Takao Noda
Takao Noda, Kanagawa-Ken JP
Patent application number | Description | Published |
---|---|---|
20080277692 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 11-13-2008 |
20090200576 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 08-13-2009 |
20100314666 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode. | 12-16-2010 |
20110309413 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 12-22-2011 |
20130153966 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 06-20-2013 |
Takao Noda, Himeji-Shi JP
Patent application number | Description | Published |
---|---|---|
20120241762 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface. | 09-27-2012 |
Takao Noda, Hyogo-Ken JP
Patent application number | Description | Published |
---|---|---|
20140283618 | SEMICONDUCTOR DEVICE AND STRAIN MONITOR - According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor. | 09-25-2014 |
Takao Noda, Hyogo JP
Patent application number | Description | Published |
---|---|---|
20150035111 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode. | 02-05-2015 |
Takao Noda, Himeji Hyogo JP
Patent application number | Description | Published |
---|---|---|
20150262889 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device, including: detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed. | 09-17-2015 |
20150263158 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes first electrode, second electrode, and third electrodes, first, second, third, fourth, and fifth semiconductor regions. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the second electrode. The third semiconductor region is provided between the second semiconductor region and the second electrode. The third semiconductor region has an impurity concentration higher than an impurity concentration of the first semiconductor region. The third electrode contacts the third, second, and first semiconductor regions via an insulating film. The fourth semiconductor region is provided between the first semiconductor region and the second electrode. The fifth semiconductor region is provided between the fourth semiconductor region and the second electrode. The fifth semiconductor region has an impurity concentration higher than the impurity concentration of the first semiconductor region. | 09-17-2015 |