Patent application number | Description | Published |
20080237848 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device which makes equalization of wirings between address system chips easy and reduce the influence of crosstalk noise and capacitive coupling noise among data system wirings for connecting the chips. There are mounted, on a module board, a plurality of stacked memory chips which a data processor chip simultaneously accesses. Address system bonding pads to which a plurality of memory chips correspond are commonly coupled by a wire to a bonding lead at one end of the module board wiring whose other end is coupled by a wire to an address system bonding pads of the data processor. Data system bonding pads of the data processor chip are individually coupled to data system bonding pads of the memory chip. With respect to an arrangement of the plurality of data system bonding pads of the data processor chip, an arrangement of the data system bonding pads to which the memory chip, coupled by the data system wiring, corresponds is made such that memory chips are disposed in an alternating sequence. | 10-02-2008 |
20090237129 | SEMICONDUCTOR DEVICE AND DATA PROCESSOR - Synchronization between command and address signals commonly coupled to a plurality of memory devices to be operated in parallel and a clock signal coupled to the memory devices is achieved, while suppressing an increase in the clock wiring length. A semiconductor device has a data processing device mounted on a wiring substrate and a plurality of memory devices accessed in parallel by the data processing device. The data processing device outputs the command and address signals as a first frequency from command and address terminals, and outputs a clock signal as a second frequency from a clock terminal. The second frequency is set to multiple times of the first frequency, and an output timing equal to or earlier than a cycle starting phase of the clock signal output from the clock terminal can be selected to the command and address signals output from the command and address terminals. | 09-24-2009 |
20100244238 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device which makes equalization of wirings between address system chips easy and reduce the influence of crosstalk noise and capacitive coupling noise among data system wirings for connecting the chips. There are mounted, on a module board, a plurality of stacked memory chips which a data processor chip simultaneously accesses. Address system bonding pads to which a plurality of memory chips correspond are commonly coupled by a wire to a bonding lead at one end of the module board wiring whose other end is coupled by a wire to an address system bonding pads of the data processor. Data system bonding pads of the data processor chip are individually coupled to data system bonding pads of the memory chip. With respect to an arrangement of the plurality of data system bonding pads of the data processor chip, an arrangement of the data system bonding pads to which the memory chip, coupled by the data system wiring, corresponds is made such that memory chips are disposed in an alternating sequence. | 09-30-2010 |
20100314761 | SEMICONDUCTOR DEVICE WITH REDUCED CROSS TALK - Mutual inductance from an external output signal system to an external input signal system, in which parallel input/output operation is enabled, is reduced. A semiconductor integrated circuit has a plurality of external connection terminals facing a package substrate, and has an external input terminal and an external output terminal, in which parallel input/output operation is enabled, as part of the external connection terminals. The package substrate has a plurality of wiring layers for electrically connecting between the external connection terminals and module terminals corresponding to each other. A first wiring layer facing the semiconductor integrated circuit has a major wiring for connecting between the external input terminal and a module terminal corresponding to each other, and a second wiring layer in which the module terminals are formed has a major wiring for connecting between an external output terminal and a module terminal corresponding to each other. A major signal wiring of an external output system connected to the external output terminal, which may be a noise source, is made to be in a wiring layer distant from the semiconductor integrated circuit. | 12-16-2010 |
20110016345 | SEMICONDUCTOR DEVICE AND DATA PROCESSOR - Synchronization between command and address signals commonly coupled to a plurality of memory devices to be operated in parallel and a clock signal coupled to the memory devices is achieved, while suppressing an increase in the clock wiring length. A semiconductor device has a data processing device mounted on a wiring substrate and a plurality of memory devices accessed in parallel by the data processing device. The data processing device outputs the command and address signals as a first frequency from command and address terminals, and outputs a clock signal as a second frequency from a clock terminal. The second frequency is set to multiple times of the first frequency, and an output timing equal to or earlier than a cycle starting phase of the clock signal output from the clock terminal can be selected to the command and address signals output from the command and address terminals. | 01-20-2011 |
20110127671 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device which makes equalization of wirings between address system chips easy and reduce the influence of crosstalk noise and capacitive coupling noise among data system wirings for connecting the chips. There are mounted, on a module board, a plurality of stacked memory chips which a data processor chip simultaneously accesses. Address system bonding pads to which a plurality of memory chips correspond are commonly coupled by a wire to a bonding lead at one end of the module board wiring whose other end is coupled by a wire to an address system bonding pads of the data processor. Data system bonding pads of the data processor chip are individually coupled to data system bonding pads of the memory chip. With respect to an arrangement of the plurality of data system bonding pads of the data processor chip, an arrangement of the data system bonding pads to which the memory chip, coupled by the data system wiring, corresponds is made such that memory chips are disposed in an alternating sequence. | 06-02-2011 |
20130128647 | DATA PROCESSING DEVICE - A microcomputer provided on a rectangular semiconductor board has memory interface circuits. The memory interface circuits are separately disposed in such positions as to extend along the peripheries of the semiconductor board on both sides from one corner as a reference position. In this case, limitations to size reduction imposed on the semiconductor board can be reduced compared with a semiconductor board having memory interface circuits only on one side. Respective partial circuits on each of the separated memory interface circuits have equal data units associated with data and data strobe signals. Thus, the microcomputer has simplified line design on a mother board and on a module board. | 05-23-2013 |
20140160826 | DATA PROCESSING DEVICE - A microcomputer provided on a rectangular semiconductor board has memory interface circuits. The memory interface circuits are separately disposed in such positions as to extend along the peripheries of the semiconductor board on both sides from one corner as a reference position. In this case, limitations to size reduction imposed on the semiconductor board can be reduced compared with a semiconductor board having memory interface circuits only on one side. Respective partial circuits on each of the separated memory interface circuits have equal data units associated with data and data strobe signals. Thus, the microcomputer has simplified line design on a mother board and on a module board. | 06-12-2014 |
20150036406 | DATA PROCESSING DEVICE - A microcomputer provided on a rectangular semiconductor board has memory interface circuits. The memory interface circuits are separately disposed in such positions as to extend along the peripheries of the semiconductor board on both sides from one corner as a reference position. In this case, limitations to size reduction imposed on the semiconductor board can be reduced compared with a semiconductor board having memory interface circuits only on one side. Respective partial circuits on each of the separated memory interface circuits have equal data units associated with data and data strobe signals. Thus, the microcomputer has simplified line design on a mother board and on a module board. | 02-05-2015 |
Patent application number | Description | Published |
20100026185 | SELF-BALLASTED LAMP - A substrate is attached to one edge side of a radiator and a globe is attached covering the substrate. Heat-radiating fins are provided on the other edge side of the radiator and an air-cooling unit is rotatably provided inside the heat-radiating fins which enables to freely rotate. A case storing a circuit part is attached to the other edge side of the radiator and a cap is provided to the case. By the wind blast from the air-cooling unit, the heat-radiating fins are caused to be a part of the ventilation path to allow for ventilation of the inside of the radiator. | 02-04-2010 |
20110291594 | LAMP DEVICE AND LIGHTING FIXTURE - In a lamp device | 12-01-2011 |
20120319581 | Lighting Device - A lighting device may include a substrate attached to one edge side of a radiator and a cover may be attached to cover the substrate. Heat-radiating fins may be provided on the other edge side of the radiator and an air-cooling unit may be rotatably provided inside the heat-radiating fins, thereby enabling freely rotation. In one or more examples, a case storing a circuit part is attached to the other edge side of the radiator and a cap is provided to the case. By the air flow from the air-cooling unit, the heat-radiating fins are caused to be a part of the ventilation path to allow for ventilation of the inside of the radiator. | 12-20-2012 |
20120320593 | Light Emitting Diode (LED) Bulb - A lighting device may include a substrate attached to one edge side of a radiator and a cover may be attached to cover the substrate. Heat-radiating fins may be provided on the other edge side of the radiator and an air-cooling unit may be rotatably provided inside the heat-radiating fins, thereby enabling freely rotation. In one or more examples, a case storing a circuit part is attached to the other edge side of the radiator and a cap is provided to the case. By the air flow from the air-cooling unit, the heat-radiating fins are caused to be a part of the ventilation path to allow for ventilation of the inside of the radiator. | 12-20-2012 |
Patent application number | Description | Published |
20140302313 | RADIATION CURABLE PRESSURE SENSITIVE ADHESIVE SHEET - To provide a radiation curable pressure sensitive adhesive sheet capable of yielding both a pressure sensitive adhesive sheet with good initial adhesion to an adherend before irradiation and a pressure sensitive adhesive sheet with good rigidity after irradiation. A radiation curable pressure sensitive adhesive sheet includes a (meth)acrylic copolymer having a radiation reactive site and a plasticizer capable of bonding with the (meth)acrylic copolymer upon being irradiated. | 10-09-2014 |
20150329685 | RELEASE FILM FORMED FROM POLYLACTIC ACID-CONTAINING RESIN - Polylactic acid-containing resin composition that includes a polylactic acid; and a (meth)acryl-silicone copolymer that includes a methyl(meth)acrylate; and a reactive silicone, wherein the (meth)acryl-silicone copolymer has a weight average molecular weight of 25,000 or more. Methods for producing a polylactic acid-containing resin composition, polylactic acid-containing resin films, polylactic acid-containing resin release films, polylactic acid-containing resin release films, and methods for producing polylactic acid-containing resin films are also disclosed. | 11-19-2015 |
20160068718 | METHOD OF PRODUCING A LAMINATE COMPRISING A CURED ADHESIVE SHEET - Problem: To provide a method for producing a laminate comprising a thick, highly transparent cured adhesive sheet exhibiting flow characteristics accompanied by satisfactory fluidity and satisfactory initial adhesion to an adherend before irradiation, and satisfactory hardness (in particular, a high storage modulus) after irradiation. Solution: A method for producing a laminate comprising a first substrate, a second substrate, and a cured adhesive sheet disposed therebetween, the method comprising steps of: forming into a sheet a radiation-curable adhesive sheet precursor comprising a polymer/monomer mixture comprising a partially polymerized (meth) acrylic monomer, a monomer having radiation reactive sites activated by short-wavelength radiation of a first wavelength or less, and a photoinitiator for initiating polymerization of the polymer/monomer mixture and the radiation reactive site-possessing monomer via radiation of a wavelength greater than the first wavelength; irradiating the precursor with radiation of a wavelength greater than the specific wavelength to polymerize the radiation-curable adhesive sheet precursor, forming a radiation-curable adhesive sheet; disposing the radiation-curable adhesive sheet adjacent to at least one surface of the first substrate; disposing the second substrate adjacent to a radiation-curable adhesive sheet; applying heat and/or pressure to the radiation-curable adhesive sheet; and irradiating the radiation-curable adhesive sheet with radiation comprising short-wavelength radiation of a first wavelength or less to obtain a cured adhesive sheet. | 03-10-2016 |
Patent application number | Description | Published |
20090136482 | DRUG TARGET PROTEIN AND TARGET GENE, AND SCREENING METHOD - The present invention provides target proteins and target genes for bioactive substances such as drugs, and means that enable the development of novel bioactive substances using the same. More specifically, the present invention provides target proteins and target genes for bioactive substances; screening methods for substances capable of regulating bioactivities; bioactivity regulators; a bioactive substance derivative production method; a complex comprising a bioactive substance and a target protein, and a method of producing the complex; and kits comprising a bioactive substance or a salt thereof; determination methods for the onset or risk of onset of a specified disease or condition, determination methods for susceptibility to a bioactive substance, and determination kits used for the determination methods, and the like. | 05-28-2009 |
20090143285 | TARGET PROTEIN AND TARGET GENE FOR DRUG DISCOVERY AND SCREENING METHOD - The present invention provides target proteins and target genes for bioactive substances such as drugs, and means that enable the development of novel bioactive substances using the same. More specifically, the present invention provides target proteins and target genes for bioactive substances; screening methods for substances capable of regulating bioactivities; bioactivity regulators; a bioactive substance derivative production method; a complex comprising a bioactive substance and a target protein, and a method of producing the complex; and kits comprising a bioactive substance or a salt thereof; determination methods for the onset or risk of onset of a specified disease or condition, determination methods for susceptibility to a bioactive substance, and determination kits used for the determination methods, and the like. | 06-04-2009 |
20090233274 | DRUG DEVELOPMENT TARGET PROTEIN AND TARGET GENE, AND METHOD OF SCREENING - The present invention provides novel target proteins and target genes for drug discovery, and the means that enable the development of novel drugs using the same. More particularly, the present invention provides NCS proteins and genes thereof; screening methods for drug (for example, anti-central nervous disease drug); agents for regulating disease (for example, central nervous disease); production methods of a drug derivative; a complex comprising a drug and NCS protein, and a method of producing the complex; a kits comprising a drug or a salt thereof; determination methods for the onset or risk of onset of a specified disease, determination methods for susceptibility to a drug, and determination kits used for the determination methods; and the like. | 09-17-2009 |
20110269141 | TARGET PROTEIN AND TARGET GENE FOR DRUG DISCOVERY, AND SCREENING METHOD - The problems of the present invention are to provide target proteins and target genes for bioactive substances such as drugs, and means that enable the development of novel bioactive substances using the same. The present invention provides target proteins and target genes for bioactive substances; screening methods for substances capable of regulating bioactivities; bioactivity regulators; a bioactive substance derivative production method; a complex comprising a bioactive substance and a target protein, and a method of producing the complex; and kits comprising a bioactive substance or a salt thereof; determination methods for the onset or risk of onset of a specified disease or condition, determination methods for susceptibility to a bioactive substance, and determination kits used for the determination methods, and the like. | 11-03-2011 |
Patent application number | Description | Published |
20130008568 | HIGH-STRENGTH STEEL SHEET AND METHOD FOR PRODUCING SAME - A high-strength steel sheet includes, by mass %, C: 0.03% to 0.30%, Si: 0.08% to 2.1%, Mn: 0.5% to 4.0%, P: 0.05% or less, S: 0.0001% to 0.1%, N: 0.01% or less, acid-soluble Al: more than 0.004% and less than or equal to 2.0%, acid-soluble Ti: 0.0001% to 0.20%, at least one selected from Ce and La: 0.001% to 0.04% in total, and a balance of iron and inevitable impurities, in which [Ce], [La], [acid-soluble Al], and [S] satisfy 0.02≦([Ce]+[La])/[acid-soluble Al]<0.25, and 0.4≦([Ce]+[La])/[S]≦50 in a case in which the mass percentages of Ce, La, acid-soluble Al, and S are defined to be [Ce], [La], [acid-soluble Al], and [S], respectively, and a microstructure includes 1% to 50% of martensite in terms of an area ratio. | 01-10-2013 |
20130142688 | HIGH-STRENGTH STEEL SHEET EXHIBITING EXCELLENT STRETCH-FLANGE FORMABILITY AND BENDING WORKABILITY, AND METHOD OF PRODUCING MOLTEN STEEL FOR THE HIGH-STRENGTH STEEL SHEET - The present invention provides a high-strength steel sheet including: C: 0.03 to 0.25 mass %, Si: 0.1 to 2.0 mass %, Mn: 0.5 to 3.0 mass %, P: not more than 0.05 mass %, T.O: not more than 0.0050 mass %, S: 0.0001 to 0.01 mass %, N: 0.0005 to 0.01 mass %, acid-soluble Al: more than 0.01 mass %, Ca: 0.0005 to 0.0050 mass %, and a total of at least one element of Ce, La, Nd, and Pr: 0.001 to 0.01 mass %, with a balance including iron and inevitable impurities, in which the steel sheet contains a chemical component on a basis of mass that satisfies 0.7<100×([Ce]+[La]+[Nd]+[Pr])/[acid-soluble Al]≦70 and 0.2≦([Ce]+[La]+[Nd]+[Pr])/[S]≦10, the steel sheet contains compound inclusion including a first inclusion phase containing at least one element of Ce, La, Nd, and Pr, containing Ca, and containing at least one element of O and S, and a second inclusion phase having a component different from that of the first inclusion phase and containing at least one element of Mn, Si, and Al, the compound inclusion forms a spherical compound inclusion having an equivalent circle diameter in the range of 0.5 μm to 5 μm, and a ratio of the number of the spherical compound inclusion relative to the number of all inclusions having the equivalent circle diameter in the range of 0.5 μm to 5 μm is 30% or more. | 06-06-2013 |
20140030546 | HIGH-STRENGTH COLD-ROLLED STEEL SHEET HAVING EXCELLENT LOCAL DEFORMABILITY AND MANUFACTURING METHOD THEREOF - This high-strength cold-rolled steel sheet contains, in mass %, C: 0.02% to 0.20%; Si: 0.001% to 2.5%; Mn: 0.01% to 4.0%; P: 0.001% to 0.15%; S: 0.0005% to 0.03%; Al: 0.001% to 2.0%; N: 0.0005% to 0.01%; and O: 0.0005% to 0.01%; in which Si+Al is limited to less than 1.0%, and a balance being composed of iron and inevitable impurities, in which an area ratio of bainite in a metal structure is 95% or more, at a sheet thickness center portion being a range of ⅝ to ⅜ in sheet thickness from the surface of the steel sheet, an average value of pole densities of the {100}<011> to {223}<110> orientation group is 4.0 or less, and a pole density of the {332}<113> crystal orientation is 5.0 or less, and a mean volume diameter of crystal grains in the metal structure is 7 μm or less. | 01-30-2014 |
20140124101 | HIGH-STRENGTH HOT-ROLLED STEEL SHEET HAVING EXCELLENT LOCAL DEFORMABILITY AND MANUFACTURING METHOD THEREOF - This high-strength hot-rolled steel sheet having excellent local deformability contains, in mass %, C: 0.07% to 0.20%; Si: 0.001% to 2.5%; Mn: 0.01% to 4.0%; P: 0.001% to 0.15%; S: 0.0005% to 0.03%; Al: 0.001% to 2.0%; N: 0.0005% to 0.01%; and O: 0.0005% to 0.01%; and a balance being composed of iron and inevitable impurities, in which an area ratio of bainite in a metal structure is 95% or more, at a sheet thickness center portion being a range of 5/8 to 3/8 in sheet thickness from the surface of the steel sheet, an average value of pole densities of the {100}<011> to {223}<110> orientation group is 4.0 or less, and a pole density of the {332}<113> crystal orientation is 5.0 or less, and a mean volume diameter of crystal grains in the metal structure is 10 μm or less. | 05-08-2014 |
Patent application number | Description | Published |
20140175490 | SILICON-GERMANIUM LIGHT-EMITTING ELEMENT - Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element. | 06-26-2014 |
20150357543 | THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE - In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different. | 12-10-2015 |