Taek Seung
Taek Seung Kim, Cheongiu-Si KR
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20080315913 | Apparatus for measuring on-die termination (ODT) resistance and semiconductor memory device having the same - An apparatus for measuring an on-die termination (ODT) resistance includes an ODT controller and a driver. The ODT controller receives a plurality of decoding signals, a first test mode signal, and a second test mode signal to generate a plurality of pull-up signals and a plurality of pull-down signals. The pull-up signals are enabled in response to the decoding signals and the first test mode signal, and the pull-down signals are enabled in response to the decoding signals and the second test mode signal. The driver receives the pull-up signals and the pull-down signals to drive a data terminal. At least one of the decoding signals is enabled by a mode register set (MRS) for setting an ODT mode. | 12-25-2008 |
20090052263 | Write driving circuit - A write driving circuit is provided to drive a global input/output line to write same data to memory cells according to a combination of a first test data signal and a second test data signal in a test mode, regardless of input data signals. | 02-26-2009 |
Taek Seung Lee, Chungcheongnam-Do KR
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20140277300 | Method for Determining Body Type for Thermotherapy Device - Disclosed herein a method of determining the type of human body in a thermo-therapeutic apparatus. In the method of determining the type of human body in a thermo-therapeutic apparatus, a control unit scans the entire spine of a user by moving a moxibustion device using a horizontal motor, measures the operating current of the horizontal motor, calculates the length of the spine of the human body based on the measured operating current, and precisely determines the positions of the cervical vertebrae, the thoracic vertebrae, the lumbar vertebrae, and the coccyx that form the spine. As a result, acupuncture points suitable for a specific person are calculated and then the calculated acupuncture points are enabled to be used to administer thermotherapy. | 09-18-2014 |
20140371638 | Method for Setting Massage Pattern of Thermotherapy Device - The present invention relates to a method for setting a massage pattern of a thermotherapy device, and more specifically, to a method for setting a massage pattern, wherein the movement of a moxibustion device is patterned according to diseases so as to allow a bone of the spine associated with a disease to be intensively massaged, and thus if a disease is selected, a moxibustion device is operated by a motor according to the set massage pattern so as to enable an automatic customized massage according to the disease. | 12-18-2014 |
Taek Seung Yang, Seoul KR
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20090160022 | METHOD OF FABRICATING MIM STRUCTURE CAPACITOR - The present invention relates to a method of fabricating a MIM structure capacitor. The method includes sequentially depositing a nitride film, a Ti film, and a TiN film over a lower electrode metal layer, the nitride film being an insulating layer, and a combination of the Ti/TiN layers being a upper metal electrode, for the MIM structure capacitor. The method further includes coating a photoresist layer on the upper electrode metal layer and patterning the photoresist layer, then selectively etching the upper metal electrode layer, and the nitride film by using the patterned photoresist layer as an etch mask, and finally removing nitride remaining on sidewalls of the MIM structure capacitor through a wet cleaning process. | 06-25-2009 |
Taek Seung Yang, Gyeonggi-Do KR
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20100052084 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed are an image sensor employing an annealing process and a manufacturing method thereof. According to the method, in one embodiment, a transistor structure is formed over a semiconductor substrate, a metal interconnection layer is formed over the transistor structure, a protective layer is formed over the metal interconnection layer, a nitride layer is formed over the protective layer, and the semiconductor substrate formed with the nitride layer is subject to a high pressure annealing process. | 03-04-2010 |
20100136734 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are methods of manufacturing a semiconductor device. The method of manufacturing one semiconductor device includes forming a transistor structure on a semiconductor substrate, forming a metal interconnection layer on the transistor structure, forming a protective layer on the metal interconnection layer, and implanting hydrogen ions into the semiconductor substrate having the protective layer by using a hydrogen ion implanter. Hydrogen ions are stably and effectively implanted into a selected region by using a hydrogen ion implanter in the manufacturing process of the semiconductor device, thereby facilitating the manufacturing process and improving the performance of the semiconductor device. | 06-03-2010 |
Taek-Seung Kim, Gyeonggi-Do KR
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20100220519 | Sensing Characteristic Evaluating Apparatus for Semiconductor Device and Method Thereof - A sensing characteristic evaluating apparatus for a semiconductor device includes a test current supply unit configured to supply a test current to an input/output line during a test mode for evaluating a sensing characteristic, and a sensing amplifying circuit configured to receive the test current from the input/output line, to compare and amplify a sensing input voltage corresponding to the test current with a reference voltage, and to output an amplified voltage as a sensing output voltage. | 09-02-2010 |
Taek-Seung Kim, Seoul KR
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20150038608 | MANUFACTURING METHOD OF POROUS POLYMER FILM USING VANADIUM OXIDE NANOWIRE, AND POROUS POLYMER FILM PREPARED THEREFROM - This patent is provided a method for producing a porous polymer film using vanadium oxide nanowires, and a porous polymer film obtained from the method. The method allows control of a uniform pore size and density through a simple process including the steps of: adding an ion exchanger to deionized water to perform acidification and adding a vanadate compound thereto to grow vanadium oxide nanowires by a sol-gel process; mixing the resultant solution of grown nanowires with a polymer solution to provide a mixed solution of nanowires; pouring the mixed solution of nanowires to a mold, followed by drying and curing, to form a film; and etching the resultant film with an etching solution to remove the vanadium oxide nanowires. | 02-05-2015 |
Taek-Seung Yang, Yeoju-Gun KR
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20090168297 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a method may include forming a multilayer dielectric film on and/or over a lower metal line and forming an upper metal layer on and/or over the multilayer dielectric film. A semiconductor device fabricated by the method may include a lower metal line, a multilayer dielectric film including a plurality of layers laminated in this order on and/or over the lower metal line, and an upper metal layer arranged on and/or over the multilayer dielectric film. Accordingly, a semiconductor device may achieve a high-capacitance (i.e. not less than 6 fF/um | 07-02-2009 |
20090296314 | CAPACITOR OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Embodiments relate to a capacitor in a semiconductor device having high capacitance and a manufacturing method thereof. The capacitor includes a bottom electrode over a substrate, a dielectric layer stacked over the bottom electrode and including a first dielectric layer having a thickness of about 30 ű2 Å, a second dielectric layer having a thickness of about 100 ű5 Å, and a third dielectric layer having a thickness of about 30 ű2 Å, and a top electrode over the dielectric layer. Since dielectric layers having great band gaps are deposited over and under the top and bottom of the dielectric layer having a small band gap, the electric stability and leakage current characteristic are improved. The capacitor may have a high capacitance of 8 fF or above, and may be used for semiconductor devices, for example in development of high technology DRAM and CMOS devices. | 12-03-2009 |
20090305478 | METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE - A method for manufacturing a capacitor of a semiconductor device includes forming a lower metal layer over a substrate, forming a dielectric layer over the lower metal layer, forming an upper metal layer over the dielectric layer, forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer, and performing a chemical down-stream etch (CDE) process to remove a by-product of a sidewall of the upper electrode. | 12-10-2009 |