Patent application number | Description | Published |
20080268566 | Method For Re-Crystallization Of Layer Structures By Means Of Zone Melting, A Device For This Purpose And Use Thereof - The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers. | 10-30-2008 |
20080289690 | Process For Producing a Silicon Film on a Substrate Surface By Vapor Deposition - The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase. | 11-27-2008 |
20080317956 | Device and Method for Continuous Chemical Vapour Deposition Under Atmospheric Pressure and Use Thereof - The invention relates to a device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior. | 12-25-2008 |
20090197049 | METHOD FOR DRY CHEMICAL TREATMENT OF SUBSTRATES AND ALSO USE THEREOF - The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a heated reaction chamber with a gas which contains hydrogen chloride as etching agent, and also to a substrate which can be produced in this way. The invention likewise relates to uses of the previously mentioned method. | 08-06-2009 |
20100206371 | REFLECTIVELY COATED SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCTION AND USE THEREOF - The invention relates to a reflectively coated semiconductor component which has a semiconductor layer, a functional layer which substantially comprises silicon and carbon, and at least one further layer which substantially comprises silicon and carbon. This further layer functions as reflector for light incident upon the semiconductor component. The invention also relates to a method for the production of semiconductor components of this type. Semiconductor components are used in particular as solar cells or as components of sensors or optical filters. | 08-19-2010 |
20100213166 | Process and Device for The Precision-Processing Of Substrates by Means of a Laser Coupled Into a Liquid Stream, And Use of Same - The invention relates to a method for precision processing of substrates in which a liquid jet which is directed towards a substrate surface and contains a processing reagent is guided over the regions of the substrate to be processed, a laser beam being coupled into the liquid jet. Likewise, a device which is suitable for implementation of the method is described. The method is used for different process steps in the production of solar cells. | 08-26-2010 |
20100319768 | THIN-FILM SOLAR CELL AND PROCESS FOR ITS MANUFACTURE - The present invention refers to a thin-film solar cell which is contacted from the rear-side. The invention is based on a combination of thin-film solar cells, e.g. wafer equivalents, with the emitter wrap-through (EWT) technology. The present invention also provides a process for manufacturing these solar cells. | 12-23-2010 |
20110018102 | Method for Simultaneous Recrystallization and Doping of Semiconductor Layers and Semiconductor Layer Systems Produced According to this Method - A method for simultaneous recrystallisation and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer | 01-27-2011 |
20110240109 | TANDEM SOLAR CELL MADE OF CRYSTALLINE SILICON AND CRYSTALLINE SILICON CARBIDE AND METHOD FOR PRODUCTION THEREOF - The invention describes photovoltaic tandem solar cells made of crystalline silicon and crystalline silicon carbide having an Si/C intermediate layer. Furthermore, the invention describes a method for the production of tandem solar cells. | 10-06-2011 |
20130276900 | GAS LOCK, AND COATING APPARATUS COMPRISING A GAS LOCK - The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention. | 10-24-2013 |
20130291949 | GAS LOCK, AND COATING APPARATUS COMPRISING A GAS LOCK - The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention. | 11-07-2013 |
20130316095 | RETAINING DEVICE FOR SUBSTRATES AND METHOD FOR COATING A SUBSTRATE - The invention relates to a retaining device for substrates to be coated, which device comprises a contact surface for the substrate to be coated. The retaining device is for example configured as a plate on which the substrate rests and which has one or more apertures, e.g. drilled holes, grooves etc. has, through which a pressure gradient can be set between the face of the substrate and the opposite face of the retaining device. In this way a temporary fixing of the substrate by suction onto the retaining device is possible. The invention also relates to a method for coating a substrate which uses the retaining device according to the invention. | 11-28-2013 |
20140212583 | METHOD AND DEVICE FOR CONTINUOUSLY COATING SUBSTRATES - The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates. | 07-31-2014 |
20150037500 | Device And Method For Continuous Chemical Vapour Deposition Under Atmospheric Pressure And Use Thereof - A device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior. | 02-05-2015 |