Patent application number | Description | Published |
20090327181 | BEHAVIOR BASED METHOD AND SYSTEM FOR FILTERING OUT UNFAIR RATINGS FOR TRUST MODELS - Disclosed is a behavior-based method which uses each rater's rating behaviors as the criterion to judge unfair ratings. A behavior refers to the action that a rater gives certain rating under specific context. The behavior-based method regards the rating given by a rater with abnormal behavior as an unfair rating, where abnormal behavior is recognized by comparing a rater's current behavior with his behavior history. | 12-31-2009 |
20090328138 | SYSTEM FOR CONTROLLING ACCESS TO HOSPITAL INFORMATION AND METHOD FOR CONTROLLING THE SAME - A method and system for implementing activity-oriented access control (AOAC) to hospital information is disclosed. An access request device sends user credentials attaching user attributes to an AOAC server, which in turn searches activity rules that are assigned to user attributes from an activity server and a current work situation of the user from an activity recognition server. The AOAC server transmits an access request list corresponding to the activity rules and the current work situation of the user to the access request device so that it can select a desired access request among the list. | 12-31-2009 |
20090328148 | METHOD OF TRUST MANAGEMENT IN WIRELESS SENSOR NETWORKS - The present invention relates to Group-based trust management scheme (GTMS) of wireless sensor networks. GTMS evaluates the trust of a group of sensor nodes in contrast to traditional trust management schemes that always focused on trust values of individual nodes. This approach gives us the benefit of requiring less memory to store trust records at each sensor node in the network. It uses the clustering attributes of wireless sensor networks that drastically reduce the cost associated with trust evaluation of distant nodes. Uniquely it provides not only a mechanism to detect malicious or faulty nodes, but also provides some degree of a prevention mechanism. | 12-31-2009 |
20110055553 | Method for controlling user access in sensor networks - A method for implement an energy-efficient user access control to wireless sensor networks is disclosed. A user creates a secret key and sending it to a sensor. The sensor builds a first MAC value by the secret key and sends it to the Key Distribution Center which builds a second MAC value and sending it to the sensor. The sensor decrypts the second MAC value to get a random number, and builds a third MAC value by the random number. The third MAC value is used by the user to authenticate the sensor. | 03-03-2011 |
20110077919 | METHOD OF RECOGNIZING ACTIVITY ON BASIS OF SEMI-MARKOV CONDITIONAL RANDOM FIELD MODEL - A method of recognizing an activity on the basis of a semi-Markov conditional random field (CRF) model is provided. The method includes segmenting an input signal measured by an accelerometer to output frame sequences, extracting training feature vectors from the frame sequences, building a codebook containing kernel vectors from the training feature vectors; quantizing vector sequences into discrete symbol sequences, using linear chain semi-Markov CRF model to compute the likelihood of a label given its corresponding symbol sequence. | 03-31-2011 |
20140111418 | METHOD FOR RECOGNIZING USER CONTEXT USING MULTIMODAL SENSORS - There is provided a method for recognizing a user context using multimodal sensors, and the method includes classifying accelerometer data by extracting candidates for movement feature from the accelerometer data collected from an accelerometer, selecting one or more movement features from the extracted candidates for movement feature based on relevance and redundancy thereof, and then inferring a user's movement type based on the selected movement features using a first time-series probability model; classifying audio data by extracting surrounding features from the audio data collected from an audio sensor and inferring the user's surrounding type based on the extracted surrounding features; and recognizing a user context by recognizing the user context based on either of the movement type or the surrounding type. | 04-24-2014 |
20150149191 | APPARATUS AND METHOD FOR MATCHING LARGE-SCALE BIOMEDICAL ONTOLOGIES - An ontology matching apparatus for large-scale biomedical ontologies according to the present invention is provided, and the ontology matching apparatus includes a preprocessing unit configured to classify received candidate ontologies into one or more ontology subsets to generate ontology subsets, a distribution processing unit configured to divide the generated ontology subsets by virtue of a distribution algorithm, apply a matching algorithm to the divided ontology subsets to generate matching threads, and deliver the generated matching threads to individual cores of participating nodes, and an aggregating unit configured to collect and sum matching results generated by the individual cores performing matching operations based on the matching threads to generate an ontology mapping. | 05-28-2015 |
20150149205 | INTEGRATED CLINICAL DECISION SUPPORTING SYSTEM AND METHOD - Integrated clinical decision supporting system and method are provided. The system includes a CDSS application terminal configured to consume a user's clinical information including medical data, social media data, and sensor measuring data, and transmit the collected user's clinical information, and an integrated clinical decision supporting apparatus configured to convert the user's clinical information received from the CDSS application terminal into a predetermined standard format, and generate a medical recommendation based on the converted user's clinical information and a previously stored clinical rule. | 05-28-2015 |
Patent application number | Description | Published |
20100165737 | ELECTROMECHANICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - In a memory device and a method of forming the same, in one embodiment, the memory device comprises a first word line structure on a substrate, the first word line structure extending in a first direction. A bit line is provided over the first word line structure and spaced apart from the first word line by a first gap, the bit line extending in a second direction transverse to the first direction. A second word line structure is provided over the bit line and spaced apart from the bit line by a second gap, the second word line structure extending in the first direction. The bit line is suspended between the first word line structure and the second word line structure such that the bit line deflects to be electrically coupled with a top portion of the first word line structure through the first gap in a first bent position and deflects to be electrically coupled with a bottom portion of the second word line structure through the second gap in a second bent position, and is isolated from the first word line structure and the second word line structure in a rest position. | 07-01-2010 |
20110188286 | ELECTROMECHANICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - In a memory device and a method of forming the same, in one embodiment, the memory device comprises a first word line structure on a substrate, the first word line structure extending in a first direction. A bit line is provided over the first word line structure and spaced apart from the first word line by a first gap, the bit line extending in a second direction transverse to the first direction. A second word line structure is provided over the bit line and spaced apart from the bit line by a second gap, the second word line structure extending in the first direction. The bit line is suspended between the first word line structure and the second word line structure such that the bit line deflects to be electrically coupled with a top portion of the first word line structure through the first gap in a first bent position and deflects to be electrically coupled with a bottom portion of the second word line structure through the second gap in a second bent position, and is isolated from the first word line structure and the second word line structure in a rest position. | 08-04-2011 |
Patent application number | Description | Published |
20080219048 | Multibit electro-mechanical memory device and method of manufacturing the same - A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void on the cantilever electrode. | 09-11-2008 |
20080302760 | Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same - A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening. | 12-11-2008 |
20090072296 | Multibit electro-mechanical device and method of manufacturing the same - A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line in a first direction on the substrate, a lower word line insulated from the bit line and in a second direction intersecting the first direction, a pad electrode isolated from a sidewall of the lower word line and connected to the bit line, a cantilever electrode expending in the first direction over the lower word line with a lower void therebetween, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a trap site expending in the second direction over the cantilever electrode with an upper void therebetween, and an upper word line to which a charge to curve the cantilever electrode in a direction of the trap site is applied, the upper word line on the trap site. | 03-19-2009 |
20090072297 | Multibit electro-mechanical memory device and method of manufacturing the same - A memory device comprises a cantilever electrode comprising a first portion that is supported by a pad electrode, and that extends from the pad electrode, and further comprising a second portion that arches over an upper part of the lower word line, wherein a lower void is between the second portion of the cantilever electrode and the lower word line, and wherein the second portion of the cantilever electrode, in a first position, is curved, wherein a trap site extends above the cantilever electrode, the trap site separated from the cantilever electrode by an upper void, and wherein an upper word line on the trap site receives a charge that enables the second portion of the cantilever electrode, in a second position, to be curved toward the trap site. | 03-19-2009 |
20090097315 | Multibit electro-mechanical memory device and method of manufacturing the same - A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites. | 04-16-2009 |
20090294864 | MOS FIELD EFFECT TRANSISTOR HAVING PLURALITY OF CHANNELS - A method of fabricating a MOSFET provides a plurality of nanowire-shaped channels in a self-aligned manner. According to the method, a first material layer and a semiconductor layer are sequentially formed on a semiconductor substrate. A first mask layer pattern is formed on the semiconductor layer, and recess regions are formed using the first mask layer pattern as an etch mask. A first reduced mask layer pattern is formed, and a filling material layer is formed on the surface of the substrate. A pair of second mask layer patterns are formed, and a first opening is formed. Then, the filling material layer is etched to form a second opening, the exposed first material layer is removed to expose the semiconductor layer, and a gate insulation layer and a gate electrode layer enclosing the exposed semiconductor layer are formed. | 12-03-2009 |
20110108795 | Molecular devices and methods of manufacturing the same - Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap. | 05-12-2011 |
20110230001 | MULTIBIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites. | 09-22-2011 |