Patent application number | Description | Published |
20110316046 | Field Effect Transistor Device - A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material. | 12-29-2011 |
20120086046 | SELF ALIGNED DEVICE WITH ENHANCED STRESS AND METHODS OF MANUFACTURE - A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further includes forming a gate structure in the active channel region formed from the stressed Si layer. | 04-12-2012 |
20120104507 | METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A GATE FIRST FLOW - A method of manufacturing a complementary metal oxide semiconductor (CMOS) circuit, in which the method includes a reactive ion etch (RIE) of a CMOS circuit substrate that forms recesses, the CMOS circuit substrate including: an n-type field effect transistor (n-FET) region; a p-type field effect transistor (p-FET) region; an isolation region disposed between the n-FET and p-FET regions; and a gate wire comprising an n-FET gate, a p-FET gate, and gate material extending transversely from the n-FET gate across the isolation region to the p-FET gate, in which the recesses are formed adjacent to sidewalls of a reduced thickness; growing silicon germanium (SiGe) in the recesses; depositing a thin insulator layer on the CMOS circuit substrate; masking at least the p-FET region; removing the thin insulator layer from an unmasked n-FET region and an unmasked portion of the isolation region; etching the CMOS circuit substrate with hydrogen chloride (HCl) to remove the SiGe from the recesses in the n-FET region; and growing silicon carbon (SiC) in the exposed recesses. | 05-03-2012 |
20120112208 | STRESSED TRANSISTOR WITH IMPROVED METASTABILITY - An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material. | 05-10-2012 |
20120228639 | SELF ALIGNED DEVICE WITH ENHANCED STRESS AND METHODS OF MANUFACTURE - A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further includes forming a gate structure in the active channel region formed from the stressed Si layer. | 09-13-2012 |
20130134444 | STRESSED TRANSISTOR WITH IMPROVED METASTABILITY - An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material. | 05-30-2013 |
20130161759 | METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A GATE FIRST FLOW - A complementary metal oxide semiconductor (CMOS) circuit incorporating a substrate and a gate wire over the substrate. The substrate comprises an n-type field effect transistor (n-FET) region, a p-type field effect transistor (p-FET) region and an isolation region disposed between the n-FET and p-FET regions. The gate wire comprises an n-FET gate, a p-FET gate, and gate material extending transversely from the n-FET gate across the isolation region to the p-FET gate. A first conformal insulator covers the gate wire and a second conformal insulator is on the first conformal insulator positioned over the p-FET gate without extending laterally over the n-FET gate. Straining regions for producing different types of strain are formed in recess etched into the n-FET and p-FET regions of the substrate. | 06-27-2013 |
20130175547 | FIELD EFFECT TRANSISTOR DEVICE - A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material. | 07-11-2013 |
20140077275 | Semiconductor Device and Method With Greater Epitaxial Growth on 110 Crystal Plane - A semiconductor processing method is provided which promotes greater growth on <110> crystallographic planes than on other crystallographic planes. Growth rates with the process can be reversed compared to typical epitaxial growth processes such that the highest rate of growth occurs on <110> crystallographic planes and the least amount of growth occurs on <100> crystallographic planes. The process can be applied to form embedded stressor regions in planar field effect transistors, and the process can be used to grow semiconductor layers on exposed wall surfaces of adjacent fins in source-drain regions of finFETs to fill spaces between the fins. | 03-20-2014 |
20150249086 | THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES - A third type of metal gate stack is provided above an isolation structure and between a replacement metal gate n-type field effect transistor and a replacement metal gate p-type field effect transistor. The third type of metal gate stack includes at least three different components. Notably, the third type of metal gate stack includes, as a first component, an n-type workfunction metal layer, as a second component, a p-type workfunction metal layer, and as a third component, a low resistance metal layer. In some embodiments, the uppermost surface of the first, second and third components of the third type of metal gate stack are all substantially coplanar with each other. In other embodiments, an uppermost surface of the third component of the third type of metal gate stack is non-substantially coplanar with an uppermost surface of both the first and second components of the third type of metal gate stack. | 09-03-2015 |
Patent application number | Description | Published |
20110215376 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 09-08-2011 |
20120181578 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 07-19-2012 |
20140213029 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 07-31-2014 |
Patent application number | Description | Published |
20080233064 | HIGH SHINE, STICK-SHAPED COMSMETIC PRODUCTS - The present invention provides a cosmetic composition having a gloss of at least about 85 gloss units (gu), as well as sufficient shape retention properties for forming a stick-shaped cosmetic product. Specifically, the cosmetic composition contains: (a) a high viscosity oil component; (b) a medium viscosity oil component; (c) a low viscosity oil component; and (d) an oily gelling agent comprising an ester of glycerol or polyglycerin with an aliphatic or hydroxyl aliphatic acid and a dibasic acid. A stick-shaped cosmetic product formed by the cosmetic composition of the present invention exhibits a high-shine that is not available in conventional stick-shaped cosmetic products and yet retains the high make-up coverage typically provided by conventional stick-shaped cosmetic products. | 09-25-2008 |
20090000636 | Mascara For Use With A Vibrating Applicator: Compositions And Methods - Compositions for use with a mascara applicator with vibrating applicator head. The frequency, amplitude and geometry of the vibrating head are sufficient to significantly alter the rheological properties of thixotropic and anti-thixotropic mascara compositions, including an effect that persists after the vibration has stopped. The present invention allows the mascara to be manipulated for improved results, greater flexibility in formulation, benefits in manufacture, as well as other benefits. | 01-01-2009 |
20090035335 | Cosmetic Composition Containing a Polymer Blend - The present invention relates to a cosmetic composition containing a unique polymer blend, which includes: (a) a first polymeric film-former having a first glass transition temperature ranging from about −20° C. to about 0° C.; (b) a second polymeric film-former having a second glass transition temperature that is at least 50° C. higher than the first glass transition temperature; and (c) a third cross-linked polymeric film-former. The cosmetic composition of the present invention can be applied to human skin or keratinous fibers for forming a film thereon with exceptionally long wearability, reduced flaking and smudge properties, and good removability by warm water. | 02-05-2009 |
20100247470 | Mascara Compositions And Methods For Treating Lashes - A water and oil emulsion mascara composition comprising a plurality of water soluble or dispersible film forming polymers in the aqueous phase and being structured by one or more emulsifiers in solid or semi-solid form. | 09-30-2010 |
20110052734 | Transparent Oil Gelling System - The invention relates to a gellant system for a polar oil comprising gellant effective amounts of silica, a sugar fatty acid ester and a long chain polymer. The gellant system of the invention is useful in gelling polar oils to produce transparent or translucent gels useful in topical compositions. | 03-03-2011 |
20110171152 | High Shine, Stick-Shaped Cosmetic Products - The present invention provides a cosmetic composition having a gloss of at least about 85 gloss units (gu), as well as sufficient shape retention properties for forming a stick-shaped cosmetic product. Specifically, the cosmetic composition contains: (a) a high viscosity oil component; (b) a medium viscosity oil component; (c) a low viscosity oil component; and (d) an oily gelling agent comprising an ester of glycerol or polyglycerin with an aliphatic or hydroxyl aliphatic acid and a dibasic acid. A stick-shaped cosmetic product formed by the cosmetic composition of the present invention exhibits a high-shine that is not available in conventional stick-shaped cosmetic products and yet retains the high make-up coverage typically provided by conventional stick-shaped cosmetic products. | 07-14-2011 |
20120301416 | Cosmetic Composition Containing A Polymer Blend - The present invention relates to a cosmetic composition containing a unique polymer blend, which includes: (a) a first polymeric film-former having a first glass transition temperature ranging from about −20° C. to about 0° C.; (b) a second polymeric film-former having a second glass transition temperature that is at least 50° C. higher than the first glass transition temperature; and (c) a third cross-linked polymeric film-former. The cosmetic composition of the present invention can be applied to human skin or keratinous fibers for forming a film thereon with exceptionally long wearability, reduced flaking and smudge properties, and good removability by warm water. | 11-29-2012 |
20140093465 | Mascara For Use With A Vibrating Applicator: Compositions And Methods - Compositions for use with a mascara applicator with vibrating applicator head. The frequency, amplitude and geometry of the vibrating head are sufficient to significantly alter the rheological properties of thixotropic and anti-thixotropic mascara compositions, including an effect that persists after the vibration has stopped. The mascara may be manipulated for improved results, greater flexibility in formulation, benefits in manufacture, as well as other benefits. | 04-03-2014 |