Patent application number | Description | Published |
20080289254 | METHOD AND APPARATUS FOR A COAL GASIFIER - A method and apparatus for efficiently forming a gaseous material from a solid starting material. The produced gaseous material includes a CGE HHV having a high percentage of an original HHV of the starting material. The gaseous product may be used to form a plurality of materials for various purposes. | 11-27-2008 |
20100119419 | TWO PHASE INJECTOR FOR FLUIDIZED BED REACTOR - A fluidized-bed reactor for producing hydrogen from methane by steam reforming includes a flow splitter that splits a dense-phase flow of a gas having entrained calcium oxide particles into a plurality of equal flow streams. The reactor also incorporates an orifice plate having at least one high-velocity, rocket-style impinging injector for injecting reactants into the reactor bed. The injector includes a central orifice extending perpendicularly through the plate, and one or more adjacent peripheral orifices that extend through the plate at such an angle that respective streams of reactants injected into the reactor bed through the peripheral orifices impinge on a stream of reactants injected vertically into the reactor bed through the central orifice. The injector cooperates with adjacent base-bleed orifices in the plate to provide a uniform distribution and rapid mixing of the calcium oxide particles with a steam/methane gas mixture across the entire bottom of the reactor bed. | 05-13-2010 |
20110057060 | BIOMASS TORREFACTION MILL - A biomass torrefaction system includes a mill which receives a raw biomass feedstock and operates at temperatures above 400 F (204 C) to generate a dusty flue gas which contains a milled biomass product. | 03-10-2011 |
20120036775 | MODULAR TIP INJECTION DEVICES AND METHOD OF ASSEMBLING SAME - A method of assembling an injection device for use in a reactor injector feed assembly includes coupling a plurality of substantially concentric conduits to a modular tip. The method also includes coupling a first conduit of the reactor injector feed assembly to a modular tip and coupling a second conduit of the reactor injector feed assembly to the modular tip. The modular tip includes a first substantially annular nozzle and a second substantially annular nozzle defined therein. The first conduit and the first substantially annular nozzle are centered about an injection device centerline. | 02-16-2012 |
20120036776 | METHOD AND APPARATUS FOR ASSEMBLING INJECTION DEVICES - A method of assembling a gasification reactor includes extending an injection device at least partially into the gasification reactor. The injection device includes a plurality of substantially concentric conduits coupled to a modular tip and at least one outer surface. The modular tip includes a plurality of cooling channels and a plurality of substantially annular nozzles defined therein. The method further includes forming at least one layer of insulation about at least a portion of the at least one outer surface to facilitate insulating at least a portion of the injection device from heat within the gasification reactor. | 02-16-2012 |
20120037732 | ANNULAR INJECTOR ASSEMBLY AND METHODS OF ASSEMBLING THE SAME - An annular injector is described. The injector includes a first bayonet assembly and a second bayonet assembly each including a terminal end and a tip end. The second bayonet assembly is configured to be concentrically coupled at least partially about the first bayonet assembly. An outer diameter of the first bayonet assembly and an inner diameter of the second bayonet assembly vary at the tip end to define a first substantially annular nozzle. The first bayonet assembly includes a maximum outer diameter that is greater than a minimum inner diameter of the second bayonet assembly and at least a portion of at least one of the first bayonet assembly and the second bayonet assembly extends from the tip end to the terminal end. The injector includes a third bayonet assembly configured to be concentrically coupled at least partially about the second bayonet assembly to define a second substantially annular nozzle. | 02-16-2012 |
20120039761 | APPARATUS FOR REMOVING HEAT FROM INJECTION DEVICES AND METHOD OF ASSEMBLING SAME - A method of assembling an injection device for use in a reactor injector feed assembly includes extending the injection device at least partially into a cavity. The injection device includes a plurality of substantially concentric conduits coupled to a modular tip that includes a plurality of cooling channels and a plurality of substantially annular nozzles defined therein. The method also includes coupling at least one coolant distribution device in flow communication with the plurality of cooling channels to facilitate removing heat from an outer surface of the injection device. | 02-16-2012 |
20120267576 | GASIFIER INJECTOR - A method for gasifying a carbonaceous material includes supplying a main slurry flow to a main cavity of a two-stage slurry splitter, dividing the main slurry flow into secondary slurry flows that flow into secondary cavities extending from the main cavity at distal ends of first stage flow dividers, dividing each secondary slurry flow into tertiary slurry flows that flow into slurry injection tubes extending from each secondary cavity at distal ends or second stage flow dividers, injecting the tertiary slurry flows into a gasification chamber coupled to the injector module, impinging annular shaped sprays of a reactant onto corresponding ones of the tertiary slurry flows within the gasification chamber using annular impinging orifices in a face plate of the injector module, and cooling the face plate to withstand high temperatures and abrasion. | 10-25-2012 |
20130014439 | AGGLOMERATOR WITH CERAMIC MATRIX COMPOSITE OBSTACLESAANM Sprouse; Kenneth M.AACI NorthridgeAAST CAAACO USAAGP Sprouse; Kenneth M. Northridge CA USAANM Matthews; David R.AACI Simi ValleyAAST CAAACO USAAGP Matthews; David R. Simi Valley CA US - A slag agglomerator includes an inlet, an outlet and a plurality of obstacles. The inlet receives a flow of gas and slag droplets and the outlet allows the flow of gas and slag droplets to exit the agglomerator. The obstacles are oblique or perpendicular to the flow of gas and slag droplets and have an exterior surface containing a ceramic matrix composite. | 01-17-2013 |
20140124604 | ANNULAR INJECTOR ASSEMBLY AND METHODS OF ASSEMBLING SAME - An annular injector is described. The injector includes a first bayonet assembly and a second bayonet assembly each including a terminal end and a tip end. The second bayonet assembly is configured to be concentrically coupled at least partially about the first bayonet assembly. An outer diameter of the first bayonet assembly and an inner diameter of the second bayonet assembly vary at the tip end to define a first substantially annular nozzle. The first bayonet assembly includes a maximum outer diameter that is greater than a minimum inner diameter of the second bayonet assembly and at least a portion of at least one of the first bayonet assembly and the second bayonet assembly extends from the tip end to the terminal end. The injector includes a third bayonet assembly configured to be concentrically coupled at least partially about the second bayonet assembly to define a second substantially annular nozzle. | 05-08-2014 |
20140157666 | APPARATUS FOR REMOVING HEAT FROM INJECTION DEVICES AND METHOD OF ASSEMBLING SAME - A method of assembling an injection device for use in a reactor injector feed assembly includes extending the injection device at least partially into a cavity. The injection device includes a plurality of substantially concentric conduits coupled to a modular tip that includes a plurality of cooling channels and a plurality of substantially annular nozzles defined therein. The method also includes coupling at least one coolant distribution device in flow communication with the plurality of cooling channels to facilitate removing heat from an outer surface of the injection device. | 06-12-2014 |
20140294695 | INJECTOR MIXER FOR A COMPACT GASIFICATION REACTOR SYSTEM - An injector mixer for a gasification reactor system that utilizes reactants includes an injector body that extends between a first face and a second face. The injector body includes a first passage that extends between the first face and the second face and has a first central axis. At least one second, impinging passage extends between the first face and second face and has an associated second central axis that has an angle with the first axis. The angle satisfies mixing efficiency Equation (I) disclosed herein. | 10-02-2014 |
Patent application number | Description | Published |
20090165294 | LOW PROFILE WIRE BONDED USB DEVICE - A low profile USB flash memory device, and methods of forming same, are disclosed. The USB flash memory device includes an integrated circuit memory portion and a USB connector. The memory portion and the USB connector may be integrally formed on the same substrate. The USB flash memory device includes a substrate on which is mounted one or more flash memory die, a controller die, passive components and an LED for indicating when the memory is being accessed. In contrast to prior art USB memory devices which used TSOP packages mounted on a printed circuit board, the semiconductor die of the present invention are affixed to the substrate and wire bonded in a SIP configuration. Omitting the encapsulated TSOP packages allows a reduction in the overall thickness of the USB flash memory device. | 07-02-2009 |
20090210637 | PROVIDING DEVICE PARAMETERS - A non-volatile storage device has first and second controllers that provide external access to non-volatile memory using different protocols. In response to a request from the first controller, the second controller retrieves parameters from the non-volatile memory and provides the retrieved parameters to the first controller. In one embodiment, the device parameters are USB descriptors, which may include a vendor ID, a product ID, a product string, and/or a serial number. The first controller may be a Universal Serial Bus (USB) card reader controller. Examples of the second controller include a Secure Digital (SD) controller, a CompactFlash (CF) controller, a MemoryStick controller, or a different type of controller that is able to provide external access to the non-volatile memory. The first controller provides the device parameters to a host during enumeration of the non-volatile storage device. The device parameters may be used to establish settings for the first controller. | 08-20-2009 |
20090307389 | SWITCHABLE ACCESS STATES FOR NON-VOLATILE STORAGE DEVICES - Techniques for switching access states for accessing non-volatile are disclosed. A plurality of non-volatile memory portions can be effectively presented as: (a) a single logical unit in a first access state (“single unit access state”) and (b) as multiple logical units in a second access state (“multi-unit access state”). An access switching system can be provided for a device that includes a plurality of non-volatile storage portions. As a result, the device can be operable to effectively switch between the first and second access states. In the first access state, the plurality of non-volatile storage portions can be effectively presented as a single logical unit for access by another device, thereby allowing the other device to effectively access the plurality of non-volatile storage portions from a single access point. However, the device can also be operable to switch to a second access state in which the plurality of the non-volatile storage portions can be effectively presented to the other device as multiple logical units, thereby allowing the other device to access the plurality of non-volatile storage portions individually by using multiple access points respectively associated with the multiple logical units presented to the other device. | 12-10-2009 |
20110010484 | OPTIMIZED PAGE PROGRAMMING ORDER FOR NON-VOLATILE MEMORY - During a programming data transfer process in a non-volatile storage system, recording units of data are transferred from a host to a memory device, such as a memory card. For each recording unit, pages of data are arranged in an order such that a page which takes longer to write to a memory array of the memory device is provided before a page which takes less time to write. Overall programming time for the recording unit is reduced since a greater degree of parallel processing occurs. While the page which takes longer to program is being programmed to the memory array, the page which takes less time to program is being transferred to the memory device. After programming is completed, the memory device signals the host to transfer a next recording unit. The pages of data may include lower, middle and upper pages. | 01-13-2011 |
20110153911 | METHOD AND SYSTEM FOR ACHIEVING DIE PARALLELISM THROUGH BLOCK INTERLEAVING - A method and system for achieving die parallelism through block interleaving includes non-volatile memory having a multiple non-volatile memory dies, where each die has a cache storage area and a main storage area. A controller is configured to receive data and write sequentially addressed data to the cache storage area of a first die. The controller, after writing sequentially addressed data to the cache storage area of the first die equal to a block of the main storage area of the first die, writes additional data to a cache storage area of a next die until sequentially addressed data is written into the cache area of the next die equal to a block of the main storage area. The cache storage area may be copied to the main storage area on the first die while the cache storage area is written to on the next die. | 06-23-2011 |
20110153913 | Non-Volatile Memory with Multi-Gear Control Using On-Chip Folding of Data - A memory system and methods of its operation are presented. The memory system includes a controller and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. The memory system receives data from the host and performs a binary write operation of the received data to the first section of the non-volatile memory circuit. The memory system subsequently folds portions of the data from the first section of the non-volatile memory to the second section of the non-volatile memory, wherein a folding operation includes reading the portions of the data from the first section rewriting it into the second section of the non-volatile memory using a multi-state programming operation. The controller determines to operate the memory system according to one of multiple modes. The modes include a first mode, where the binary write operations to the first section of the memory are interleaved with folding operations at a first rate, and a second mode, where the number of folding operations relative to the number of the binary write operations to the first section of the memory are performed at a higher than in the first mode. The memory system then operates according to determined mode. The memory system may also include a third mode, where folding operations are background operations executed when the memory system is not receiving data from the host. | 06-23-2011 |
20110296122 | METHOD AND SYSTEM FOR BINARY CACHE CLEANUP - A system and method for clearing data from a cache in a storage device is disclosed. The method may include analyzing the cache for the least recently fragmented logical group, and evicting the entries from the least recently fragmented logical group. Or, the method may also include analyzing compaction history and selecting entries for eviction based on the analysis of the compaction history. The method may also include scheduling of different eviction mechanisms during various operations of the storage device. The system may include a cache storage, a main storage and a controller configured to evict entries associated with a least recently fragmented logical group, configured to evict entries based on analysis of compaction history, or configured to schedule different eviction mechanisms during various operations of the storage device. | 12-01-2011 |
20120005405 | Pre-Emptive Garbage Collection of Memory Blocks - A method and system pre-emptively perform garbage collection operations of a forced amount on update blocks in a memory device. The amount of garbage collection needed by a certain data write is monitored and adjusted to match the forced amount if necessary. Update blocks may be selected on the basis of their recent usage or the amount of garbage collection required. Another method and system may store control information about update blocks in a temporary storage area so that a greater number of update blocks are utilized. The sequential write performance measured by the Speed Class test may be optimized by using this method and system. | 01-05-2012 |
20120005406 | Garbage Collection of Memory Blocks Using Volatile Memory - A method and system for performing garbage collection operations on update blocks in a memory device using volatile memory is disclosed. When performing a garbage collection operation, a first part of the data related to the garbage collection operation is written to a volatile memory in the memory device, and a second part of the data related to the garbage collection operation is written to a non-volatile memory in the memory device. The first part of the data that is written to the volatile memory (such as a random access memory) may comprise control information (such as mapping information of the logical addressable unit to a physical metablock). The second part of the data related to the garbage collection that is written to the non-volatile memory (such as a flash memory) may comprise the consolidated data in the update block. | 01-05-2012 |
20120297140 | EXPANDABLE DATA CACHE - A method and system for cache management in a storage device is disclosed. A portion of unused memory in the storage device is used for temporary data cache so that two levels of cache may be used (such as a permanent data cache and a temporary data cache). The storage device may manage the temporary data cache in order to maintain clean entries in the temporary data cache. In this way, the storage area associated with the temporary data cache may be immediately reclaimed and retasked for a different purpose without the need for extraneous copy operations. | 11-22-2012 |
20130070530 | HIGH ENDURANCE NON-VOLATILE STORAGE - A non-volatile storage system is disclosed that includes non-volatile memory cells designed for high endurance and lower retention than other non-volatile memory cells. | 03-21-2013 |
20130170293 | HYBRID MULTI-LEVEL CELL PROGRAMMING SEQUENCES - A memory device implements hybrid programming sequences for writing data to multiple level cells (MLCs). The memory device obtains specified data to write to the MLC and selects among multiple different programming techniques to write the specified data. Each of the programming techniques establishes a charge configuration in the MLC that represents multiple data bits. The memory device writes the specified data to the MLC using the selected programming technique. In one implementation, the programming techniques include a robust programming technique that preserves previously written data in the MLC in the event of a write abort of the specified data and an additional programming technique that has higher average performance than the robust programming technique. The selection may be made based on a wide variety of criteria, including whether data has been previously written to a block that includes the MLC. | 07-04-2013 |
20130173844 | SLC-MLC Wear Balancing - A method and system for SLC-MLC Wear Balancing in a flash memory device is disclosed. The flash memory device includes a single level cell (SLC) portion and a multi-level cell (MLC) portion. The age of the SLC portion and the MLC portion may differ, leading potentially to one portion wearing out before the other. In order to avoid this, a controller is configured to receive an age indicator from one or both of the SLC portion and the MLC portion, determine, based on the age indicator, whether to modify operation of the SLC portion and/or the MLC portion, and in response to determining to modifying operation, modify the operation of the at least one of the SLC portion or the MLC portion. The modification of the operation may thus balance wear between the SLC and MLC portions, thereby potentially extending the life of the flash memory device. | 07-04-2013 |
20130173847 | Metablock Size Reduction Using on Chip Page Swapping Between Planes - Methods and systems are disclosed herein for storing data in a memory device. Data for multiple pages is written in parallel using plane interleaving. For example, in a four plane write, a first set of four pages are written in the following sequence: 0, 1, 2, 3. A second set of four pages, after plane interleaving, are written in the following sequent: 7, 4, 5, 6. After writing the data, the pages of written data are read, page swapped if necessary, and then written into another portion of memory (such as MLC). | 07-04-2013 |
20130173874 | System and Method for Pre-interleaving Sequential Data - A method and system for operating a memory device in programming mode is disclosed. The memory device includes a programming mode and a normal mode. The memory device in programming mode increases the number of physical planes that can be programmed in parallel than can be programmed in normal mode. In this way, the memory device may be programmed more quickly at various times of operation of the memory device (such as during manufacturing). The host system may send rearranged data to the memory device in programming mode with the rearranged data accounting for the increased number of physical planes programmed in parallel. | 07-04-2013 |
20140173172 | SYSTEM AND METHOD TO UPDATE READ VOLTAGES IN A NON-VOLATILE MEMORY IN RESPONSE TO TRACKING DATA - A method includes reading a representation of tracking data from at least a portion of a non-volatile memory. The method further includes adjusting a read voltage based on a comparison between a number of bits in tracking data as compared to a count of bits in the representation of the tracking data. | 06-19-2014 |
20140173382 | INSPECTION OF NON-VOLATILE MEMORY FOR DISTURB EFFECTS - A method performed in a data storage device including a non-volatile memory includes reading a representation of data, the representation corresponding to one or more selected states of storage elements of a group of storage elements of the non-volatile memory. The method includes, in response to a count of errors in the representation of the data exceeding a threshold, scheduling a remedial action to be performed on the group of storage elements. | 06-19-2014 |
20140281685 | PROBABILITY-BASED REMEDIAL ACTION FOR READ DISTURB EFFECTS - A method may be performed in a data storage device that includes a memory including a three-dimensional (3D) memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line. | 09-18-2014 |
20140281766 | PROBABILITY-BASED REMEDIAL ACTION FOR READ DISTURB EFFECTS - A method may be performed in a data storage device that includes a memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line. | 09-18-2014 |
20150071008 | Systems And Methods For Read Disturb Management In Non-Volatile Memory - Non-volatile memory and methods of reading non-volatile memory are provided for managing and reducing read related disturb. Techniques are introduced to reduce read disturb using state-dependent read pass voltages for particular word lines during a read operation. Because of their proximity to a selected word line, adjacent word lines can be biased using state-dependent pass voltages while other unselected word lines are biased using a standard or second set of pass voltages. Generally, each state-dependent pass voltage applied to a word line adjacent to the selected word line is larger than the second set of pass voltages applied to other unselected word lines, although this is not required. Other word lines, may also be biased using state-dependent pass voltages. System-level techniques are provided with or independently of state-dependent pass voltages to further reduce and manage read disturb. Techniques may account for data validity and memory write and erase cycles. | 03-12-2015 |
20150089324 | METHOD AND DEVICE FOR WRITE ABORT PROTECTION - A data storage device includes a non-volatile memory and a controller. A method includes receiving first data and second data from a host device. A first error-correcting code (ECC) codeword associated with the first data is written to a first word line of the non-volatile memory, and a second ECC codeword associated with the second data is written to a second word line of the non-volatile memory. The first ECC codeword includes a first bit and a second bit, and the second ECC codeword includes a third bit and a fourth bit. The method further includes writing parity information to a parity storage portion of the non-volatile memory that is distinct from the first word line and from the second word line. The parity information includes a parity bit that is based on the first bit, the second bit, the third bit, and the fourth bit. | 03-26-2015 |
20150089325 | METHOD AND DEVICE FOR WRITE ABORT PROTECTION - A data storage device includes a non-volatile memory that includes a three-dimensional (3D) memory. A method includes receiving first data and second data from a host device. A first error-correcting code (ECC) codeword associated with the first data is written to a first word line of the non-volatile memory, and a second ECC codeword associated with the second data is written to a second word line of the non-volatile memory. The first ECC codeword includes a first bit and a second bit, and the second ECC codeword includes a third bit and a fourth bit. The method further includes writing parity information to a parity storage portion of the non-volatile memory that is distinct from the first word line and from the second word line. The parity information includes a parity bit that is based on the first bit, the second bit, the third bit, and the fourth bit. | 03-26-2015 |
Patent application number | Description | Published |
20080238564 | METHOD FOR ENABLING AN OSCILLATOR CIRCUIT USING TRANSITION DETECTION - An oscillator circuit may be used with controller circuits that are designed to operate with crystals, with no modifications to the pinout or firmware of the controller circuit. In some embodiments, the oscillator circuit includes an enable input that is responsive to low-amplitude transitions, which may be coupled to and driven by the crystal output signal of the controller circuit. When transitions are present on the crystal output signal, the oscillator circuit enables its clock output signal. When the controller circuit disables its crystal output signal, the oscillator circuit no longer detects transitions on the crystal output signal coupled to the oscillator circuit enable input, and disables the clock output signal. | 10-02-2008 |
20080238565 | OSCILLATOR CIRCUIT WITH TRANSITION DETECTION ENABLE - An oscillator circuit may be used with controller circuits that are designed to operate with crystals, with no modifications to the pinout or firmware of the controller circuit. In some embodiments, the oscillator circuit includes an enable input that is responsive to low-amplitude transitions, which may be coupled to and driven by the crystal output signal of the controller circuit. When transitions are present on the crystal output signal, the oscillator circuit enables its clock output signal. When the controller circuit disables its crystal output signal, the oscillator circuit no longer detects transitions on the crystal output signal coupled to the oscillator circuit enable input, and disables the clock output signal. | 10-02-2008 |
20090040842 | Enhanced write abort mechanism for non-volatile memory - In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a “low-voltage” signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the “low-voltage” signal is deasserted and to suspend writing data while the “low-voltage” signal is asserted. In response to assertion of the “low-voltage” signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the “low-voltage” signal. | 02-12-2009 |
20090040843 | Enhanced write abort mechanism for non-volatile memory - In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a “low-voltage” signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the “low-voltage” signal is deasserted and to suspend writing data while the “low-voltage” signal is asserted. In response to assertion of the “low-voltage” signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the “low-voltage” signal. | 02-12-2009 |
20090080249 | Non-volatile memory cell endurance using data encoding - A method and apparatus for storing an n-bit (for n>=2) data block in an array of non-volatile memory cells utilizes a predetermined n+k-bit (for k>=1) encoding selected to reduce the number of programmed cells required to store the n-bit data block. | 03-26-2009 |
20090085221 | Multi-host interface controller with USB PHY/analog functions integrated in a single package - In a first embodiment, an apparatus and a method of fabrication thereof includes a substrate, a controller formed on a first integrated circuit (IC) die and disposed on the substrate, a second IC die embodying circuitry configured to enable communication between the controller and an external device, first I/O pads disposed on the first IC die, second I/O pads disposed on the second IC die, wire bonding interconnections coupling at least one of the first I/O pads with at least one of the second I/O pads, and a memory array formed on a third IC die and configured to enable communication with the controller. In a second embodiment the memory array is alternatively integrated into the first IC die. | 04-02-2009 |
20100161927 | Method for Using a CAPTCHA Challenge to Protect a Removable Mobile Flash Memory Storage Device - The embodiments described herein generally use a challenge to protect a removable mobile flash memory storage device, where the challenge may be in the form of a “Completely Automated Public Turing Test to Tell Computers and Humans Apart” (“CAPTCHA”). In one embodiment, a method is provided in which a removable mobile flash memory storage device receives a command from a host device, generates a CAPTCHA challenge, provides the CAPTCHA challenge to the host device, receives a response to the CAPTCHA challenge from the host device, determines if the response satisfies the CAPTCHA challenge, and performs the command only if the response satisfies the CAPTCHA challenge. In another embodiment, a removable mobile flash memory storage device is provided for performing these acts. | 06-24-2010 |
20110153912 | Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory - A method of operating a memory system is presented. The memory system includes a controller and a non-volatile memory circuit, where the non-volatile memory circuit has a first portion, where data is stored in a binary format, and a second portion, where data is stored in a multi-state format. The controller manages the transfer of data to and from the memory system and the storage of data on the non-volatile memory circuit. The method includes receiving a first set of data and storing this first set of data in a first location in the second portion of the non-volatile memory circuit. The memory system subsequently receives updated data for a first subset of the first data set. The updated data is stored in a second location in the first portion of the non-volatile memory circuit, where the controller maintains a logical correspondence between the second location and the first subset of the first set of data. | 06-23-2011 |
20110161560 | ERASE COMMAND CACHING TO IMPROVE ERASE PERFORMANCE ON FLASH MEMORY - Systems and methods are disclosed to reduce the number of partial logical groups that are erased by writing erase patterns to memory in a non-volatile memory system. When a non-aligned erase command is received, the logical addresses of data associated with the erase command may be marked as erased. If the logical group corresponds to the size of a physical metablock, the controller may also issue a physical erase command for complete logical groups within the erase command. For those parts of the erase command that encompass only partial logical groups, the ranges of the logical block addresses marked for erasure are stored. As subsequent erase commands are received the address ranges of the erase commands are added to the previously stored address ranges. When a set of erase commands spans an entire logical group, the logical group is marked for physical erasure in its entirety. | 06-30-2011 |
20120297118 | FAST TRANSLATION INDICATOR TO REDUCE SECONDARY ADDRESS TABLE CHECKS IN A MEMORY DEVICE - A system and method for reducing the need to check both a secondary address table and a primary address table for logical to physical translation tasks is disclosed. The method may include generating a fast translation indicator, such as a logical group bitmap, indicating whether there is an entry in the secondary address table that contains desired information pertaining to a particular logical address. Upon a host request relating to the particular logical address, the storage device may check the bitmap to determine if retrieval and parsing of the secondary table is necessary. The system may include a storage device having RAM cache storage, flash storage and a controller configured to generate and maintain at least one fast translation indicator to reduce the need to check both secondary and primary address tables during logical to physical address translation operations of the storage device. | 11-22-2012 |
20120297121 | Non-Volatile Memory and Method with Small Logical Groups Distributed Among Active SLC and MLC Memory Partitions - A non-volatile memory organized into flash erasable blocks receives data from host writes by first staging into logical groups before writing into the blocks. Each logical group contains data from a predefined set of order logical addresses and has a fixed size smaller than a block. The totality of logical groups are obtained by partitioning a logical address space of the host into non-overlapping sub-ranges of ordered logical addresses, each logical group having a predetermined size within a range delimited by a minimum size of at least one page and a maximum size of fitting at least two logical groups in a block and up to an order of magnitude higher than a typical size of a host write. In this way, excessive garbage collection due to operating a large logical group is avoided while the address space is reduced to minimize the size of a caching RAM. | 11-22-2012 |
20120297122 | Non-Volatile Memory and Method Having Block Management with Hot/Cold Data Sorting - A non-volatile memory organized into flash erasable blocks sorts units of data according to a temperature assigned to each unit of data, where a higher temperature indicates a higher probability that the unit of data will suffer subsequent rewrites due to garbage collection operations. The units of data either come from a host write or from a relocation operation. The data are sorted either for storing into different storage portions, such as SLC and MLC, or into different operating streams, depending on their temperatures. This allows data of similar temperature to be dealt with in a manner appropriate for its temperature in order to minimize rewrites. Examples of a unit of data include a logical group and a block. | 11-22-2012 |
20120320679 | SYSTEM AND METHOD FOR MINIMIZING WRITE AMPLIFICATION WHILE MAINTAINING SEQUENTIAL PERFORMANCE USING LOGICAL GROUP STRIPPING IN A MULTI-BANK SYSTEM - A system and method for reducing write amplification while maintaining a desired level of sequential read and write performance is disclosed. A controller in a multi-bank flash storage device may receive host data for writing to the plurality of flash memory banks. The controller may organize the received data in multi-page logical groups greater than a physical page and less than a physical block and interleave writes of the host data to the memory banks with that striping factor. A buffer RAM is associated with each bank of the multi-bank memory where the buffer RAM is sized as equal to or greater than the size of the multi-page logical group. | 12-20-2012 |
20130279248 | Data Retention in Nonvolatile Memory with Multiple Data Storage Formats - In a nonvolatile memory that stores data in two or more different data storage formats, such as binary and MLC, a separation scheme is used to distribute blocks containing data in one data storage format (e.g. binary) so that they are separated by at least some minimum number of blocks using another data storage format (e.g. MLC). | 10-24-2013 |
20130282958 | Obsolete Block Management for Data Retention in Nonvolatile Memory - In a nonvolatile memory array, blocks that contain only obsolete data are modified by adding charge to their cells, increasing the charge level from the programmed charge levels that represented obsolete data to elevated charge levels. The increase in overall charge in such blocks lessens the tendency of such blocks to impact data retention in neighboring blocks. | 10-24-2013 |
20130346805 | FLASH MEMORY WITH TARGETED READ SCRUB ALGORITHM - A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation. | 12-26-2013 |
20140115230 | Flash Memory with Data Retention Partition - A NAND flash memory chip includes a first partition that has smaller memory cells, with smaller charge storage elements, and a second partition that has larger memory cells, with larger charge storage elements, in the same memory array. Data is selected for storage in the first or second partition according to characteristics, or expected characteristics, of the data. | 04-24-2014 |
20140133228 | Key-Value Addressed Storage Drive Using NAND Flash Based Content Addressable Memory - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. | 05-15-2014 |
20140133233 | CAM NAND with OR Function and Full Chip Search Capability - Various techniques for extending the capabilities of CAM NAND type memories are discussed. Multi-block or even full chip search operations can be performed. In addition to the inherent AND property of NAND strings, the memory array has an inherent OR property between NAND string from different blocks along the same bit line that can be exploited through multi-block CAM-type operations. To reduce data-dependent word line to word line effects, in multiple data dependent sensing operations, the sensing can be broken up into sub-operations that avoid data dependent values on adjacent word lines. To improve data protection, subsequent to writing a memory block with indices, the word lines are read back and compared bit-by-bit with their intended values and the results are accumulated to determine whether any of indices include error. A bloom filter can also be used as an initial check during data search operations in order to provide increased data protection. | 05-15-2014 |
20140133237 | On-Device Data Analytics Using NAND Flash Based Intelligent Memory - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. The system can be applied to perform a wide range of analytics on data sets loaded into the NAND array. | 05-15-2014 |
20140136756 | NAND Flash Based Content Addressable Memory - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. | 05-15-2014 |
20140136757 | NAND Flash Based Content Addressable Memory - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. | 05-15-2014 |
20140136758 | Key Value Addressed Storage Drive Using NAND Flash Based Content Addressable Memory - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. | 05-15-2014 |
20140136759 | DE-DUPLICATION TECHNIQUES USING NAND FLASH BASED CONTENT ADDRESSABLE MEMORY - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. This arrangement can be applied to de-duplication: for data sets stored in a primary data storage section, corresponding data keys can be generated and store in search NAND. A received key, rather from external to the system or internally generated, can then be compared against the search NAND. The system can be applied to both in-line and off-line de-duplication. | 05-15-2014 |
20140136760 | DE-DUPLICATION SYSTEM USING NAND FLASH BASED CONTENT ADDRESSABLE MEMORY - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. This arrangement can be applied to de-duplication: for data sets stored in a primary data storage section, corresponding data keys can be generated and store in search NAND. A received key, rather from external to the system or internally generated, can then be compared against the search NAND. The system can be applied to both in-line and off-line de-duplication. | 05-15-2014 |
20140136761 | ARCHITECTURES FOR DATA ANALYTICS USING COMPUTATIONAL NAND MEMORY - A data analytic system allows for analytic operations be moved from a server on to a solid state drive (SSD) type analytic system, where a CAM NAND structure can be used in the analytic operations. The server can run a software using database language can issue command to the analytic system. On the data analytic system (that can interface with common, existing database language), the software commands are translated into firmware language and broken down into multiple small tasks. The small tasks are executed on the SSD flash controllers or on NAND flash according to the task specifications. The mid-product from the NAND flash or the SSD controllers can be merged within each SSD blade and also further merged on the top server level. | 05-15-2014 |
20140136762 | DATA SEARCH USING BLOOM FILTERS AND NAND BASED CONTENT ADDRESSABLE MEMORY - A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. This arrangement can be applied to data search operations using bloom filters stored along bit lines of search matrix, where the search matrix can extend across large numbers of arrays. In the example of an internet search, the bloom filters are formed from key words associated with a website are stored along bit lines of the matrix and corresponding URLs are stored in primary storage. In response to search word based query, any matching URLs are returned. | 05-15-2014 |
20140136763 | CAM NAND with OR Function and Full Chip Search Capability - Various techniques for extending the capabilities of CAM NAND type memories are discussed. Multi-block or even full chip search operations can be performed. In addition to the inherent AND property of NAND strings, the memory array has an inherent OR property between NAND string from different blocks along the same bit line that can be exploited through multi-block CAM-type operations. To reduce data-dependent word line to word line effects, in multiple data dependent sensing operations, the sensing can be broken up into sub-operations that avoid data dependent values on adjacent word lines. To improve data protection, subsequent to writing a memory block with indices, the word lines are read back and compared bit-by-bit with their intended values and the results are accumulated to determine whether any of indices include error. A bloom filter can also be used as an initial check during data search operations in order to provide increased data protection. | 05-15-2014 |
20140136764 | USE OF BLOOM FILTER AND IMPROVED PROGRAM ALGORITHM FOR INCREASED DATA PROTECTION IN CAM NAND MEMORY - Various techniques for extending the capabilities of CAM NAND type memories are discussed. Multi-block or even full chip search operations can be performed. In addition to the inherent AND property of NAND strings, the memory array has an inherent OR property between NAND string from different blocks along the same bit line that can be exploited through multi-block CAM-type operations. To reduce data-dependent word line to word line effects, in multiple data dependent sensing operations, the sensing can be broken up into sub-operations that avoid data dependent values on adjacent word lines. To improve data protection, subsequent to writing a memory block with indices, the word lines are read back and compared bit-by-bit with their intended values and the results are accumulated to determine whether any of indices include error. A bloom filter can also be used as an initial check during data search operations in order to provide increased data protection. | 05-15-2014 |
20140146609 | Weighted Read Scrub For Nonvolatile Memory - In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is scrubbed according to a scheme which weights particular data that is exposed to potentially damaging voltages. Data that may cause damage to other data is moved to a location where such potential damage is reduced. | 05-29-2014 |
20140281132 | METHOD AND SYSTEM FOR RAM CACHE COALESCING - A system and method for coalescing data fragments in a volatile memory such as RAM cache is disclosed. The method may include storing multiple data fragments in volatile memory and initiating a single write operation to flash memory only when a predetermined number of data fragments have been received and aggregated into a single flash write command. The method may also include generating a binary cache index delta that aggregates in a single entry all of the binary cache index information for the aggregated data fragments. A memory system having a non-volatile memory, a volatile memory sized to at least store a number of data fragments equal to a physical page managed in a binary cache of the non-volatile memory, and a controller is disclosed. The controller may be configured to execute the method of coalescing data fragments into a single flash write operation described above. | 09-18-2014 |
20150082120 | Selective In-Situ Retouching of Data in Nonvolatile Memory - In a charge-storage memory array, memory cells that are programmed to a particular threshold voltage range and have subsequently lost charge have their threshold voltages restored by selectively adding charge to the memory cells. Adding charge only to memory cells with high threshold voltage ranges may sufficiently increase threshold voltages of other memory cells so that they do not require separate addition of charge. | 03-19-2015 |