Sun-Kwang
Sun-Kwang Jeong, Gyeongbuk KR
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20090039573 | DISTRIBUTOR BASE - A distributor bottom, particularly a nozzle-type distributor bottom, for steadily introducing process gas, especially process gas loaded with solid particles, into a process chamber, optionally to create a fluidized bed. The process chamber is disposed above the distributor bottom and is formed by walls of a reactor used for metallurgically, particularly thermally, treating feedstock. The distributor bottom is provided with a plurality of holes. Holes are arranged near the walls to prevent substances from attaching to the reactor walls. Special arrangements relate to nozzles and ducts. | 02-12-2009 |
Sun-Kwang Jeong, Pohang KR
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20080302212 | Method for Manufacturing Molten Irons and Apparatus for Manufacturing Molten Irons - A method for manufacturing molten iron that improves charging and discharge of the fine iron ore, and an apparatus for manufacturing molten iron using the same. The apparatus for manufacturing molten iron includes i) at least one fluidized-bed reduction reactor that reduces fine iron ore and converts the fine iron ore into reduced iron, ii) a fine iron ore charging bin that supplies the fine iron ore to the fluidized-bed reduction reactor, iii) a fine iron ore charging line that directly connects the fine iron ore charging bin to each of the fluidized-bed reduction reactors, and directly charges the fine iron ore into each of the fluidized-bed reduction reactor, iv) a melter-gasifier into which lumped carbonaceous materials and the reduced iron are charged and oxygen is injected, the melter-gasifier manufacturing molten iron, and v) a reducing gas supply line that supplies a reducing gas discharged from the melter-gasifier to the fluidized-bed reduction reactor. | 12-11-2008 |
20090008841 | Apparatus for Manufacturing Molten Irons - An apparatus for manufacturing molten iron includes i) at least one fluidized-bed reduction reactor that converts iron ore into reduced materials by reducing and plasticizing the iron ore, ii) a melter-gasifier into which the reduced materials are charged and oxygen is injected such that the melter-gasifier manufactures molten iron, and iii) a reducing gas supply line that supplies a reducing gas discharged from the melter-gasifier into the fluidized-bed reduction reactor. The fluidized-bed reduction reactor includes a gas injector that injects a gas into the fluidized-bed reduction reactor to remove stagnating layers. | 01-08-2009 |
Sun-Kwang Kim, Suwon-Si KR
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20150144952 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME - A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line. | 05-28-2015 |
Sun-Kwang Kim, Yongin-City KR
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20150243793 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes. | 08-27-2015 |