Patent application number | Description | Published |
20110089046 | PROCESS FOR THE ELECTROCHEMICAL CLEAVAGE OF LIGNIN AT A DIAMOND ELECTRODE - The invention relates to a process for the electrochemical cleavage of lignin by means of a diamond electrode and also to a process for producing vanillin and derivatives thereof by electrochemical cleavage of lignin in a solution having a pH≦11. | 04-21-2011 |
20110147228 | PROCESS FOR THE ANODIC DEHYDRODIMERIZATION OF SUBSTITUTED PHENOLS - The invention relates to a process for preparing biaryl alcohols, in which anodic dehydrodimerization of substituted phenols is carried out in the presence of partially fluorinated and/or periluorinated mediators and a supporting electrolyte at a graphite electrode. | 06-23-2011 |
20110207968 | PROCESS FOR PREPARING 4-ISOPROPYLCYCLOHEXYLMETHANOL - The present invention relates to a process for preparing 4-isopropylcyclohexylmethanol (IPCHM) from para-cymene. The process for preparing 4-isopropylcyclohexylmethanol (IPCHM) comprises an electrochemical process for preparing a mixture of 4-isopropylbenzaldehyde dimethyl acetal and 4-(1-alkoxy-1-methylethyl)benzaldehyde dimethyl acetal, and intermediates passed through in the process, a hydrolysis step to form the corresponding benzaldehydes and a hydrogenation of this mixture to form 4-isopropylcyclohexylmethanol (IPCHM). | 08-25-2011 |
20110237484 | ELECTROCHEMICAL TEXTILE-WASHING PROCESS - The present invention relates to a washing machine comprising an electrochemical cell, to a process for electrochemical cleaning of fibers, to laundry detergents for electrochemical cleaning of fibers and to the fibers thus cleaned. | 09-29-2011 |
20120016162 | ELECTROCHEMICAL METHOD FOR PRODUCING 3-TERT-BUTYLBENZALDEHYDE DIMETHYL ACETAL - The present invention relates to 3-tert-butylbenzaldehyde dimethyl acetal and to 3-tert-butylbenzyl methyl ether and to an electrochemical method for producing 3-tert-butyl-benzaldehyde dimethyl acetal and intermediates passed through in said method. | 01-19-2012 |
20120064414 | PRODUCING SOLVENT MIXTURES HAVING A LOW WATER CONTENT - A process for producing a solvent mixture comprising
| 03-15-2012 |
20120067736 | PROCESS FOR PREPARING UNSYMMETRICAL BIARYL ALCOHOLS - The invention relates to a process for preparing unsymmetrical biaryl by anodic dehydrodimerization of substituted ortho-alkoxyaryl alcohols in the presence of partially fluorinated and/or perfluorinated mediators and a supporting electrolyte. | 03-22-2012 |
20120071696 | PROCESS FOR PREPARING 2-METHYL-3-(4-TERT-BUTYLPHENYL)PROPANAL WITH HIGH PARA-ISOMER PURITY - The present invention relates to a process for preparing 2-methyl-3-(4-tert-butyl-phenyl)propanal with high para-isomer purity, and also to a process for preparing 4-tert-butylbenzaldehyde with high para-isomer purity. | 03-22-2012 |
20120080320 | PROCESS FOR THE ANODIC CROSS-DEHYDRODIMERIZATION OF ARENES - The invention relates to a process for preparing biaryls by anodic cross-dehydrodimerization of substituted phenols with arenes in the presence of partially fluorinated and/or perfluorinated mediators and a supporting electrolyte. | 04-05-2012 |
20130040031 | METHOD FOR PRODUCING VANILLIN BY ELECTROCHEMICAL OXIDATION OF AQUEOUS LIGNIN SOLUTIONS OR SUSPENSIONS - The present invention relates to a method for producing vanillin, which comprises an electrochemical oxidation of an aqueous, lignin-comprising suspension or solution at an anode, wherein the anode used is a silver electrode. | 02-14-2013 |
20130053582 | PROCESS FOR THE ELECTROCHEMICAL PREPARATION OF GAMMA-HYDROXYCARBOXYLIC ESTERS AND GAMMA-LACTONES - γ-Hydroxycarboxylic esters and γ-lactones which are suitable as flavors can be prepared by electrochemical reductive cross-coupling of α,β-unsaturated esters with carbonyl compounds in an undivided electrolysis cell having a cathode composed of lead, lead alloys, cadmium, cadmium alloys, mercury, steel, glassy carbon or boron-doped diamonds and a basic aqueous electrolyte comprising an electrolyte salt which suppresses the cathodic formation of hydrogen. | 02-28-2013 |
20130056364 | METHOD FOR THE BLEACHING OF KITCHENWARE IN A DISHWASHER - The invention provides a method for bleaching kitchenware in a dishwasher, comprising the step of the in situ activation of a bleach activator by means of a reactive oxygen species, where the reactive oxygen species is generated in situ in the dishwasher by electrolysis of an aqueous solution. | 03-07-2013 |
20140034508 | Process for the preparation of vanillin - The present invention relates to a process for preparing vanillin, comprising an electrolysis of an aqueous, alkaline lignin-comprising suspension or solution, wherein, as anode material, a base alloy is used which is selected among Co-base alloys, Fe-base alloys, Cu-base alloys and Ni-base alloys. | 02-06-2014 |
20140046099 | Process for producing vanillin from vanillin-comprising compositions - The present invention relates to a process for producing vanillin from an aqueous, basic vanillin-comprising composition, in particular from a composition as arises in the oxidation, especially in the oxidation by electrolysis, of aqueous alkaline lignin-comprising compositions, comprising at least one treatment of an aqueous, basic vanillin-comprising composition, in particular the treatment of a composition as arises in the oxidation, especially in the oxidation by electrolysis, of aqueous alkaline lignin-comprising compositions, with a basic adsorbent, in particular an anion exchanger. | 02-13-2014 |
20140100376 | PROCESS FOR THE ELECTROCHEMICAL PREPARATION OF GAMMA-HYDROXYCARBOXYLIC ESTERS AND GAMMA-LACTONES - γ-Hydroxycarboxylic esters and γ-lactones which are suitable as flavors can be prepared by electrochemical reductive cross-coupling of α,β-unsaturated esters with carbonyl compounds in an undivided electrolysis cell having a cathode composed of lead, lead alloys, cadmium, cadmium alloys, mercury, steel, glassy carbon or boron-doped diamonds and a basic aqueous electrolyte comprising an electrolyte salt which suppresses the cathodic formation of hydrogen. | 04-10-2014 |
20140346057 | ELECTROCHEMICAL TEXTILE-WASHING PROCESS - The present invention relates to a washing machine comprising an electrochemical cell, to a process for electrochemical cleaning of fibers, to laundry detergents for electrochemical cleaning of fibers and to the fibers thus cleaned. | 11-27-2014 |
Patent application number | Description | Published |
20150068310 | SENSOR WITH OBLIQUE-ANGLE DISPLAY - A sensor comprises a detector defining a zone axis and adapted to receive a signal from within a zone around the zone axis and to generate an electrical signal, and a display module defining a display plane and adapted to display a pattern in the display plane based on the electrical signal, the display being oriented along an axis forming an angle with the zone axis such that the pattern is visible both from a direction parallel to the zone axis and from a direction perpendicular to the zone axis. In certain examples, the angle is about 45°, 40°-50°, 35°-55° or 25°-65°. | 03-12-2015 |
20150098087 | OBJECT SENSING USING DYNAMIC DEMODULATION - An object detection method comprises transmitting a plurality of signals from a transmitter into a region; measuring a plurality of signals, each corresponding to a respective one of the plurality of the transmitted signals, received by a sensor; determining whether each of the plurality of received signals satisfies a condition (such as that a received signal is above a threshold level for indicating that an object is located in the region, or below a threshold level for indicating that an object is not located in the region); determining whether noise of at least a threshold amount is present; and determining whether an object is located within the region depending on whether at least a number of received signals meet the condition, the number being different when noise of at least a threshold amount is determined to be present than not present. For example, the required number of received signals that meet the condition when noise is present can be higher than when noise is absent. A device for detecting object according to the method is also disclosed. | 04-09-2015 |
20150192675 | OBJECT SENSING USING DYNAMIC THRESHOLD HYSTERESIS - A method and device for object detection are disclosed. In one aspect, a method comprises transmitting a plurality of signals into a region; measuring a noise level during a noise measurement time interval corresponding to each respective one of the plurality of transmitted signals; generating a threshold signal dependent on the noise level; and comparing a first plurality of signals received by a sensor, each of the received signals corresponding to a respective one of the plurality of the transmitted signals, with the respective threshold signal. In another aspect, a device comprising components adapted to carry out the steps of object detection is disclosed. In one example, a thresholding circuit is adapted to generate a threshold signal have a level corresponding to substantially a peak-to-peak level of the measured noise level. | 07-09-2015 |
Patent application number | Description | Published |
20140054560 | Bottom and Top Gate Organic Transistors with Fluropolymer Banked Crystallization Well - A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes. | 02-27-2014 |
20140290513 | Printed Ink Structure using Fluoropolymer Template - A method is provided for controlling printed ink horizontal. cross-sectional areas using fluoropolymer templates. The method initially forms a fluoropolymer template overlying a substrate. The fluoropolymer template has a horizontal first cross-sectional dimension. Then, a primary ink is printed overlying the fluoropolymer template having a horizontal second cross-sectional dimension less than the first cross-sectional dimension. In the case of a fluoropolymer line having a template length greater than a template width, where the template width is the first cross-sectional dimension, printing the primary ink entails printing a primary ink line having an ink length greater than an ink width, where the ink width is the second cross-sectional dimension. In one aspect, the method prints a plurality of primary ink layers, each primary ink layer having an ink width less than the template width. Each overlying primary ink layer can be printed prior to solvents in underlying primary ink layers evaporating. | 10-02-2014 |
20140332760 | Organic Semiconductor Transistor with Epoxy-Based Organic Resin Planarization Layer - A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided. | 11-13-2014 |
Patent application number | Description | Published |
20120146002 | Organic Semiconductor Interface Preparation - A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H | 06-14-2012 |
20120181512 | Organic Transistor with Fluropolymer Banked Crystallization Well - A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes. | 07-19-2012 |
20130260536 | Controlling Printed Ink Line Widths using Fluoropolymer Templates - A method is provided for controlling printed ink horizontal cross-sectional areas using fluoropolymer templates. The method initially forms a fluoropolymer template overlying a substrate. The fluoropolymer template has a horizontal first cross-sectional dimension. Then, a primary ink is printed overlying the fluoropolymer template having a horizontal second cross-sectional dimension less than the first cross-sectional dimension. In the case of a fluoropolymer line having a template length greater than a template width, where the template width is the first cross-sectional dimension, printing the primary ink entails printing a primary ink line having an ink length greater than an ink width, where the ink width is the second cross-sectional dimension. In one aspect, the method prints a plurality of primary ink layers, each primary ink layer having an ink width less than the template width. Each overlying primary ink layer can be printed prior to solvents in underlying primary ink layers evaporating. | 10-03-2013 |
20140158399 | Electrohydrodynamic (EHD) Printing for the Defect Repair of Contact Printed Circuits - A method is provided for repairing defects in a contact printed circuit. The method provides a substrate with a contact printed circuit formed on a substrate top surface. After detecting a discontinuity in a printed circuit feature, a bias voltage is applying to at least one of a first region of the printed circuit feature or a second region of the printed circuit feature. The bias voltage may also be applied to both the first and second regions. An electric field is formed between the bias voltage and an ink delivery nozzle having a voltage potential less than the bias voltage. Conductive ink is attracted into the electric field from the ink delivery nozzle. Conductive is printed ink on the discontinuity, forming a conductive printed bridge. Typically, the ink delivery nozzle is an electrohydrodynamic (EHD) printing nozzle. | 06-12-2014 |
20140183457 | Transistor with Organic Semiconductor Interface - A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H | 07-03-2014 |
Patent application number | Description | Published |
20110061591 | ELECTRON BEAM LAYER MANUFACTURING - A process and apparatus for free form fabrication of a three-dimensional work piece comprising (a) feeding raw material in a solid state to a first predetermined location; (b) depositing the raw material onto a substrate as a molten pool deposit under a first processing condition; (c) monitoring the molten pool deposit for a preselected condition; (d) comparing information about the preselected condition of the monitored molten pool deposit with a predetermined desired value for the preselected condition of the monitored molten pool deposit; (e) solidifying the molten pool deposit; (f) automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step (d); and repeating steps (a) through (f) at one or more second locations for building up layer by layer a three-dimensional work piece. The apparatus is characterized by a detector that monitors a preselected condition of the deposited material and a closed loop electronic control device for controlling operation of one or more components of the apparatus in response to a detected condition by the detector. | 03-17-2011 |
20110114839 | ELECTRON BEAM LAYER MANUFACTURING USING SCANNING ELECTRON MONITORED CLOSED LOOP CONTROL - A process (and apparatus for performing the process) for layer manufacturing a three-dimensional work piece comprising the steps of; feeding raw material in a solid state to a first predetermined location; exposing the raw material to an electron beam to liquefy the raw material; depositing the raw material onto a substrate as a molten pool deposit, the deposit having a forward edge region in an x-y plane with a forward edge region width and a trailing edge region in the x-y plane with a trailing edge region width, under at least one first processing condition; monitoring the molten pool deposit for at least one preselected condition using detecting of scatter from a scanning electron beam contemporaneously with the depositing step; solidifying the molten pool deposit; automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step; and repeating steps at one or more second locations for building up layer by layer, generally along a z-axis that is orthogonal to the x-y plane, a three-dimensional work piece. | 05-19-2011 |
20110240607 | RASTER METHODOLOGY, APPARATUS AND SYSTEM FOR ELECTRON BEAM LAYER MANUFACTURING USING CLOSED LOOP CONTROL - A method for layer-by-layer manufacturing of a three-dimensional metallic work piece, comprising the steps of: delivering a metallic feed material in a substantially solid state into a feed region; emitting an electron beam having one or more predetermined electrical currents; translating the electron beam through a first predetermined raster pattern frame in an x-y plane that includes: a plurality of points within the feed region sufficient so that the metallic feed material is subjected to a melting beam power density level sufficient to cause melting of the metallic feed material and formation of a molten pool deposit; and a plurality of points in a substrate region that is outside of the feed region, sufficient so that the plurality of points outside the feed region is subjected to a substrate beam power density level that is different from (e.g., lower than) the melting beam power density level; monitoring a condition of one or both of the feed region or the substrate region substantially in real time for the occurrence of any deviation from a predetermined condition; upon detecting of any deviation, translating the electron beam through at least one second predetermined raster pattern frame in the x-y plane that maintains the melting beam power density level substantially the same as the first predetermined raster pattern frame, but alters the substrate beam power density level in a manner so that the monitored condition returns to the predetermined condition; and repeating the above steps at one or more second locations for building up layer by layer, generally along a z-axis that is orthogonal to the x-y plane, a three-dimensional layered metallic work piece. The teachings herein also contemplate an apparatus that includes an electronic control device that performs any of the methods herein, as well as articles made according to such methods. | 10-06-2011 |
20140014629 | ELECTRON BEAM LAYER MANUFACTURING - A process and apparatus for free form fabrication of a three-dimensional work piece comprising (a) feeding raw material in a solid state to a first predetermined location; (b) depositing the raw material onto a substrate as a molten pool deposit under a first processing condition; (c) monitoring the molten pool deposit for a preselected condition; (d) comparing information about the preselected condition of the monitored molten pool deposit with a predetermined desired value for the preselected condition of the monitored molten pool deposit; (e) solidifying the molten pool deposit; (f) automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step (d); and repeating steps (a) through (f) at one or more second locations for building up layer by layer a three-dimensional work piece. The apparatus is characterized by a detector that monitors a preselected condition of the deposited material and a closed loop electronic control device for controlling operation of one or more components of the apparatus in response to a detected condition by the detector. | 01-16-2014 |
20140061167 | ELECTRON BEAM LAYER MANUFACTURING USING SCANNING ELECTRON MONITORED CLOSED LOOP CONTROL - A process (and apparatus for performing the process) for layer manufacturing a three-dimensional work piece comprising the steps of: feeding raw material in a solid state to a first predetermined location; exposing the raw material to an electron beam to liquefy the raw material; depositing the raw material onto a substrate as a molten pool deposit, the deposit having a forward edge region in an x-y plane with a forward edge region width and a trailing edge region in the x-y plane with a trailing edge region width, under at least one first processing condition; monitoring the molten pool deposit for at least one preselected condition using detecting of scatter from a scanning electron beam contemporaneously with the depositing step; solidifying the molten pool deposit; automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step; and repeating steps at one or more second locations for building up layer by layer, generally along a z-axis that is orthogonal to the x-y plane, a three-dimensional work piece. | 03-06-2014 |
20140158667 | RASTER METHODOLOGY, APPARATUS AND SYSTEM FOR ELECTRON BEAM LAYER MANUFACTURING USING CLOSED LOOP CONTROL - A method for layer-by-layer manufacturing of a three-dimensional work piece, including: (a) delivering a metallic feed material into a feed region; (b) emitting an electron beam; (c) translating the electron beam through a first predetermined raster pattern frame that includes: (i) a plurality of points within the feed region; and (ii) a plurality of points in a substrate region that is outside of the feed region; (d) monitoring a condition of the feed region or the substrate region for the occurrence of any deviation from a predetermined condition; (e) upon detecting of any deviation, translating the electron beam through at least one second predetermined raster pattern frame that maintains the melting beam power density level substantially the same, but alters the substrate beam power density level; and (f) repeating steps (a) through (e) at one or more second locations for building up layer-by-layer. | 06-12-2014 |