Patent application number | Description | Published |
20090072329 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device includes a field effect transistor comprising a gate insulating film having the film thickness of 1 nm or more, wherein at least an area of the gate insulating film which extending up to 1 nm from the side of the semiconductor layer in the thickness direction thereof comprises a silicon oxynitride film (SiON), the atom number ratio (O/Si) of oxygen to silicon in the area is 0.01 to 0.30, and the atom number ratio (N/Si) of nitrogen to silicon in the area is 0.05 to 0.30. | 03-19-2009 |
20090141429 | CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A capacitor electrode includes a first surface and a second surface which are arranged opposite each other. The capacitor electrode contains an oxygen atom and a nitrogen atom. The capacitor electrode includes a position A where the oxygen atom exhibits a largest concentration value, between the first surface and the second surface in a thickness direction. The nitrogen atom is present only in an area closer to the first surface than the position A. | 06-04-2009 |
20110014797 | METHOD FOR Sr-Ti-O-BASED FILM FORMATION AND STORAGE MEDIUM - A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O | 01-20-2011 |
20110052810 | FILM FORMING METHOD AND STORAGE MEDIUM - An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O | 03-03-2011 |
20120064689 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode. | 03-15-2012 |
20120064690 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode made of titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide, in which at least the uppermost layer of the dielectric film is formed by an atomic layer deposition (ALD) method on the lower electrode, forming a first protective film on the dielectric film without exceeding the film forming temperature of the ALD method over 70° C., and forming an upper electrode made of a titanium nitride on the first protective film. | 03-15-2012 |
20120115300 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode. | 05-10-2012 |
20120244721 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM - A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure. | 09-27-2012 |
20130045582 | CAPACITOR INSULATING FILM, METHOD OF FORMING THE SAME, CAPACITOR AND SEMICONDUCTOR DEVICE USING THE CAPACITOR INSULATING FILM - A capacitor insulating film may include, but is not limited to, strontium, titanium, and oxygen. The capacitor insulating film has a ratio of a spectrum intensity of ( | 02-21-2013 |
20130119514 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode. | 05-16-2013 |