Straubinger
Ben Lyle Straubinger, Camp Hill AU
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20130246630 | Dynamic web session clean-up - A “sign-off” cookie is generated and stored upon initiation of a web session between a client and a web application executing on a server. The sign-off cookie preferably comprises both an identifier for the session (a “session ID”) together with an identifier (such as a URL) for a sign-off resource (associated with a sign-off mechanism) that can be used to clean-up the web session following its termination. The sign-off cookie may be returned to the client and/or retained within a proxy. Upon termination of the web session, the URL in the sign-off cookie is used to initiate a request to the sign-off mechanism to clean-up the web session. This approach provides for dynamic web session clean-up without requiring any pre-configuration of the sign-off mechanism. | 09-19-2013 |
Frank Straubinger, Schwaebisch Gmuend DE
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20120217166 | PROCESS FOR THE ELECTROLYTIC COPPER PLATING OF ZINC DIECASTING HAVING A REDUCED TENDENCY TO BLISTER FORMATION - In the electroplating of zinc diecastings with a copper layer, the electrolyte penetrates into the pores of the zinc diecasting. When the temperature is increased later, this leads to vaporization of the electrolyte liquid in the pores and to blistering or flaking of the copper layer. It is proposed that plating be carried out in two steps. In the first step, only a thin copper layer of less than 1 μm is applied and the plated parts are then treated at a temperature which leads to vaporization of the electrolyte liquid. The thin copper layer is still sufficiently porous for the vapour to be able to escape. Only the solid constituents of the electrolyte remain. The copper layer is then thickened to a final thickness of from about 20 to 30 μm. In this plating step, electrolyte liquid no longer penetrates into the pores of the zinc diecasting. The parts which are coated in this way display no blistering or flaking of the copper layer after storage at a temperature of 150° C. | 08-30-2012 |
Franz Straubinger, Aidenbach DE
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20100156402 | POSITION ENCODER AND A METHOD FOR DETECTING THE POSITION OF A MOVABLE PART OF A MACHINE - A rotation angle detection sensor system for a rotational body is provided, which has a reduced sensitivity against an interfering magnetic field and an interfering electric field. The rotation angle detection sensor system comprises an encoder structure that is attached to the rotational body of a machine and is movable along with this rotational body. A stationary sensor assembly is positioned opposite to this encoder structure and supplies at least one sensor signal for determining the angle position. The sensor assembly includes a first inductive element, the inductance of which is dependent on the angle position of the encoder structure. | 06-24-2010 |
Hans-Jurgen Straubinger, Grasslfing DE
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20130118230 | Clocked Blowing Away of a Contaminated Gas Cloud - The disclosure relates generally to a method for testing containers for foreign substances, wherein a standard gas is blown into a container to be tested, at least a part of the test gas escaping from the container is tested by a measuring device, and the part of the test gas remaining outside the measuring device is removed from the measuring area in a clocked manner, e.g. by blowing it away or sucking it off. | 05-16-2013 |
Hans-Jurgen Straubinger, Pentling DE
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20130022504 | PLASTIC REPROCESSING WITH CONTROLLED DECONTAMINATION - A device for reprocessing used plastic containers including a system for analyzing the degree of contamination of the plastic, a system for determining decontamination process parameters as a function of the degree of contamination thus detected, and a system for controlled decontamination of the plastic according to the decontamination process parameters thus determined. The system for determining decontamination process parameters provides determined decontamination process parameters to corresponding decontamination control elements that are automatically adjusted depending on the degree of contamination. | 01-24-2013 |
Helmut Straubinger, Munich DE
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20100191320 | STENT FOR THE POSITIONING AND ANCHORING OF A VALVULAR PROSTHESIS IN AN IMPLANTATION SITE IN THE HEART OF A PATIENT - The present invention relates to a stent for the positioning and anchoring of a valvular prosthesis in an implantation site in the heart of a patient. Specifically, the present invention relates to an expandable stent for an endoprosthesis used in the treatment of a narrowing of a cardiac valve and/or a cardiac valve insufficiency. So as to ensure that no longitudinal displacement of a valvular prosthesis fastened to a stent will occur relative the stent in the implanted state of the stent, even given the peristaltic motion of the heart, the stent according to the invention comprises at least one fastening portion via which the valvular prosthesis is connectable to the stent. The stent further comprises positioning arches and retaining arches, whereby at least one positioning arch is connected to at least one retaining arch. | 07-29-2010 |
Robert Straubinger, Amherst, NY US
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20090053297 | COMPOSITIONS AND METHODS FOR LESS IMMUNOGENIC PROTEIN-LIPID COMPLEXES - The present invention provides compositions and methods for reducing the immunogenicity and increasing the circulating half-life of therapeutic proteins such as Factor VIII. The compositions comprise lipidic structures such as liposomes, micelles and cochleates comprising a negatively charged lipid and polyethylene glycol derivatized phosphatidyl ethanolamine. | 02-26-2009 |
Robert M. Straubinger, Amherst, NY US
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20100105870 | Method Of Complexing A Protein By The Use Of A Dispersed System And Proteins Thereof - The present invention relates to methods for complexing a protein in a dispersed medium. Also disclosed are associated proteins produced by the methods of complexing of the present invention. Pharmaceutically effective stabilized protein dosages are also disclosed. The present invention also relates to a method for associating AHF protein in a dispersed medium. | 04-29-2010 |
20110123625 | Compositions of Less Immunogenic and Long-Circulating Protein-Lipid Complexes - Provided are lipidic particles comprising phosphatidylcholine, phosphatidylinositol and cholesterol. Also provided are compositions comprising the lipidic particles and having associated therewith therapeutic agents such as peptides, polypeptides or proteins. In these compositions, the therapeutic agents have reduced immunogenicity and/or longer circulating time. These compositions can be used for therapeutic administration of the peptides, polypeptides and/or proteins. | 05-26-2011 |
Thomas Straubinger, Erlangen DE
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20100159182 | Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate - A method is used for producing a bulk SiC crystal having a resistivity of at least 10 | 06-24-2010 |
20100175614 | THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL - A configuration for producing a bulk SiC crystal includes a growing crucible having an electrically conductive crucible wall, an inductive heating device disposed outside the growing crucible for inductively coupling an electric current, which heats the growing crucible, into the crucible wall, and an insulation layer disposed between the crucible wall and the inductive heating device. The insulation layer is formed of a graphite insulation material having short carbon fibers with a fiber length in a range of between 1 mm and 10 mm and a fiber diameter in a range of between 0.1 mm and 1 mm. A method for producing a bulk SiC crystal is also provided. | 07-15-2010 |
20100255305 | PRODUCTION METHOD FOR A LOW-DISLOCATION BULK ALN SINGLE CRYSTAL AND LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE - A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows in a growth direction oriented parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction, a free space being provided between the AlN seed crystal and the growing bulk AlN single crystal on the one hand, and the lateral crucible inner wall on the other hand. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are therefore obtained with only few dislocations, which furthermore are substantially distributed homogeneously. The growing crucible, inside which the crystal growth region is located, is an inner growing crucible which is arranged in an outer growing crucible. The two growing crucibles are provided with a crucible lid with a gap formed between the inner growing crucible and the crucible lid through which some of the AlN growth gas phase generated inside the crystal growth region escapes and is deposited on a crucible bottom of the outer growing crucible which lies opposite the crucible lid. | 10-07-2010 |
20110086213 | METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE - A silicon carbide bulk single crystal is produced at a growth temperature of up to 2200° C. by sublimation growth and is subjected to thermal aftertreatment after the sublimation growth. The bulk single crystal is brought to an aftertreatment temperature that is higher than a growth temperature. Very low-stress and low-dislocation SiC substrates can be produced from such a SiC bulk single crystal, the substrates additionally having a particularly low electrical resistivity. The SiC bulk single crystal is positioned within an SiC powder before the thermal aftertreatment and it is completely surrounded by the SiC powder during the thermal aftertreatment. | 04-14-2011 |
20110300323 | PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION - A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region. | 12-08-2011 |
20120308759 | LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE - A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction. A free space is formed between the AlN crystals and the lateral crucible inner wall. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are obtained with only few dislocations, which are substantially distributed homogeneously. Growing crucibles are provided with a crucible lid with a gap formed between an inner growing crucible and the crucible lid through which some of the AlN growth gas phase generated inside the crystal growth region escapes and is deposited on a bottom of an outer growing crucible opposite the lid. | 12-06-2012 |
Thomas Straubinger, Mohrendorf DE
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20130171402 | PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A HOMOGENEOUS LATTICE PLANE COURSE - A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal. | 07-04-2013 |
20130171403 | PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE - A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis. | 07-04-2013 |
Thomas Ludwig Straubinger, Mohrendorf DE
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20130305983 | Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing - The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane. | 11-21-2013 |