Tadashi Iijima
Tadashi Iijima, Oita JP
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20100052162 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device, includes a semiconductor substrate; and a solder bump part, which is formed on the semiconductor substrate and in which no grain boundary extends equal to or over ⅓ of a diameter dimension of said solder bump part from an outer circumferential surface between an end of a connection part with the semiconductor substrate and a lateral portion. | 03-04-2010 |
20110024901 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a manufacturing method of a semiconductor device attained as follows. A dielectric layer having a first opening and a second opening reaching an electrode terminal is formed by modifying a photosensitive resin film on a substrate on which the electrode terminal of a first conductive layer is provided. Next, a second conductive layer that is electrically connected to the electrode terminal is formed on the dielectric layer that includes inside of the first opening, and a third conductive layer that has an oxidation-reduction potential of which difference from the oxidation-reduction potential of the first conductive layer is smaller than a difference of the oxidation-reduction potential between the first conductive layer and the second conductive layer is formed on the second conductive layer. Next, a dielectric layer having a third opening reaching the third conductive layer and a fourth opening reaching the electrode terminal via the second opening is formed by modifying a photosensitive resin film, and a bump that is electrically connected to the third conductive layer is formed. | 02-03-2011 |
Tadashi Iijima, Ibaraki JP
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20090020106 | EXHAUST GAS RECIRCULATION SYSTEM - An exhaust gas recirculation system having an exhaust line connected to an exhaust manifold of an engine; an intake line connected to an intake manifold of the engine; and an EGR line that intercommunicates the exhaust line and the intake line, in which a part of exhaust gas exhausted from the exhaust line is delivered to the intake line via the EGR line to be recirculated in the engine, is provided with a liquid cooling heat exchanger made of a corrosion-resistant material at downstream of an intersection with the EGR line in the intake line. | 01-22-2009 |
20100319662 | EGR VALVE DEVICE - An EGR valve device includes a valve housing of which inside exhaust gas passes through, a poppet valve as a valve body accommodated in the valve housing, and a hydraulic servo actuator for driving the poppet valve to be opened and closed. The hydraulic servo actuator is provided by a three-port or four-port servo valve. | 12-23-2010 |
Tadashi Iijima, Kawasaki-Shi JP
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20090218230 | METHOD OF PRODUCING ELECTRONIC COMPONENT - A method of producing an electronic component includes forming a film of a first metal above a substrate; converting partly the film of the first metal into a film containing a second metal by replacement of at least part of the first metal with the second metal; forming a film of a third metal above the film containing the second metal; and removing the film of the first metal other than the film containing the second metal by wet etching using the film of the third metal as a mask. | 09-03-2009 |
20150048468 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a first light-receiving portion and a first light guide layer. The first light-receiving portion is formed in the surface of a semiconductor substrate. The first light guide layer is formed to correspond to a portion above the first light-receiving portion, and has an inverse tapered shape in which the width becomes larger from an upper surface a lower surface. The inverse tapered shape ranges from the upper surface the lower surface. | 02-19-2015 |
Tadashi Iijima, Kanagawa JP
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20090200664 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow. | 08-13-2009 |
20120028463 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow. | 02-02-2012 |
20120241892 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - In a method for manufacturing a semiconductor device according to an embodiment, a trench is formed in an outer peripheral portion of a chip region on a bonding surface of a support substrate, and a semiconductor substrate having a chip ring in the outer peripheral portions of the chip regions on an inside of a dicing line respectively and the support substrate are bonded to position the trench from above the chip ring to the inside of the dicing line. In the method for manufacturing a semiconductor device, furthermore, the semiconductor substrate and the support substrate which are bonded to each other are subjected to dicing along the dicing line. | 09-27-2012 |
20120244657 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device according to an embodiment, an epitaxial semiconductor layer is epitaxially grown on a semiconductor substrate, a photoelectric converting portion is formed on the epitaxial semiconductor layer, a wiring layer is formed on the epitaxial semiconductor layer after forming the photoelectric converting portion, a support substrate is bonded onto the wiring layer, and the semiconductor substrate is etched from an opposite surface side to a side for the bonding after the bonding. In the method for manufacturing a semiconductor device, an amorphous Si layer is formed on the opposite surface side of the epitaxial semiconductor layer after the etching and an antireflection film and a color filter are formed on the amorphous Si layer in sequence. | 09-27-2012 |
Tadashi Iijima, Yorktown Heights, NY US
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20090146290 | Interconnect Structure and Method for Semiconductor Device - An interconnect method in a semiconductor device may include a step of examining various regions of an inter layer dielectric to identify regions having high densities or concentrations of trench features. A cap insulator layer may be added to the dielectric to assist in outgassing of absorbed impurities from the dielectric, but may be removed from the high density areas to allow the lower density areas to increase outgassing. The lower density areas may then compensate for increased outgassing on the high density areas due to the trench features, and may result in an overall device with a more stable dielectric constant across the device. | 06-11-2009 |
Tadashi Iijima, Ryugasaki JP
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20090056399 | METHOD FOR EXECUTING WATER JET PEENING - A method for executing water jet peening for giving an impact force to a surface of a structure member by a crushing pressure of a water jet and cavitation and improving residual stress, or washing, or reforming said surface, | 03-05-2009 |
Tadashi Iijima, Oyama-Shi JP
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20130164181 | REDUCING AGENT AQUEOUS SOLUTION MIXING DEVICE AND EXHAUST GAS POST-TREATMENT DEVICE - A reducing agent aqueous solution mixing device includes an exhaust pipe, an injector, an inner pipe and a tubular guide member. The exhaust pipe includes an elbow part having a curved portion, and a linear part disposed on a downstream side of the elbow part. The injector is disposed outside the curved portion and injects only a reducing agent aqueous solution into the elbow part towards the linear part. The inner pipe is disposed on an exhaust stream downstream side of the injector within the exhaust pipe with an inlet portion opening thereof facing the injector and an outer peripheral surface thereof being spaced apart from the inner wail of the linear art. The inner pipe allows the exhaust as to flow through the inside thereof and the outer periphery thereof. A tubular guide member directs the reducing agent aqueous solution injected from the injector to the inner pipe. | 06-27-2013 |
Tadashi Iijima, Yuuki-Shi JP
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20130164182 | REDUCING AGENT AQUEOUS SOLUTION MIXING DEVICE AND EXHAUST GAS POST-TREATMENT DEVICE - A reducing agent aqueous solution mixing device includes an exhaust pipe, an injector, a mixing pipe and an inner pipe. The exhaust pipe includes an elbow part having a curved portion, and a linear part disposed on the downstream side of the elbow part. The injector is disposed outside the curved portion and injects the reducing agent aqueous solution towards the linear part. The mixing pipe is disposed inside the elbow part to enclose a surrounding of the reducing agent aqueous solution injected from the injector, and includes a plurality of openings on an outer peripheral surface thereof. The inner pipe is disposed on the downstream side of the mixing pipe and spaced apart from an outlet portion of the mixing pipe and from an inner wall of the linear part, and allows the exhaust gas to flow through the inside thereof and the outer periphery thereof. | 06-27-2013 |
20130164183 | REDUCING AGENT AQUEOUS SOLUTION MIXING DEVICE AND EXHAUST GAS POST-TREATMENT DEVICE - A reducing agent aqueous solution mixing device includes an exhaust pipe, an injector, a mixing pipe, an inner pipe and a flow section. The exhaust pipe includes an elbow part and a linear part. The injector is disposed in the elbow part and injects a reducing agent aqueous solution. The mixing pipe is disposed to enclose a surrounding of the reducing agent aqueous solution injected from the injector, and includes an outlet portion formed spaced apart from an inner wall of the exhaust pipe, and a plurality of openings formed on the outer peripheral surface thereof. The inner pipe is disposed in the linear part and allows the exhaust gas to flow through the inside and the outer periphery thereof. The flow section is formed between the outlet portion of the mixing the inner wall of the exhaust pipe and directs the exhaust gas to the inner pipe. | 06-27-2013 |