Patent application number | Description | Published |
20120038016 | BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE - In a back-illuminated solid-state image pickup device including a semiconductor substrate | 02-16-2012 |
20120256287 | BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE - In a back-illuminated solid-state image pickup device including a semiconductor substrate | 10-11-2012 |
20120287440 | OCT DEVICE - A photodetector of an OCT device is provided with: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity type formed on the first principal surface side; and charge transfer electrodes provided on the first principal surface and transferring generated charges. In the silicon substrate, an accumulation layer of the first conductivity type having a higher impurity concentration than the silicon substrate is formed on the second principal surface side, and an irregular asperity is formed in a region opposed to at least the semiconductor region, in the second principal surface. The region in which the irregular asperity is formed on the second principal surface of the silicon substrate is optically exposed. | 11-15-2012 |
20130107097 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130112853 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 05-09-2013 |
20130270609 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device is provided with a plurality of photoelectric converting portions each having a photosensitive region and an electric potential gradient forming region, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions each arranged corresponding to a photoelectric converting portion and on the side of the other short side forming a planar shape of the photosensitive region, and accumulates a charge generated in the photosensitive region of the corresponding photoelectric converting portion, and a shift register which acquires charges respectively transferred from the plurality of buffer gate portions, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion has at least two gate electrodes to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction. | 10-17-2013 |
20130285188 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 10-31-2013 |
20130292742 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 11-07-2013 |
20140091421 | SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE - A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads. | 04-03-2014 |
20150137301 | MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step. | 05-21-2015 |
20150155314 | SOLID-STATE IMAGE CAPTURE DEVICE - A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat. | 06-04-2015 |
20150187649 | MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step. | 07-02-2015 |
20150200216 | Anti-Reflection Layer For Back-Illuminated Sensor - An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. | 07-16-2015 |
Patent application number | Description | Published |
20150027666 | HEAT EXCHANGER AND HEAT EXCHANGE DEVICE - A heat exchanger including a tubular core case, a pair of end plates for closing opposite ends of the core case, and a plurality of heat exchange tubes supported at opposite ends thereof by the end plates and allowing flow of a first heating medium inside thereof. One end plate is disposed on an upstream side of the first heating medium as an upstream end plate while the other end plates is disposed on a downstream side of the first heating medium as a downstream end plate. The downstream end plate comprises a downstream bottom surface part for supporting downstream end parts of the heat exchange tubes, and a downstream wall part formed integrally with and rising from a peripheral edge of the downstream bottom surface part, and a top end part of the downstream wall part is oriented toward upstream of the flow of the first heating medium. | 01-29-2015 |
20150369543 | HEAT EXCHANGER AND METHOD OF MANUFACTURING SAME - A heat exchanger includes: a pair of end plates closing opposite ends of a cylindrical core case; and a plurality of heat exchange tubes each supported at opposite end portions by the end plates, a first heat medium being caused to flow through the interior of the tubes, each of the tubes being formed by: bending a plate material so that opposite side edge portions of the bent plate material are superimposed on each other, one of the superimposed side edge portions, located inward of the other of the superimposed side edge portions, forming an inner plate portion, the other of the superimposed side edge portions forming an outer plate portion; and then causing a first weld bead, disposed through the thickness of one of the inner and outer plate portions, to be fused to the other plate portion. | 12-24-2015 |
Patent application number | Description | Published |
20140054227 | SUGAR-IMMOBILIZED POLYMER SUBSTRATE FOR REMOVING VIRUS AND METHOD FOR REMOVING VIRUS - The present invention provides a sugar-immobilized polymer substrate for removing a virus, the polymer substrate allowing efficient removal of a hepatitis virus or the like in a fluid, and a method for removing a virus. In particular, the present invention provides a sugar-immobilized polymer substrate for removing a hepatitis virus or the like, the polymer substrate allowing, in the case of an application to blood of a living body, reduction in the amount of blood taken out of the body, reduction in the removal amount of blood useful components, low invasiveness, and shortening of the operation cycle; and a method for removing a virus. A hollow fiber membrane according to the present invention can be used as a module having a function of effectively removing a virus and a function of not removing useful plasma components. | 02-27-2014 |
20150190563 | HYDROPHILIC RESIN COMPOUND HAVING SUGAR CHAIN AFFIXED THERETO, POLYMER SUBSTRATE FOR VIRUS-REMOVAL, AND BIOCOMPATIBLE MATERIAL - Provided is: a resin compound having an immobilized sugar chain, obtained by reacting a an epoxy-group-containing compound (B) with a hydrophilic resin (A), followed by reacting an amino-group-containing compound (C) therewith, and then reacting a sugar therewith; a virus-removal-polymer substrate obtained by coating the resin compound on a polymer support to immobilize a sugar chain that can adsorb a virus; and a biocompatible material using the resin compound. | 07-09-2015 |
Patent application number | Description | Published |
20080203560 | Semiconductor device - A semiconductor device is produced using a housing having a hollow cavity for embracing a semiconductor sensor chip (e.g., a microphone chip) for detecting pressure variations and an LSI chip for driving the semiconductor sensor chip, both of which are mounted on a chip mount surface. An opening allowing the cavity to communicate with external space is formed at a prescribed position of the chip mount surface within the housing, wherein the LSI chip is positioned above the opening so as to cover at least a part of the opening of the housing. Thus, it is possible to reduce negative influences of environmental factors applied to the semiconductor sensor chip without using an environmental barrier, and it is possible to downsize the semiconductor device. | 08-28-2008 |
20090096041 | SEMICONDUCTOR DEVICE - A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip. | 04-16-2009 |
20090175477 | Vibration transducer - A vibration transducer (e.g. a condenser microphone) having a high sensitivity is constituted of a housing composed of an airtight material having a through-hole, a vibration conversion die (e.g. a microphone die) which is attached to the interior surface of the housing at the prescribed position embracing the through-hole in plan view, and a barrier diaphragm composed of an airtight material whose external periphery is attached to the exterior surface of the housing in an airtight manner oppositely to the prescribed position. The barrier diaphragm has a vibration area which is larger than the sectional area of the through-hole. A space allowing the barrier diaphragm to vibrate is formed between the barrier diaphragm and the exterior surface of the housing, wherein the distance between the barrier diaphragm and the exterior surface of the housing can be gradually reduced from the vibration axis to the external periphery. | 07-09-2009 |
20090185700 | Vibration transducer and manufacturing method therefor - A vibration transducer (or a pressure transducer) is constituted of a cover, a plate, a diaphragm, and a substrate having a back cavity. The diaphragm is positioned above the substrate so as to cover the opening of the back cavity. The plate has a radial gear-like shape constituted of a center portion positioned just above the diaphragm and a plurality of joints. The cover horizontally surrounds the plate with slits therebetween so that the cover is electrically separated from the plate and is positioned above the periphery of the diaphragm. A plurality of pillar structures joins the plurality of joints of the plate so as to support the plate above the diaphragm with a gap layer therebetween. By reducing the widths of slits, it is possible to prevent foreign matter from entering into the air layer between the plate and the diaphragm. | 07-23-2009 |
20090190782 | Vibration transducer - A vibration transducer includes a substrate, a diaphragm formed using deposited films having conductive property, which has a plurality of arms extended from the center portion in a radial direction, a plate formed using deposited films having conductive property, and a plurality of diaphragm supports formed using deposited films, which join the arms so as to support the diaphragm above the substrate with a prescribed gap therebetween. A plurality of bumps is formed in the arms of the diaphragm so as to prevent the diaphragm from being attached to the substrate or the plate. When the diaphragm vibrates relative to the plate, an electrostatic capacitance therebetween is varied so as to detect variations of pressure applied thereto. In addition, a plurality of diaphragm holes is appropriately aligned in the arms of the diaphragm so as to improve the sensitivity while avoiding the occurrence of adherence. | 07-30-2009 |
20090230487 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND LID FRAME - A semiconductor device includes: a substrate; a semiconductor chip that is fixed to a first surface of the substrate; a chip covering lid body that is provided on the first surface of the substrate so as to cover the semiconductor chip and that forms a hollow first space portion that surrounds the semiconductor chip, and in which there is provided a substantially cylindrical aperture portion that extends to the outer side of the first space portion and has an aperture end at a distal end thereof and that is connected to the first space portion; and a first resin mold portion that forms the first space portion via the chip covering lid body and covers the substrate such that the aperture end is exposed, and that fixes the substrate integrally with the chip covering lid body. | 09-17-2009 |
20100072564 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned. | 03-25-2010 |
20140091404 | ACCELERATION SENSOR - A first sensor section installed in an acceleration sensor employs a first elastic member which is elastically movable according to acceleration in the first and third directions and is stiff against acceleration in second direction so as to restrict elasticity in second direction. Thereby, the first sensor section is provided as a biaxial acceleration sensor which detects the first and third directional acceleration according to a change of electrostatic capacity between a first weight (i.e. the first movable electrode) made movable according to acceleration and the first fixed electrode. A second sensor section installed in the acceleration sensor is structurally identical with the first sensor section and configured to detect acceleration in second and third directions. Thereby, such combination of the first sensor section and the second sensor section constitutes a three-dimensional acceleration sensor. | 04-03-2014 |
20140144235 | ACCELERATION SENSOR - An acceleration sensor achieving improvement of sensitivity and comprehensive miniaturization as a device includes a first sensor. The first sensor is furnished with an electrostatic capacitor that is configured such that a first fixed electrode, a second fixed electrode and a movable electrode are intensively arranged in a row. In the electrostatic capacitor, the first fixed electrode, the second fixed electrode and the movable electrode are arranged adjoining one another in acceleration detection direction (y-axis direction) at a position corresponding to the center of a weight in a plane view of a substrate. At one of longitudinal-side's ends of each electrode (one of ends in x-axis direction), connectors are provided so as to connect the first fixed electrode and the second fixed electrode to the substrate by connectors. | 05-29-2014 |
Patent application number | Description | Published |
20080229840 | Semiconductor device - A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip. | 09-25-2008 |
20090136064 | Vibration transducer and manufacturing method therefor - A vibration transducer is constituted of a substrate, a diaphragm having a conductive property, a plate having a conductive property, and a plurality of first spacers having pillar shapes which are formed using a deposited film having an insulating property joining the plate so as to support the plate relative to the diaphragm with a gap therebetween. It is possible to introduce a plurality of second spacers having pillar shapes support the plate relative to the substrate with a gap therebetween, and/or a plurality of third spacers having pillar shapes which support the diaphragm relative to the substrate with a gap therebetween. When the diaphragm vibrates relative to the plate, an electrostatic capacitance formed therebetween is varied so as to detect vibration with a high sensitivity. The diaphragm has a plurality of arms whose outlines are curved so that the intermediate regions thereof are reduced in width. | 05-28-2009 |
20090175477 | Vibration transducer - A vibration transducer (e.g. a condenser microphone) having a high sensitivity is constituted of a housing composed of an airtight material having a through-hole, a vibration conversion die (e.g. a microphone die) which is attached to the interior surface of the housing at the prescribed position embracing the through-hole in plan view, and a barrier diaphragm composed of an airtight material whose external periphery is attached to the exterior surface of the housing in an airtight manner oppositely to the prescribed position. The barrier diaphragm has a vibration area which is larger than the sectional area of the through-hole. A space allowing the barrier diaphragm to vibrate is formed between the barrier diaphragm and the exterior surface of the housing, wherein the distance between the barrier diaphragm and the exterior surface of the housing can be gradually reduced from the vibration axis to the external periphery. | 07-09-2009 |
20090190782 | Vibration transducer - A vibration transducer includes a substrate, a diaphragm formed using deposited films having conductive property, which has a plurality of arms extended from the center portion in a radial direction, a plate formed using deposited films having conductive property, and a plurality of diaphragm supports formed using deposited films, which join the arms so as to support the diaphragm above the substrate with a prescribed gap therebetween. A plurality of bumps is formed in the arms of the diaphragm so as to prevent the diaphragm from being attached to the substrate or the plate. When the diaphragm vibrates relative to the plate, an electrostatic capacitance therebetween is varied so as to detect variations of pressure applied thereto. In addition, a plurality of diaphragm holes is appropriately aligned in the arms of the diaphragm so as to improve the sensitivity while avoiding the occurrence of adherence. | 07-30-2009 |
20090200620 | Mems transducer and manufacturing method therefor - An MEMS transducer is constituted of a diaphragm, a plate, a support structure for supporting the diaphragm and the plate with a gap layer surrounded by an interior wall, an electrode film (e.g. a pad conductive film) for covering a contact hole formed in the support structure, and a protective film (e.g. a pad protective film) which is formed on the support structure externally of the interior wall so as to cover the side surface of the electrode film having low chemical stability. The protective film is formed in the limited area including a part of the surface of the electrode film except for its center portion and the surrounding area of the electrode film. This allows the protective film to use materials having high membrane stress such as silicon nitride or silicon nitride oxide. | 08-13-2009 |
20120082325 | CONDENSER MICROPHONE ARRAY CHIP - A plurality of structures of condenser microphones is fabricated in a single condenser microphone array chip. The condenser microphone array chip includes a substrate having a plurality of openings serving as air cavities, a first insulating layer formed in the outer periphery of the openings, a first electrode layer stretched over each of the openings, a second insulating layer formed above the first electrode layer in the outer periphery of the openings, a second electrode layer formed above the second insulating layer relative to the first electrode layer via an air gap therebetween. The structures are connected via a plurality of bridges and separated via a plurality of channels therebetween. The channels circumvent the bridges so that at least the second insulating layer is partially removed from the channels. The bridges are formed using the second electrode layer serving as wiring for electrically connecting the structures of condenser microphones. | 04-05-2012 |