Patent application number | Description | Published |
20090021546 | INKJET PRINTING APPARATUS AND PRINTHEAD DRIVING METHOD - An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval. | 01-22-2009 |
20090256887 | LIQUID DISCHARGE METHOD AND LIQUID DISCHARGE HEAD - A liquid discharge method allowing a liquid inside a flow path to be heated by a heat generating element ( | 10-15-2009 |
20100253726 | INKJET PRINTING APPARATUS AND PRINTHEAD DRIVING METHOD - An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval. | 10-07-2010 |
20100315456 | PRINTING APPARATUS AND PRINTING METHOD - In an ink jet printing apparatus for scanning a print medium with a printing head and printing an image thereon, the printing head includes a plurality of ink ejection port arrays. The ink ejection ports in each of the arrays are arranged in a direction crossing a scanning direction of the printing head relative to the print medium. An allowable recording rate given to at least one of the ejection port arrays behind an ejection port array located at the front in the scanning direction is set lower than that given to the one located at the front. As a result, a printing apparatus capable of suppressing a throughput speed thereof and adhesion of ink mists to a formation face of the ejection ports can be provided. | 12-16-2010 |
20140209980 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a buffer layer made of a nitride semiconductor, forming a channel layer made of a nitride semiconductor over the buffer layer, forming a barrier layer made of a nitride semiconductor over the channel layer, forming a cap layer made of a nitride semiconductor over the barrier layer, forming a gate insulating film so as to in contact with the cap layer; and forming a gate electrode over the gate insulating film, wherein compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer by controlling compositions of the cap layer, the barrier layer, the channel layer, and the buffer layer. | 07-31-2014 |
20140239311 | SEMICONDUCTOR DEVICE - A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel layer, and a gate electrode disposed inside the trench via a gate insulating film. The channel layer contains n-type impurities, and a region of the channel layer positioned on a buffer layer side has an n-type impurity concentration larger than a region of the channel layer positioned on a barrier layer side, and the buffer layer is made of nitride semiconductor having a band gap wider than that of the channel layer. The channel layer is made of GaN and the buffer layer is made of AlGaN. The channel layer has a channel lower layer containing n-type impurities at an intermediate concentration and a main channel layer formed thereon and containing n-type impurities at a low concentration. | 08-28-2014 |
20140264274 | SEMICONDUCTOR DEVICE - To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap. | 09-18-2014 |
20140353720 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode. | 12-04-2014 |
20150041821 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN | 02-12-2015 |
20150048419 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a channel layer formed above a substrate, a barrier layer formed over the channel layer and having a band gap larger than that of the channel layer, a trench passing through the barrier layer as far as a midway of the channel layer, and a gate electrode disposed byway of a gate insulation film in the inside of the trench. Then, the end of the bottom of the trench is in a rounded shape and the gate insulation film in contact with the end of the bottom of the trench is in a rounded shape. By providing the end of the bottom of the trench with a roundness as described above, a thickness of the gate insulation film situated between the end of the bottom of the gate electrode and the end of the bottom of the trench can be decreased. Thus, the channel is formed also at the end of the bottom of the trench to reduce the resistance of the channel. | 02-19-2015 |