Patent application number | Description | Published |
20080226650 | COTININE NEUTRALIZING ANTIBODY - The present application discloses monoclonal antibody against cotinine and nicotine. | 09-18-2008 |
20110263298 | METHOD AND APPARATUS FOR DISPLAYING TEXT INFORMATION IN MOBILE TERMINAL - A method and apparatus for displaying text information in the form of a list is provided. A method for displaying text information according to the present invention includes displaying a list of at least one item representing text information and a partial content of the text information; and modifying, in response to a predetermined key input, the list to show whole content of the text information corresponding to the selected one item. | 10-27-2011 |
20120294436 | METHOD AND APPARATUS FOR SWITCHING CALL MODE - A method for switching a call mode and a method thereof are provided. The method for switching during a call mode in a terminal includes: providing a conference call; providing a switch interface for switching a private call connection including a call counterpart list corresponding to counterparts of a conference call when a direction of the terminal changes to a landscape direction during the conference call; and providing a private call with a call counterpart corresponding to a selected item when one item is selected from the call counterpart list. | 11-22-2012 |
20140056926 | COMPLEX IN WHICH ANTI-COTININE ANTIBODY IS BOUND TO CONJUGATE OF COTININE AND BINDING SUBSTANCE, AND USE THEREOF - The present invention relates to a complex in which an anti-cotinine antibody is bound to a conjugate of a binding material and cotinine, and a use of the complex. The complex according to the present invention may be used as an analysis tool in an in vitro biological assay method, and may retain the specific reactivity and the biological function of the binding material, and the capabilities of inducing complement-mediated cell cytotoxicity (CDC) and antibody-dependent cell cytotoxicity (ADCC) and a prolonged in vivo half-life, which are intrinsic characteristics of an antibody. | 02-27-2014 |
20160027703 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a method of fabricating a semiconductor device with a field effect transistor. The method may include forming a first gate electrode and a second gate electrode extending substantially parallel to each other and each crossing a PMOSFET region on a substrate and an NMOSFET region on the substrate; forming an interlayered insulating layer covering the first gate electrode and the second gate electrode; patterning the interlayered insulating layer to form a first sub contact hole on the first gate electrode, the first sub contact hole being positioned between the PMOSFET region and the NMOSFET region, when viewed in a plan view; and patterning the interlayered insulating layer to form a first gate contact hole and to expose a top surface of the second gate electrode, wherein the first sub contact hole and the first gate contact hole form a single communication hole. | 01-28-2016 |
20160056083 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device includes forming an active pattern and a gate electrode crossing the active pattern on a substrate, forming a first contact connected to the active pattern at a side of the gate electrode, forming a second contact connected to the gate electrode, and forming a third contact connected to the first contact at the side of the gate electrode. The third contact is formed using a photomask different from that used to form the first contact. A bottom surface of the third contact is disposed at a level in the device lower than the level of a top surface of the first contact. | 02-25-2016 |
20160056153 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A semiconductor device includes first and second gate structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, a third gate structure extending in the first direction and provided between the first and second gate structures, a first contact connected to the first gate structure and having a first width in the second direction, a second contact connected to the second gate structure and having a second width in the second direction, and a third contact connected to the third gate structure and having a third width in the second direction. The first, second, and third contacts may be aligned with each other in the second direction to constitute one row. The first and second widths may be greater than the third width. | 02-25-2016 |
20160086947 | SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME - According to example embodiments, a semiconductor device and a method for manufacturing the same are provided, the semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region, a first gate electrode and a second gate electrode on the PMOSFET region, a third gate electrode and a fourth gate electrode on the NMOSFET region, and a first contact and a second contact connected to the first gate electrode and the fourth gate electrode, respectively. The first to fourth gate cut electrodes define a gate cut region that passes between the first and third gate electrodes and between the second and fourth gate electrodes. A portion of each of the first and second contacts overlaps with the gate cut region when viewed from a plan view. | 03-24-2016 |