Patent application number | Description | Published |
20080218000 | Power-Off System and Method - There is provided a power-off system including a connector ( | 09-11-2008 |
20080243391 | Information Managing/Providing System and Method - There is provided n information managing/providing system including a plurality of clients ( | 10-02-2008 |
20080317154 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE - The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state. | 12-25-2008 |
20090104881 | Switching element, antenna switch circuit and radio frequency module using the same - A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes | 04-23-2009 |
20100069020 | SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg | 03-18-2010 |
20100117713 | SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME - The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch. | 05-13-2010 |
20100297960 | Switching element, antenna switch circuit and radio frequency module using the same - A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes | 11-25-2010 |
20100317747 | Medium oil used for a synthesis reaction, process for preparing dimethyl ether and process for preparing a mixture of dimethyl ether and methanol - A medium oil to be used for a synthesis reaction in a slurry-bed reaction procedure. The medium oil has as a main component, a branched, saturated aliphatic hydrocarbon having 16 to 50 carbon atoms, 1 to 7 tertiary carbon atoms, 0 quaternary carbon atoms, and 1 to 16 carbon atoms in the branched chains bonded to the tertiary carbon atoms; and at least one of the tertiary carbon atoms is bonded to hydrocarbon chains with a chain length having 4 or more carbon atoms in three directions. | 12-16-2010 |
20110034137 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE - The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state. | 02-10-2011 |
20110156983 | Switching element, antenna switch circuit and radio frequency module using the same - A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes | 06-30-2011 |
20110221519 | SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE USING THE SAME - The present invention reduces harmonic components of an RF transmission output signal. In the semiconductor integrated circuit which the present invention provides, a transmission switch of an antenna switch thereof includes transmission field effect transistors whose S-D current paths are coupled between a transmission terminal and an input/output terminal and whose gate terminals are coupled to a transmission control terminal. A reception switch of the antenna switch includes reception field effect transistors whose S-D current paths are coupled between the input/output terminal and a reception terminal and whose gate terminals are coupled to a reception control terminal. The transmission and reception n-channel MOS field effect transistors are respectively formed in a silicon-on-insulator structure. A substrate voltage of a voltage generator, set to reducing each harmonic component of the antenna switch, is supplied to the transmission control terminal and the reception coupled to a support silicon substrate having the SOI structure. | 09-15-2011 |
20120200335 | SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg | 08-09-2012 |
20120229192 | SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME - A semiconductor integrated circuit which reduces an increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch. | 09-13-2012 |
20130069708 | SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg | 03-21-2013 |
20140184122 | CONSTRUCTION MACHINE - A construction machine includes: a swing structure ( | 07-03-2014 |