Suh, Ansan-Si
Dae Wong Suh, Ansan-Si KR
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20160030612 | MOBILE PHONE CHARGER WITH STERILIZATION ULTRAVIOLET LED - A mobile phone charger with a sterilization UV LED may include: a charger case having a space formed therein and including a mobile phone stand formed at the front surface thereof; and one or more first UV LEDs installed at one side of the space of the charger case. | 02-04-2016 |
Duck Ii Suh, Ansan-Si KR
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20140110666 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation. | 04-24-2014 |
Duk Ii Suh, Ansan-Si KR
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20140231748 | SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE - Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present. | 08-21-2014 |
20150076446 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area. | 03-19-2015 |
Ii Kyung Suh, Ansan-Si KR
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20150154917 | BACKLIGHT MODULE, METHOD FOR DRIVING SAME AND DISPLAY DEVICE USING SAME - A display device includes a power rectifying unit for rectifying alternating power, a power factor correction unit correcting the power factor of the alternating power and outputting a power factor corrected voltage containing a direct current voltage component having at least a predetermined size, a display module driven by the power factor corrected voltage, a backlight unit, and a driving unit supplying the main driving voltage to a backlight unit, receiving the power factor corrected voltage when the size of the rectified voltage is smaller than a preset threshold value to generate a supplementary driving voltage. | 06-04-2015 |
20150252960 | BACKLIGHT MODULE WITH MJT LED AND BACKLIGHT UNIT INCLUDING THE SAME - Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current. | 09-10-2015 |
20150325689 | III-V TRANSISTOR AND METHOD FOR MANUFACTURING SAME - Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region. | 11-12-2015 |
20150357518 | LIGHT EMITTING MODULE - A light emitting module includes: a substrate having a recess part formed thereon; a body surrounding some of side surfaces and an upper surface of the substrate; a light emitting diode chip positioned on the recess part of the substrate; and a lens positioned on the body, wherein the substrate includes a first step part positioned along an edge of the recess part and a second step part positioned along an edge of a lower surface thereof, and the lower surface of the substrate is exposed to the outside. | 12-10-2015 |
Il Kyung Suh, Ansan-Si KR
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20150359056 | BACKLIGHT MODULE WITH MJT LED AND BACKLIGHT UNIT INCLUDING THE SAME - Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current. | 12-10-2015 |
Tae-Weon Suh, Ansan-Si KR
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20150340397 | IMAGE SENSOR PACKAGE - Provided is an image sensor package that includes a transparent protection cover for protecting a plurality of unit pixels each including a microlens. The image sensor package includes a substrate which has a first surface and a second surface that are opposite to each other, and includes a sensor array region including a plurality of unit pixels formed in the first surface and a pad region including a pad arranged in the vicinity of the sensor array region, a plurality of microlenses formed on the plurality of unit pixels, respectively, at least two transparent material layers covering the plurality of microlenses, and a transparent protection cover attached onto the plurality of microlenses with the at least two transparent material layers interposed therebetween. | 11-26-2015 |