Patent application number | Description | Published |
20120081559 | IMAGE-SHAKE CORRECTION DEVICE, LENS BARREL, AND OPTICAL APPARATUS - A yoke of an actuator for driving a shift moving frame in a pitch direction is shaped such that when the shift moving frame is moved in the pitch direction, a magnetic attractive force for reducing a moment acting on the shift moving frame due to a magnetic attractive force generated between the magnet and the yoke of an actuator for driving the shift moving frame in a yaw direction is generated between the yoke and the magnet of the actuator for driving in the pitch direction. | 04-05-2012 |
20120120492 | IMAGE STABILIZING APPARATUS THAT CORRECTS IMAGE BLUR CAUSED BY HAND SHAKE, LENS BARREL, AND OPTICAL APPARATUS - An image stabilizing apparatus includes a fixed member, a shift member that holds an image stabilizing lens and are movable in a plane orthogonal to an optical axis, a plurality of shift drivers that are disposed at positions different from each other in the plane orthogonal to the optical axis, a gel that is held by one of the shift member and the fixed member, and a protrusion that is provided on the other one of the shift member and the fixed member. Each of the plurality of shift drivers includes a magnet held by one of the shift member and the fixed member, a coil that is held by the other one of the shift member and the fixed member, and a yoke that is held by the other one of the shift member and the fixed member, and a portion of the protrusion is immersed in the gel. | 05-17-2012 |
20140293462 | RACK AND OPTICAL APPARATUS USING THE SAME - The rack includes a first member having a first tooth engaged with a lead screw, a second member having a second tooth engaged with the lead screw, a third member having a third tooth engageable with the lead screw, a first forcing unit configured to apply a force between the first and second members, a second forcing unit configured to apply a force between the first member and third members, and a limiter configured to limit a distance between the third tooth and the lead screw so that the third tooth is separated from the lead screw when the first and second teeth are engaged with the lead screw by the force applied by the first forcing unit and a distance between the first tooth and the third tooth is smaller than an outer diameter of the lead screw. | 10-02-2014 |
Patent application number | Description | Published |
20120097239 | METHOD FOR ROUGHENING SUBSTRATE SURFACE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE - To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities. | 04-26-2012 |
20150007867 | PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion device includes an n-type semiconductor layer and a p-type semiconductor layer, a collecting electrode formed on the n-type semiconductor layer, and a collecting electrode formed on the p-type semiconductor layer, on a back surface opposite to a light receiving surface of an n-type crystalline silicon substrate, and an n-type semiconductor region on a surface on a light receiving surface side of the n-type crystalline silicon substrate, wherein in the n-type semiconductor region, an n-type semiconductor region that is opposed to the n-type semiconductor layer with the n-type crystalline silicon substrate therebetween and an n-type semiconductor region that is opposed to the p-type semiconductor layer with the n-type crystalline silicon substrate therebetween have different average impurity concentrations. | 01-08-2015 |