Patent application number | Description | Published |
20090035945 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma. | 02-05-2009 |
20090273965 | Nonvolatile Memory Device - Ferromagnetic layers ( | 11-05-2009 |
20100156405 | MAGNETIC FIELD DETECTION DEVICE - A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed. | 06-24-2010 |
20100270633 | NONVOLATILE MEMORY DEVICE - Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force. | 10-28-2010 |
20110097823 | APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM - An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H | 04-28-2011 |
20120006262 | APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM - An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H | 01-12-2012 |
Patent application number | Description | Published |
20090072204 | CONDUCTIVE MATERIAL MIXED COMPOSITION - A conductive material mixed composition obtained by synthesizing a piperidyl group-containing high-molecular-weight polymer or copolymer that is composed of the constitutional unit represented by general formula (1) below and insoluble in tetrahydrofuran (THF) by polymerization in a liquid phase, immediately followed by mixing a conductive material with the polymer or copolymer in the liquid phase: | 03-19-2009 |
20130149603 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A non-aqueous electrolyte secondary battery has a negative electrode containing graphite particles as a negative electrode active material, a positive electrode containing a lithium-containing oxide of a transition metal or a lithium-containing phosphate of a transition metal as a positive electrode active material, and a non-aqueous electrolyte in which a lithium salt is dissolved in an organic solvent. The graphite particles have an exposed crystal face and are bonded with each other to be parallel to the orientation plane of each other, and the non-aqueous electrolyte contains a phosphate ester compound represented by the following general formula (1) to which an alkynyl group is bonded and/or an unsaturated phosphate ester compound represented by the following general formula (2): | 06-13-2013 |
20130177822 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - Disclosed is a non-aqueous electrolyte secondary battery using a polyanion compound or a lithium nickelate as a positive electrode active material, suppressing the elution of a transition metal from the polyanion compound or ameliorating the deterioration of a binder by a residual alkali component, and provides a non-aqueous electrolyte secondary battery having a negative electrode intercalating and deintercalating lithium ions, a positive electrode containing a lithium-containing compound as a positive electrode active material, and a non-aqueous electrolyte with a lithium salt dissolved in organic solvent. The lithium-containing compound is a polyanion compound or a lithium nickelate. The non-aqueous electrolyte contains a fluorosilane compound: | 07-11-2013 |
20130236777 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - Provided is a non-aqueous secondary battery that uses a lithium-containing metal oxide that contains manganese as a positive electrode active material, and wherein a small internal resistance and a high electric capacity can be maintained even after high-temperature storage or charge and discharge at high temperatures, by suppressing elution of manganese from the positive electrode active material. Specifically provided is a non-aqueous electrolyte secondary battery with a negative electrode capable of intercalating and deintercalating lithium ions, a positive electrode with a lithium-containing compound as the positive electrode active material, and a non-aqueous electrolyte that has lithium salt dissolved in an organic solvent. Said non-aqueous electrolyte secondary battery is characterized by the lithium-containing compound being a lithium-containing metal oxide compound that contains manganese and by the non-aqueous electrolyte containing a fluorosilane compound indicated by general formula (1). (In the formula, R | 09-12-2013 |
20130323605 | NONAQUEOUS ELECTROLYTE SOLUTION FOR BATTERIES, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAME - A nonaqueous electrolyte solution for secondary batteries, which maintains small internal resistance and high electrical capacitance in long-term use in a nonaqueous electrolyte secondary battery uses, as an active material, a crystalline carbon material having a high crystallinity, and a negative electrode produced using a polymeric carboxylic compound as a binding agent. The nonaqueous electrolyte solution contains: (A) at least one compound selected from a group consisting of an unsaturated phosphate ester compound represented by a general formula (1) and an unsaturated phosphate ester compound represented by a general formula (2); (B) at least one compound selected from a group consisting of a sulfite ester compound, a sulfonate ester compound, an alkali metal imide salt compound, a fluorosilane compound, an organic disilane compound or an organic disiloxane compound; (C) an organic solvent, and (D) an electrolyte salt. A secondary battery using such nonaqueous electrolyte solution is also described. | 12-05-2013 |
20140242456 | NONAQUEOUS ELECTROLYTE AND NONAQUEOUS SECONDARY BATTERY USING SAME - The invention provides a nonaqueous electrolyte for batteries and a nonaqueous secondary battery using the same which maintains small internal resistance and high electric capacity in high temperature storage. The nonaqueous electrolyte has an electrolyte salt, a compound of general formula (1), and a compound of general formula (2) dissolved in an organic solvent. The ratio of the compound of formula (2) to the sum of the compound of formula (1) and the compound of formula (2) is 0.1 to 8 mass %. In the formulae, R | 08-28-2014 |
20150044551 | NONAQUEOUS SECONDARY BATTERY - Disclosed is a nonaqueous secondary battery using a positive electrode containing a transition metal and lithium. The battery is prevented from deterioration due to elution of the transition metal from the positive electrode and thereby capable of maintaining small internal resistance and high electrical capacity even after high temperature storage or high-temperature charge and discharge cycles. The battery includes a negative electrode capable of intercalating and deintercalating lithium, a positive electrode containing a transition metal and lithium, and a nonaqueous electrolyte having a lithium salt dissolved in an organic solvent, the nonaqueous electrolyte containing a polycarboxylic ester compound represented by general formula (1) or (2). | 02-12-2015 |
20150206664 | ELECTRICITY STORAGE DEVICE - An electricity storage device maintains low internal resistance and high electric capacity. The nonaqueous-electrolytic-solution hybrid electricity storage device employs an anode into/from which lithium can be intercalated and deintercalated and a cathode including activated carbon, even after high-temperature storage and/or high-temperature charging/discharging. Specifically, this electricity storage device includes an anode into/from which lithium can be intercalated and deintercalated, a cathode that includes activated carbon, and a nonaqueous electrolytic solution, wherein the electricity storage device employs a nonaqueous electrolytic solution that includes at least one type of compound represented by one of general formulas (1) to (5). Details on the general formulas (1) to (5) are as described in the Description. | 07-23-2015 |
Patent application number | Description | Published |
20130264598 | Method for Producing a Semiconductor Layer Sequence, Radiation-Emitting Semiconductor Chip and Optoelectronic Component - A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed. | 10-10-2013 |
20140057417 | Method for Producing an Optoelectronic Semiconductor Chip - A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner. | 02-27-2014 |
20150044798 | Method for Producing an Optoelectronic Component - A method for producing an optoelectronic component is provided. A transfer layer, containing In | 02-12-2015 |
20150194570 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 07-09-2015 |