Patent application number | Description | Published |
20120074102 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Phosphoric acid, sulfuric acid, and water are supplied to a flow path for a processing liquid from a first tank to a substrate held by a substrate holding unit. As a result, a mixed liquid containing the phosphoric acid, the sulfuric acid, and the water is generated. A liquid containing the sulfuric acid and a liquid containing the water are mixed together in the flow path, and the temperature of the mixed liquid containing the phosphoric acid, the sulfuric acid, and the water rises. A mixed liquid containing a phosphoric acid aqueous solution whose temperature is close to its boiling point is supplied to the substrate held by the substrate holding unit. | 03-29-2012 |
20130161287 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step. | 06-27-2013 |
20130175241 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate. | 07-11-2013 |
20130256267 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component. | 10-03-2013 |
20150020967 | SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a water removing unit for removing water from a substrate, a silylating agent supplying unit for supplying a silylating agent to the substrate and an etching agent supplying unit for supplying an etching agent to the substrate. A control unit controls the said units to execute a water removing step, a silylating step and an etching step in that order. | 01-22-2015 |
20150162224 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment method for treating a substrate including a first silicon nitride film provided on a front surface thereof and a silicon oxide film provided on the first silicon nitride film to remove the first silicon nitride film and the silicon oxide film from the substrate includes: a first phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a predetermined first concentration to the substrate held by a substrate holding unit to treat the substrate with the first concentration phosphoric acid aqueous solution for the removal of the first silicon nitride film; and a second phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a second concentration lower than the first concentration to the substrate to treat the substrate with the second concentration phosphoric acid aqueous solution for the removal of the silicon oxide film after the first phosphoric acid treatment step. | 06-11-2015 |
20150258582 | SUBSTRATE PROCESSING DEVICE - A substrate processing apparatus includes a substrate holding unit that holds a substrate in a horizontal position, a processing liquid supplying unit that supplies the processing liquid to the surface of the substrate held by the substrate holding unit, a substrate rotating unit that rotates the substrate held by the substrate holding unit, a heater that opposes the substrate held by the substrate holding unit, a heater supporting member that supports the heater independently of the substrate holding unit and a moving unit that moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate held by substrate holding unit approach/leave each other. | 09-17-2015 |
20160049308 | SUBSTRATE PROCESSING METHOD - A substrate processing method includes a phosphoric acid processing step of supplying a phosphoric acid aqueous solution, which contains silicon and has a silicon concentration lower than a saturation concentration, to a front surface of a substrate, a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step, and a rinse replacing step of supplying a rinse liquid having a temperature lower than that of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step to the front surface of the substrate covered with the phosphoric acid aqueous solution at least partially, after the liquid volume reducing step. | 02-18-2016 |