saving mode. Furthermore, a partial ECC check cycle is employed to check and correct a sub-set of the memory cells during a periodic self-refresh process that occurs during the power-saving mode. | 09-11-2008 |
20080291760 | Sub-array architecture memory devices and related systems and methods - Memory devices, systems and methods implementing an architecture for partitioning a memory area of normally used memory cells and redundant memory cells are disclosed. A memory area is partitioned into a plurality of substantially equally sized sub-arrays of normally used memory cells and redundant memory cells. The groups of memory cells in a first portion of the sub-arrays are each selectable by a first quantity of select signals and a second portion of the sub-arrays are each selectable by a second quantity of select signals. One of the plurality of sub-arrays partially includes all of the groups of the redundant memory cells selectable by respective redundant select signals. | 11-27-2008 |
20120036411 | METHOD, SYSTEM, AND APPARATUS FOR DISTRIBUTED DECODING DURING PROLONGED REFRESH - Methods, apparatuses and systems are disclosed for preserving, verifying, and correcting data in DRAM device during a power-saving mode. In the power-saving mode, memory cells in the DRAM device may be refreshed using a self-refresh operation. This self-refresh operation may allow bit errors to occur in the DRAM device. However, by employing error correction coding (ECC), embodiments of the present invention may detect and correct these potential errors that may occur in the power-saving mode. Furthermore, a partial ECC check cycle is employed to check and correct a sub-set of the memory cells during a periodic self-refresh process that occurs during the power-saving mode. | 02-09-2012 |