Patent application number | Description | Published |
20100032623 | Method for producing a garnet phosphor - A method for producing a garnet phosphor that includes using cryolites as the flux. In particular YAG:Ce is suitable as the garnet. | 02-11-2010 |
20120018673 | Garnet Material, Method for its Manufacturing and Radiation-Emitting Component Comprising the Garnet Material - A material, comprising a garnet having the composition represented by the formula A | 01-26-2012 |
20120146078 | High Efficiency Conversion LED - A conversion LED with a chip which emits primary blue radiation, and a layer containing luminescent substance upstream of the chip which converts at least part of the primary radiation of the chip into secondary radiation, wherein a first garnet A3B5O12:Ce yellow-green emitting luminescent substance and a second nitride silicate M2X5Y8:D orange-red emitting luminescent substance is used, wherein the peak wavelength of the primary radiation is in the range of 430 to 450 nm, in particular of up to 445 nm, while the first luminescent substance is a garnet with the cation A=Lu or a mixture of Lu, Y with up a Y fraction of up to 30%, and wherein B has fractions of both Al and Ga, while the second luminescent substance is a nitride silicate which contains both Ba and Sr as cation M, and in which the doping consists of Eu, wherein the second luminescent substance contains 35 to 75 mol.-% Ba for the component M, remainder is Sr, where X=Si and Y=N. | 06-14-2012 |
20120146079 | Conversion LED with High Color Rendition Index - A conversion LED comprising a chip which emits primary radiation and, positioned upstream of the chip, a luminescent substance-containing layer which converts at least some of the primary radiation of the chip into secondary radiation, wherein a first yellow-green emitting luminescent substance of the A3B5O12:Ce garnet type and a second orange-red emitting luminescent substance of the MAlSiN3:Eu calsine type is used, wherein the peak wavelength of the primary radiation lies in the 435 to 455 nm range, the first luminescent substance being a garnet having essentially the cation A=Lu or Lu in combination with Y, and B simultaneously having fractions of Al and Ga, while the second luminescent substance is of the basic MAlSiN3:Eu type containing Ca as M with a fraction of at least 80%, in particular at least 90%, preferably at least 95%, where M is Ca alone or predominantly Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, and wherein some of the Al up to 20%, preferably at most 5%, can be replaced by B, O, F, Cl, alone or in combination. | 06-14-2012 |
20130188334 | LIGHT SYSTEM WITH INCREASED EFFICIENCY - A light system based on at least two chips, in particular LEDs containing chips, wherein a means for at least partially converting the radiation of a first chip is provided, wherein a layer containing a phosphor as conversion means is mounted in front of a first chip intended for the conversion, which phosphor-containing layer convers at least some of the primary radiation of the first chip into secondary radiation, wherein the second chip emits radiation with a greater wavelength than the first chip, wherein the layer is arranged spaced apart from the first chip, wherein the second chip is arranged in such a way that its radiation is substantially not absorbed by the phosphor. | 07-25-2013 |
20130207148 | RADIATION-EMITTING COMPONENT WITH A CONVERTER MATERIAL, WITH A THERMALLY CONDUCTIVE CONTACT AND METHOD FOR THE PRODUCTION THEREOF - A radiation-emitting component includes:
| 08-15-2013 |
20140233213 | LED LIGHT SYSTEM WITH VARIOUS LUMINESCENT MATERIALS - An LED light system may include a primary LED radiation source, in particular at least one blue- or UV-emitting semiconductor element, wherein a first dome of transparent or translucent material, which acts as a conversion element, is placed in front of the primary light source in the emission direction, wherein at least a part of the surface of the first dome is divided into at least two regions of different types, which comprise luminescent materials, the at least two regions including different luminescent materials for the conversion. | 08-21-2014 |
20140284649 | OPTOELECTRONIC COMPONENT AND PHOSPHORS - An optoelectronic component includes a layer sequence having an active region that emits primary electromagnetic radiation, wherein the primary electromagnetic radiation has a wavelength of 430 nm to 470 nm, a conversion material arranged in a beam path of the primary electromagnetic radiation and at least partly converts the primary electromagnetic radiation into a secondary electromagnetic radiation, wherein the conversion material includes a first phosphor having general composition A | 09-25-2014 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 01-15-2015 |