Patent application number | Description | Published |
20090149542 | COMPOUNDS AND COMPOSITIONS FOR TREATING NEURONAL DEATH OR NEUROLOGICAL DYSFUNCTION - The present invention relates to 2-hydroxy-alkylamino-benzoic acid derivatives and to a combination of cell necrosis inhibitor and lithium, process for the preparation of the derivatives or the combination, pharmaceutical formulation containing the derivatives or the combination, and use of the derivatives or the combination by either concomitant or sequential administration for improvement of treatment of neuronal death or neurological dysfunction. The derivatives and the combination of the present invention are useful for treating neurological diseases, such as amyotrophic lateral sclerosis (ALS, Lou Gehrig's disease), spinal muscular atrophy, Alzheimer's disease, Parkinson's disease, Huntington's disease, stroke, traumatic brain injury or spinal cord injury; and for treating ocular diseases such as glaucoma, diabetic retinopathy or macular degeneration. | 06-11-2009 |
20100295185 | Nonvolatile Memory Device and Method of Manufacturing the Same - A nonvolatile memory device comprises a semiconductor substrate comprising alternating, parallel active regions and isolation regions; first and second selection lines intersecting the active regions and the isolation regions; first junctions formed in the active regions between the first and second selection lines; spacers formed on sidewalls of the first and second selection lines; second junctions deeper than the first junctions formed in the first junctions, respectively; contact plugs coupled to one side of the respective second junctions; and dummy plugs coupled second sides of the respective second junctions. | 11-25-2010 |
20110051516 | Semiconductor Device - A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line. | 03-03-2011 |
20120294082 | Semiconductor Device - A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line. | 11-22-2012 |
20120301551 | COMPOUNDS AND COMPOSITIONS FOR TREATING NEURONAL DEATH OR NEUROLOGICAL DYSFUNCTION - The present invention relates to 2-hydroxy-alkylamino-benzoic acid derivatives and to a combination of cell necrosis inhibitor and lithium, process for the preparation of the derivatives or the combination, pharmaceutical formulation containing the derivatives or the combination, and use of the derivatives or the combination by either concomitant or sequential administration for improvement of treatment of neuronal death or neurological dysfunction. The derivatives and the combination of the present invention are useful for treating neurological diseases, such as amyotrophic lateral sclerosis (ALS, Lou Gehrig's disease), spinal muscular atrophy, Alzheimer's disease, Parkinson's disease, Huntington's disease, stroke, traumatic brain injury or spinal cord injury; and for treating ocular diseases such as glaucoma, diabetic retinopathy or macular degeneration. | 11-29-2012 |
20130154055 | CAPACITOR AND REGISTER OF SEMICONDUCTOR DEVICE, MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers. | 06-20-2013 |
20140063935 | SEMICONDUCTOR MEMORY DEVICE HAVING VERTICAL CHANNELS, MEMORY SYSTEM HAVING THE SAME, AND METHOD OF FABRICATING THE SAME - A semiconductor memory device, a memory system having the same, and a method of fabricating the same are provided. The semiconductor memory device includes a vertical channel layer protruding from a surface of a substrate, a tunnel insulating layer and a charge storage layer, which are surrounding the vertical channel layer, a blocking layer surrounding the charge storage layer, interlayer insulating layers stacked along the blocking layer, and conductive layers interposed between the interlayer insulating layers. The blocking layer includes a metal oxide layer. | 03-06-2014 |
20150050796 | CAPACITOR AND REGISTER OF SEMICONDUCTOR DEVICE, MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers. | 02-19-2015 |