Patent application number | Description | Published |
20110212599 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port. | 09-01-2011 |
20120156886 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates | 06-21-2012 |
20120220107 | SUBSTRATE PROCESSING APPARATUS, WAFER HOLDER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base ( | 08-30-2012 |
20120220108 | SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE - When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates. | 08-30-2012 |
20120315767 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber. | 12-13-2012 |
20130330930 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle. | 12-12-2013 |
20150093916 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber. | 04-02-2015 |
20150184288 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus and Non-Transitory Computer Readable Recording Medium - Provided are a method of manufacturing semiconductor device, a substrate processing apparatus and a recording medium which are capable of efficiently removing a deposited film in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes (a) forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and (b) removing a deposited film deposited in the shower head in (a) by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in (a), into the shower head without the substrate loaded in the processing chamber. | 07-02-2015 |