Patent application number | Description | Published |
20090014809 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film. | 01-15-2009 |
20090114996 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET. | 05-07-2009 |
20090212371 | SEMICONDUCTOR DEVICE FABRICATION METHOD - According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process. | 08-27-2009 |
20100055854 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal. | 03-04-2010 |
20100065918 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film. | 03-18-2010 |
20100187612 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region. | 07-29-2010 |
Patent application number | Description | Published |
20080198510 | HEAD SLIDER AND STORAGE MEDIUM DRIVE - A head slider arranged opposite to a storage medium, includes: a slider body, an insulating nonmagnetic layer laminated on a trailing edge of the slider body, and a head element embedded in the nonmagnetic film. A front edge of the head element is exposed at a top surface of the rail. A heater embedded in the nonmagnetic film near the head element, causes the head element to bulge at the top surface of the rail. A protection film is laminated on the top surface of the rail, and at least one protrusion is configured to protrude from a surface of the protection film and come close to the storage medium as compared with the top surface of the protection film when the head element bulges. The protrusion is used to determine how much to heat the film to bring the head element as close to the storage medium as possible. | 08-21-2008 |
20090015966 | MAGNETIC DISK APPARATUS - There is disclosed a magnetic disk apparatus including a magnetic disk and a magnetic head for recording data onto the magnetic disk or reading data from the magnetic disk. The magnetic disk includes a retracting part for loading the magnetic head on a surface of the magnetic disk or unloading the magnetic head from the surface of the magnetic disk. The magnetic head includes a protruding part provided at a tip part thereof. The retracting part includes an engaging part extending above the magnetic disk and having a slope part, and a driving part configured to move the engaging part in a direction orthogonal to the surface of the magnetic disk in a state where the protruding part contacts the slope part when unloading the magnetic head from the surface of the magnetic disk. | 01-15-2009 |
20090268328 | METHOD OF EXAMINING STORAGE DISK AND STORAGE DISK EXAMINING APPARATUS - A method of examining a storage disk is proposed. The method repeats steps of: executing a writing operation and a reading operation in sequence to recording tracks at first intervals so as to check a defect in the recording tracks based on the quality of a read signal; and selecting a recording track at a position spaced by a second interval larger than the first interval from a last recording track of the sequence, the recording track being a first recording track of the recording tracks at the first intervals. The method realizes detection of a defect for recording tracks at the first intervals in a concentrated manner. A recording track is then selected at a position spaced by the second interval from the sequence. A defect can reliably be detected without increasing the total number of recording tracks selected as sample tracks. | 10-29-2009 |
Patent application number | Description | Published |
20090194821 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film. | 08-06-2009 |
20120014710 | CLEANING DEVICE, IMAGE FORMING APPARATUS INCLUDING THE SAME AND CLEANING METHOD - A cleaning device includes a cleaning member that comes into contact with a developer carrier, which carries developer, in a direction crossing a moving direction of the developer carrier and cleans the developer carrier by removing the developer from the developer carrier, a recovery section that is provided with a recovery port formed inside of end portions of the developer carrier in the direction crossing the moving direction of the developer carrier and recovers the developer, which is removed by the cleaning member, through the recovery port, and a guide member that guides the developer to the recovery port, one end of the guide member being positioned outside an end portion of the cleaning member and the end portion of the developer carrier, and the other end of the guide member being positioned inside the cleaning member in the direction crossing the moving direction of the developer carrier. | 01-19-2012 |