Patent application number | Description | Published |
20120037897 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - (1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate. | 02-16-2012 |
Patent application number | Description | Published |
20100021852 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN - A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises
| 01-28-2010 |
20100112475 | RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD - The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R | 05-06-2010 |
20100255416 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN - The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R | 10-07-2010 |
20110262859 | UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD - An upper-layer film-forming composition includes (A) a resin that is soluble in an alkaline aqueous solution, and includes a fluorine atom, and (B) a solvent component that includes (B1) a solvent having a boiling point at 101.3 kPa of 150° C. or more and a static surface tension of 23.0 mN/m or less, the upper-layer film-forming composition being used to form an upper-layer film on a photoresist film. | 10-27-2011 |
20120171613 | UPPER LAYER FILM-FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - An upper layer film-forming composition includes a resin and a solvent component. The resin is soluble in a developer. The solvent component includes first solvent which has a boiling point of 180 to 280° C. at 101.3 kPa and a vapor pressure of 0.001 to 0.1 kPa at 20° C. The upper layer film-forming composition is used to form an upper layer film on a photoresist film. | 07-05-2012 |
20130203000 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND RESIST PATTERN-FORMING METHOD - A radiation-sensitive resin composition includes a polymer component, a radiation-sensitive acid generating agent, and a nitrogen-containing compound having a ring structure. The polymer component includes, in an identical polymer or different polymers, a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). R | 08-08-2013 |
20130216961 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN - A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. | 08-22-2013 |
20140147794 | METHOD OF FORMING PHOTORESIST PATTERN - A method of forming a photoresist pattern includes providing a photoresist film on a substrate. An upper layer film is provided on the photoresist film using an upper layer film-forming composition. Radiation is applied to the upper layer film and the photoresist film through a mask having a given pattern via an immersion medium. The upper layer film and the photoresist film are developed using a developer to form a photoresist pattern. The upper layer film-forming composition includes a resin soluble in the developer and a solvent component. The solvent component includes a first solvent, a second solvent shown by a general formula (2), and a third solvent shown by a general formula (3). The first solvent is diethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol diethyl ether, γ-butyrolactone, methyl propylene diglycol, methyl propylene triglycol or a mixture thereof. | 05-29-2014 |
Patent application number | Description | Published |
20130040012 | COMPRESSION MOLDING APPARATUS AND MOLDING DIE - Disclosed are a compression molding apparatus and a molding die, whereby efficient hot-molding is performed. The compression molding apparatus performs a molding by providing a raw material into the molding die, and applying heat and pressure to the material. The apparatus is provided with: a first molding die, which forms a molding frame that surrounds a region where the raw material is compression-molded; a second molding die, which compresses the raw material provided into the molding frame; and a heat source section, which supports and heats the second molding die. The second molding die has: a first heat pipe, which has one end positioned on the heat source section side, and the other end positioned on the side of a pressing surface that presses the raw material; and a heat insulating layer, which wraps the first heat pipe along the longitudinal direction of the first heat pipe. | 02-14-2013 |
20130096228 | FRICTION MATERIAL - In accordance with the present invention, there is provided a friction material. The friction material of the present invention includes a fibrous material, a binder, and a friction modifier. The friction modifier contains an artificial graphite and an inorganic filler. The artificial graphite has an average particle diameter of 1,000 to 3,000 μm. The inorganic filler has a plurality of convex parts. | 04-18-2013 |