Patent application number | Description | Published |
20080283821 | Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof - Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern. | 11-20-2008 |
20090181525 | Wafer structure and epitaxial growth method for growing the same - A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process. | 07-16-2009 |
20090191695 | Method of manufacturing nitride semiconductor substrate - A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved. | 07-30-2009 |
20090243040 | Micro-heater arrays and pn-junction devices having micro-heater arrays, and methods for fabricating the same - Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area. | 10-01-2009 |
20100051101 | Electrode of flexible dye-sensitized solar cell, manufacturing method thereof and flexible dye-sensitized solar cell - A flexible dye-sensitized solar cell, an electrode of a flexible dye-sensitized solar cell and a method of manufacturing the flexible dye-sensitized solar cell are disclosed. The method of manufacturing the flexible dye-sensitized solar cell in accordance with an embodiment of the present invention includes: forming a separation layer on a carrier; forming a dye-absorption layer on the separation layer; forming a carbon-nanotube layer on the dye-absorption layer; forming a cathode polymer layer on the carbon-nanotube layer, in which the cathode polymer layer is flexible; and separating the carrier by removing the separation layer. Although the high temperature annealing process associated with the dye-sensitized solar cell is required, a flexible cathode transparent electrode can be manufactured by using the carbon nanotube, because the cathode can be manufactured by using the carbon nanotube and a flexible transparent board is used. | 03-04-2010 |
20100101645 | ELECTRODE OF DYE-SENSITIZED SOLAR CELL, MANUFACTURING METHOD THEREOF AND DYE-SENSITIZED SOLAR CELL - A dye-sensitized solar cell, an electrode of the dye-sensitized solar cell, a method of manufacturing the electrode of the dye-sensitized solar cell are disclosed. The method of manufacturing the electrode of the dye-sensitized solar cell in accordance with an embodiment of the present invention includes: forming a metal transparent electrode on one surface of a transparent polymer board, in which the metal transparent electrode has holes formed therein; forming a electron transfer layer on the metal transparent electrode; and absorbing photosensitive dye into the electron transfer layer. According to the method as set forth above, a flexible solar cell can be implemented by using a flexible electrode, and another transparent electrode layer using ITO can be omitted by using the nano-patterned metal transparent electrode. Therefore, the highly efficient dye-sensitized solar cell can be implemented by the excellent conductivity of metals and the plasmon effect. | 04-29-2010 |
20100132796 | DYE COMPOUND FOR DYE-SENSITIZED SOLAR CELLS, DYE-SENSITIZED PHOTOELECTRIC CONVERTER AND DYE-SENSITIZED SOLAR CELLS - It relates to a dye compound for solar cells, a dye-sensitized photoelectric converter and dye-sensitized solar cells. The photoelectric conversion efficiency of solar cells is improved by using the dye compound for solar cells, expressed by formula 1: | 06-03-2010 |
20100141600 | TOUCH SCREEN - A touch screen is provided, in which a first layer of a transparent electrode is spaced from a second layer of a transparent electrode and a refraction index matching layer is interposed between the first and second layers of the transparent electrodes. | 06-10-2010 |
20100155767 | Light emitting device using a micro-rod and method of manufacturing a light emitting device - A light emitting device using a micro-rod and a method of manufacturing a light emitting device are provided, the method includes forming a material layer on a substrate. The material layer is patterned such that a hole is formed that exposes a surface of the substrate. A core is grown in the shape of a micro-rod on the surface of the substrate exposed through the hole. A light emitting layer is deposited on the core. A shell is grown on the light emitting layer. | 06-24-2010 |
20100219059 | KEYPAD ASSEMBLY USING OPTICAL SHUTTER AND LIGHT GUIDE PANEL AND PORTABLE TERMINAL HAVING THE SAME - A keypad assembly includes an optical shutter configured to shield or transmit light according to a voltage applied thereto; a light guide panel configured to guide an internal light generated inside of the keypad assembly and coupled to the interior of the light guide panel; and a symbol pattern layer including at least one symbol pattern illuminated by both the internal light irradiated from the light guide panel and an external light from outside of the keypad assembly that has passed through the optical shutter. | 09-02-2010 |
20110204377 | Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates - Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate. | 08-25-2011 |
20120153296 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods. | 06-21-2012 |
20120319131 | METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES - Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate. | 12-20-2012 |
20130175541 | METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER - A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature. | 07-11-2013 |
20140061587 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material. | 03-06-2014 |
20140073115 | METHOD OF MANUFACTURING LARGE AREA GALLIUM NITRIDE SUBSTRATE - A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate. | 03-13-2014 |