Patent application number | Description | Published |
20080237695 | SEMICONDUCTOR MEMORY DEVICE - This disclosure concerns a memory comprising a charge trapping film; a gate insulating film; a back gate on the charge trapping film; a front gate on the gate insulating film; and a body region provided between a drain and a source, wherein the memory includes a first storage state for storing data depending on the number of majority carriers in the body region and a second storage state for storing data depending on the amount of charges in the charge trapping film, and the memory is shifted from the first storage state to the second storage state by converting the number of majority carriers in the body region into the amount of charges in the charge trapping film or from the second storage state to the first storage state by converting the amount of charges in the charge trapping film into the number of majority carriers in the body region. | 10-02-2008 |
20080239789 | SEMICONDUCTOR MEMORY DEVICE - The disclosure concerns a semiconductor memory device comprising a semiconductor layer; a charge trap film in contact with a first surface of the semiconductor layer; a gate insulating film in contact with a second surface of the semiconductor layer, the second surface being opposite to the first surface; a back gate electrode in contact with the charge trap film; a gate electrode in contact with the gate insulating film; a source and a drain formed in the semiconductor layer; and a body region provided between the drain and the source, the body region being in an electrically floating state, wherein a threshold voltage or a drain current of a memory cell including the source, the drain, and the gate electrode is adjusted by changing number of majority carriers accumulated in the body region and a quantity of charges trapped into the charge trap film. | 10-02-2008 |
20080242048 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. | 10-02-2008 |
20080305588 | Nand-type semiconductor storage device and method for manufacturing same - According to this invention, there is provided a NAND-type semiconductor storage device including a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate, a buried insulating film selectively formed between the semiconductor substrate and the semiconductor layer in a memory transistor formation region, diffusion layers formed on the semiconductor layer in the memory transistor formation region, floating body regions between the diffusion layers, a first insulating film formed on each of the floating body regions, a floating gate electrode formed on the first insulating film, a control electrode on a second insulating film formed on the floating gate electrode, and contact plugs connected to ones of the pairs of diffusion layers which are respectively located at ends of the memory transistor formation region, wherein the ones of the pairs of diffusion layers, which are located at the ends of the memory transistor formation region, are connected to the semiconductor substrate below the contact plugs. | 12-11-2008 |
20090114989 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - This disclosure concerns a semiconductor memory device including a semiconductor substrate; a buried insulation film provided on the semiconductor substrate; a semiconductor layer provided on the buried insulation film; a source layer and a drain layer provided in the semiconductor layer; a body region provided in the semiconductor layer between the source layer and the drain layer, and being in an electrically floating state, the body region accumulating or discharging charges to store data; a gate dielectric film provided on the body region; a gate electrode provided on the gate dielectric film; and a plate electrode facing a side surface of the body region via an insulation film, in an element isolation region. | 05-07-2009 |
20090152610 | SEMICONDUCTOR MEMORY DEVICE - This disclosure concerns a semiconductor memory device including bit lines; word lines; semiconductor layers arranged to correspond to crosspoints of the bit lines and the word lines; bit line contacts connecting between a first surface region and the bit lines, the first surface region being a part of a surface region of the semiconductor layers directed to the word lines and the bit lines; and a word-line insulating film formed on a second surface region adjacent to the first surface region, the second surface region being a part of out of the surface region, the word-line insulating film electrically insulating the semiconductor layer and the word line, wherein the semiconductor layer, the word line and the word-line insulating film form a capacitor, and when a potential difference is given between the word line and the bit line, the word-line insulating film is broken in order to store data. | 06-18-2009 |
20090203187 | Method of Manufacturing SOI Substrate - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. | 08-13-2009 |
20100019304 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes bodies electrically floating; sources; drains; gate electrodes, each of which is adjacent to one side surface of the one of the bodies via a gate dielectric film; plates, each of which is adjacent to the other side surface of the one of the bodies via a plate dielectric film; first bit lines on the drains, the first bit lines including a semiconductor with a same conductivity type as that of the drains; and emitters on the semiconductor of the first bit lines, the emitters including a semiconductor with an opposite conductivity type to that of the semiconductor of the first bit lines, wherein the emitters are stacked above the bodies and the drains. | 01-28-2010 |
20100181622 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device of one embodiment of the present invention includes a substrate; isolation layers, each of which is formed in a trench formed on the substrate and has an insulating film and a conductive layer; a semiconductor layer of a first conductivity type for storing signal charges, formed between the isolation layers and isolated from the conductive layers by the insulating films; a semiconductor layer of a second conductivity type, formed under the semiconductor layer of the first conductivity type; and a transistor having a gate insulator film formed on the semiconductor layer of the first conductivity type and a gate electrode formed on the gate insulator film. | 07-22-2010 |
20100190304 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor storage device, has a first conductive type semiconductor region formed on a semiconductor substrate, a plurality of second conductive type semiconductor regions formed separately from each other on the first conductive type semiconductor region, a plurality of MOSFETs each formed on the plurality of second conductive type semiconductor regions, and element isolating regions each formed between the adjacent second conductive type semiconductor regions, a bottom surface of which being located in the first conductive type semiconductor region, wherein the number of crystal defects per unit volume in the first conductive type semiconductor region is larger than the number of the crystal defects per unit volume in the second conductive type semiconductor regions. | 07-29-2010 |