Su-Ock
Su-Ock Chung, Icheon-Si KR
Patent application number | Description | Published |
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20100019218 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A resistive memory device includes: a substrate, an insulation layer arranged over the substrate, a first electrode plug penetrating the insulation layer from the substrate, having a portion protruded out of an upper portion of the insulation layer, and having peaks at edges of the protruded portion, a resistive layer disposed over the insulation layer and covering the first electrode plug, and a second electrode arranged over the resistive layer. | 01-28-2010 |
20140291601 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, AND MICROPROCESSOR, PROCESSOR, SYSTEM, DATA STORAGE SYSTEM AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device includes first lines extending in a first direction; second lines extending in a second direction crossing with the first direction; and first resistance variable elements defined between the first lines and the second lines and each including a first substance layer and a second substance layer, wherein the first substance layer extends in the first direction and the second substance layer extends in the second direction. | 10-02-2014 |
Su-Ock Chung, Gyeonggi-Do KR
Patent application number | Description | Published |
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20130170281 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes a semiconductor substrate having an active area defined by an isolation layer extending in one direction, a gate line extending in another direction crossing the isolation layer through the isolation layer and the active area, a protective layer located over the gate line, a contact plug positioned in a partially removed space of the active area between the protective layers, and a variable resistance pattern coupled to a part of the contact plug. | 07-04-2013 |