Takayuki Nakada
Takayuki Nakada, Osaka JP
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20100025505 | ELECTROSTATIC ATOMIZER - Disclosed is an electrostatic atomizer, which comprises a high-voltage applying section adapted to apply a high voltage between an atomizing electrode and a counter electrode so as to electrostatically atomize water supplied onto the atomizing electrode, wherein the high-voltage applying section is operable to set an absolute value of a voltage to be applied to the atomizing electrode smaller than an absolute value of a voltage to be applied to the counter electrode. This allows a physical object, such as an article stored in a mist-receiving space or an inner wall of a structural member defining the mist-receiving space to become less likely to be electrostatically charged, and makes it possible to avoid causing a problem about discomfort due to discharge of static charges when a user touches the physical object. | 02-04-2010 |
20110024529 | Electrostatic atomizer - An electrostatic atomizer includes a discharge electrode, an opposite electrode positioned in front of the discharge electrode in a spaced-apart relationship therewith, a housing for defining an atomization chamber between the discharge electrode and the opposite electrode, a water supply unit for supplying water for atomization to the discharge electrode, and a voltage application unit for applying a voltage to the discharge electrode. The housing is provided with an air vent window through which the atomization chamber is opened laterally outwards. The opposite electrode is provided with a soundproof shield portion extended therefrom to cover, when seen from a front side of the opposite electrode, the space existing laterally outwards of the air vent window of the housing. The soundproof shield portion reflects rearwards a discharge sound generated in the atomization chamber. | 02-03-2011 |
Takayuki Nakada, Toyama-Shi JP
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20090197409 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube. | 08-06-2009 |
20100050945 | SUBSTRATE PROCESSING APPARATUS - When a quartz part is placed on a floor, the inside of a furnace is not polluted by contaminants attached from the floor to a seal surface of the quartz part and entering the inside of the furnace. A substrate processing apparatus includes a reaction tube, a first joining surface, a second joining surface, and a third joining surface. The reaction tube includes a quartz inner tube and a quartz outer tube. The first joining surface is configured to air-tightly join the outer tube and a quartz manifold. The second joining surface is configured to air-tightly join the manifold and a quartz seal cover. The third joining surface is configured to air-tightly join the seal cover and a seal cap. An O-ring is installed at least one of the first, second, and third joining surfaces, and a protrusion is installed outside the O-ring installed at the jointing surface. | 03-04-2010 |
20100051597 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material. | 03-04-2010 |
20120083120 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber in which a substrate is processed, a substrate holder configured to be loaded into and unloaded from the processing chamber while holding the substrate, a transfer chamber in which a charging operation for causing the substrate holder to hold an unprocessed substrate and a discharging operation for taking out a processed substrate from the substrate holder are performed, and a cleaning unit configured to blow clean air into the transfer chamber. The transfer chamber has a polygonal plan-view shape and includes corner areas. The cleaning unit is arranged in one of the corner areas of the transfer chamber. | 04-05-2012 |
Takayuki Nakada, Toyamashi JP
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20100055918 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts. | 03-04-2010 |
Takayuki Nakada, Hikone JP
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20100044475 | ELECTROSTATIC ATOMIZER - Disclosed is an electrostatic atomizer, which comprises a cooler adapted to cool an atomizing electrode so as to allow moisture in air to be frozen onto the atomizing electrode, a melter adapted to melt ice frozen on the atomizing electrode so as to supply water onto the atomizing electrode, a high-voltage applying section adapted to apply a high voltage to the atomizing electrode, and a control section adapted to activate the high-voltage applying section in a state after supplying water onto the atomizing electrode by melting the ice frozen thereon, so as to apply a high voltage to the atomizing electrode to electrostatically atomize the water supplied on the atomizing electrode. The electrostatic atomizer of the present invention can reliably supply water onto the atomizing electrode and electrostatically atomize the water, without restrictions due to temperature/humidity conditions in a mist-receiving space targeted for implementation of electrostatic atomization therewithin, even if the mist-receiving space has a low temperature and/or a low humidity. | 02-25-2010 |
20110163176 | ELECTROSTATIC ATOMIZATION DEVICE AND HYDROPHILIC TREATMENT DEVICE INCLUDING THE SAME - An electrostatic atomization device (A) for increasing hydrophilicity of collected matter ( | 07-07-2011 |
20120006915 | ELECTROSTATIC ATOMIZATION APPARATUS - An electrostatic atomization apparatus ( | 01-12-2012 |
Takayuki Nakada, Toyoma-Shi JP
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20100024728 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a process chamber configured to accommodate a substrate; a gas supply line configured to supply gas into the process chamber; and an exhaust line configured to exhaust the inside of the process chamber. In the substrate processing apparatus, the gas supply line comprises: a preheating unit configured to preheat the gas before supplying the gas into the process chamber; a metal pipeline configured to supply the preheated gas into the process chamber; and a heat dissipation member covering the outer periphery of a bend section formed in the metal pipeline. | 02-04-2010 |
Takayuki Nakada, Aichi JP
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20090047878 | Shot-blasting Machine - A loader arrangement | 02-19-2009 |
Takayuki Nakada, Toyama JP
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20110286819 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a reactor; at least two boat conveying devices configured to convey at least two boats; at least one boat support table configured to support the at least two boats, the boat support table being movable to a position below the reactor; and a control unit configured to control the boat conveying devices such that when a first boat of the at least two boats supported by a first boat conveying device of the plurality of boat conveying devices holds a processed substrate processed by the reactor and is moved back to a position spaced apart from the reactor, a second boat of the at least two boats holding an unprocessed substrate is loaded into the reactor using a second boat conveying device of the at least two boat conveying devices. | 11-24-2011 |
Takayuki Nakada, Shiga-Ken JP
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20120160940 | ELECTROSTATIC ATOMIZATION DEVICE - An electrostatic atomization device that prevents the cooling capability from being lowered due to contact of an atomization electrode with another ember, while effectively preventing surplus production of condensed water that would destabilize discharging at the distal end of the atomization electrode. the electrostatic atomization device includes an atomization electrode having a cylindrical electrode body and a base which is informed at a basal end of the electrode body and has a larger diameter than the electrode from the base to produce condensed water on the atomization electrode. Voltage is applied to the atomization electrode when the condensed water is produced to generate charged fine water droplets. A partition plate includes an insertion hole that receives the electrode body of the atomization electrode. The partition plate and the base of the atomization electrode form a water collection region in between. | 06-28-2012 |
20120175439 | ELECTROSTATIC ATOMIZATION DEVICE - An electrostatic atomization device having a simple structure and allowing for reduction in size. The electrostatic atomization device has an atomization electrode including a P type Peltier element and an N type Peltier element joined with the P type Peltier element. The atomization electrode is cuspate so as to form a projection with a joined portion of the P type Peltier element and the N type Peltier element. High voltage is applied to the P and N type Peltier elements so that discharging occurs at a distal portion of the atomization electrode, current flows to the P and N type Peltier elements to produce a cooling effect at the joined portion, and condensed water generated by the cooling effect is atomized by the discharging to generate charged fine water droplets. | 07-12-2012 |
Takayuki Nakada, Shiga JP
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20130146683 | ELECTROSTATIC ATOMIZING DEVICE - The atomizing electrode of the electrostatic atomizing device has a discharging part and a base. A portion of the atomizing electrode between the discharging part and the base is a large diameter part with a diameter larger than the base. The large diameter part separates condensed water retained near the base from condensed water retained on the discharging part. | 06-13-2013 |
20130153690 | ELECTROSTATIC ATOMIZATION DEVICE - An electrostatic atomization device comprises: an electric discharge electrode having a front end section and a base end section; a cooling section for cooling the electric discharge electrode; a high-voltage application section for generating electrically charged water particles by atomizing condensed water, which is held by the electric discharge electrode, by causing the front end section of the electric discharge electrode to discharge electricity; and a heat capacity adjustment member provided to the vicinity of the base end section of the electric discharge electrode and capable of heat transfer with the electric discharge electrode through the condensed water held by the electric discharge electrode. | 06-20-2013 |
20130155567 | DISCHARGE ELECTRODE, METHOD FOR MANUFACTURING DISCHARGE ELECTRODE, ION GENERATING APPARATUS, AND ELECTROSTATIC ATOMIZING APPARATUS - A discharge electrode includes a surface layer to which a surface treatment that enables solder bonding is applied. | 06-20-2013 |