Patent application number | Description | Published |
20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
20080225550 | Light supply unit, illumination unit, and illumination system - A light supply unit comprises optical fibers, LEDs, optical connectors, and a controller. The optical fibers constitute optical fiber groups which extend to their respective illumination positions different from each other. The optical connectors optically connect one ends of the optical fibers to the respective LEDs. The controller controls light emissions of the respective LEDs. | 09-18-2008 |
20100209622 | Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride - Flat, thin AlN membranes and methods of their manufacture are made available. | 08-19-2010 |
20100314625 | GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture - Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass | 12-16-2010 |
20100319614 | Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method - A compound semiconductor single-crystal manufacturing device ( | 12-23-2010 |
20110076453 | AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body - Affords an Al | 03-31-2011 |
20120164058 | METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER - There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal | 06-28-2012 |
20130008370 | METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL - Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal. | 01-10-2013 |
20130312878 | CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME - An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10 | 11-28-2013 |
20130341633 | Semiconductor Device - Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S | 12-26-2013 |
20140357067 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 12-04-2014 |