Patent application number | Description | Published |
20100047882 | METHOD OF RECOVERING L-THREONINE FROM L-THREONINE FERMENTATION BROTH USING NONSOLVENT - Provided are a method of recovering L-threonine from the fermentation broth of an L-threonine producing microorganism, comprising: separating microbial bodies from the L-threonine containing fermentation broth obtained by culturing an L-threonine producing microorganism and filtering the separated fermentation broth to obtain a filtrate; concentrating the filtrate; and reacting the concentrated filtrate with a nonsolvent to obtain crystalline L-threonine, crystalline L-threonine recovered by the method, and a feed additive containing the crystalline L-threonine recovered by the method. | 02-25-2010 |
20100225631 | FLAT PANEL DISPLAY DEVICE AND SOURCE DRIVER CIRCUIT FOR PERFORMING MUTIPLE DRIVING OPERATIONS WITHIN A UNIT SOURCING PERIOD - A flat panel display device and a source driver circuit for the flat panel display device are provided for performing multiple driving operations within a unit sourcing period. In the flat panel display device, multiple driving operations are performed within the unit sourcing period, and source voltages are supplied to a selected number of data lines in each driving operation. In this case, one DAC is driven to generate source voltages for a plurality of data lines. In the flat panel display device, the number of the DACs is reduced and the overall layout area is greatly reduced. Also, standby power consumption can be greatly reduced due to the reduced number of amplifiers. Since the source voltages provided by the same amplifier are provided to adjacent data lines, a metal layer can be easily wired in the display panel. | 09-09-2010 |
20110273103 | LED LAMP WITH ADJUSTABLE ILLUMINATION INTENSITY BASED ON AC VOLTAGE AMPLITUDE - An LED lamp with adjustable illumination intensity is disclosed. The LED lamp comprises an illumination block having first, second, and third illumination modules, and first and second switches. The first, second, and third illumination modules are coupled in series between a rectification voltage node and a third connection node. The first switch selectively connects a first connection node shared by the first and second illumination modules to a basis voltage node. The second switch selectively connects a second connection node shared by the second and third illumination modules to the basis voltage node. The third connection node is coupled to the basis voltage node. A control block provides the first and second control signals respectively controlling the first and second switches, wherein the logic states of the first and second control signals are based on the amplitude of a driving voltage measured between the rectification and basis voltage nodes. | 11-10-2011 |
20120178966 | METHODS FOR PRODUCTION OF L-METHIONINE AND RELATED PRODUCTS - A method comprising: (a) enzymatically processing an O-acetylhomoserine (OAHS) fermentation liquor to produce L-methionine and an acetate source; (b) separating at least a portion of said L-methionine from at least a fraction of said acetate source to form separated L-methionine and a residual liquor comprising an acetate-source; and (c) recovering at least a portion of said acetate source from said residual liquor as recovered acetate. | 07-12-2012 |
20140213824 | METHOD FOR SEPARATING AND PURIFYING 1,4-DIAMINOBUTANE FROM FERMENTED SOLUTION - The present invention relates to a method for separating and purifying 1,4-diaminobutane at high purity and high yield from a fermented solution comprising 1,4-diaminobutane, through cell mass removement, desalination, concentration, impurities removal, and recovery. Also, provided is a method for separating and purifying 1,4-diaminobutane at high purity and high yield from a fermented solution 1,4-diaminobutane, through cell mass removement, desalination, low-temperature concentration, crystallization, filtration, high-temperature concentration and distillation. | 07-31-2014 |
20160108445 | METHODS FOR PRODUCTION OF L-METHIONINE AND RELATED PRODUCTS - A method comprising: (a) enzymatically processing an O-acetylhomoserine (OAHS) fermentation liquor to produce L-methionine and an acetate source; (b) separating at least a portion of said L-methionine from at least a fraction of said acetate source to form separated L-methionine and a residual liquor comprising an acetate-source; and (c) recovering at least a portion of said acetate source from said residual liquor as recovered acetate. | 04-21-2016 |
Patent application number | Description | Published |
20100012915 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge | 01-21-2010 |
20100108977 | NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME - A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device. | 05-06-2010 |
20110049592 | NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region. | 03-03-2011 |
20110272661 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced. | 11-10-2011 |
20120007158 | NON-VOLATILE MEMORY TRANSISTOR HAVING DOUBLE GATE STRUCTURE - Provided is a non-volatile memory transistor having a double gate structure, including a first gate electrode formed on a substrate and to which an operating voltage is applied, a first gate insulating layer formed on the first gate electrode, source and drain electrodes formed on the first gate insulating layer at predetermined intervals, a channel layer formed on the first gate insulating layer between the source and drain electrodes, a second gate insulating layer formed on the channel layer, and a second gate electrode formed on the second gate insulating layer and connected to the first gate electrode such that the operating voltage is applied thereto. Accordingly, a turn-on voltage of the memory transistor can be easily controlled. | 01-12-2012 |
20120225500 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-06-2012 |
20120235961 | FLEXIBLE FLAT CABLE AND MANUFACTURING METHOD THEREOF - A flexible flat cable capable of minimizing distortion and interference of a signal and a manufacturing method thereof are provided. The cable includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer. | 09-20-2012 |
20130092415 | CABLE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS FOR DEPOSITING DIELECTRIC LAYER - The inventive concept provides cables, methods of manufacturing the same, and apparatuses for depositing a dielectric layer. The cable may include a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes and including a polymer having xylene as a monomer. | 04-18-2013 |
20140011297 | NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region. | 01-09-2014 |
20140062838 | MOBILE E-BINDER SYSTEM - Provided is a mobile e-binder system including at least one display configured to display data, a docking system electrically connected to the at least one display to exchange the data using a standardized communication protocol, and a computing device configured to store and process the data and send the data to the at least one display. The at least one display may be configured to be attachable and detachable to the docking system. | 03-06-2014 |
20140063124 | ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME - Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes. | 03-06-2014 |
20140076610 | PLANARIZING PRINTED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a method for manufacturing a planarizing printed electronic device and a planarizing printed electronic device manufactured by using the same by simply implementing a large-area embedded printed electronic device by coupling a printing process such as inkjet printing and gravure printing and a transferring process using a laminating device and particularly, solving defects due to large surface roughness and a thickness of a printed layer included in the printed electronic device, when manufacturing an embedded printed electronic device where a printed layer is embedded in a substrate. | 03-20-2014 |
20140077297 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided is a thin film transistor. The thin film transistor according to an embodiment of the present invention may include a source electrode and a drain electrode buried in a first flexible substrate, a semiconductor layer disposed on the first flexible substrate to be positioned between the source electrode and the drain electrode, a gate insulating layer completely cover the semiconductor layer, and a gate electrode facing the semiconductor layer on the gate insulating layer. | 03-20-2014 |
20140085840 | ELECTRONIC CIRCUIT AND METHOD OF FABRICATING THE SAME - Provided is an electronic circuit including a substrate having a flat device region and a curved interconnection region. A conduction line may extend along an uneven portion in the interconnection region and may be curved. The uneven portion and the conductive line may have a wavy shape. An external force applied to the electronic circuit may be absorbed by the uneven portion and the conductive line. The electronic device may not be affected by the external force. Therefore, functions of the electronic circuit may be maintained. A method of fabricating an electronic circuit according to the present invention may easily adjust areas and positions of the interconnection region and the device region. | 03-27-2014 |
20140104793 | STRETCHABLE ELECTRONIC DEVICE AND METHOD OF MANUFACTURING SAME - Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection. | 04-17-2014 |
20140134840 | METHOD FOR MANUFACTURING STRETCHABLE THIN FILM TRANSISTOR - Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate. | 05-15-2014 |
20140205747 | METHOD OF MANUFACTURING A FLEXIBLE FLAT CABLE - A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer. | 07-24-2014 |
20140218872 | ELECTRONIC CIRCUIT AND METHOD OF FABRICATING THE SAME - Provided is an electronic circuit. The electronic circuit includes: a substrate including a device region and a wiring region; an electronic device disposed on the device region; and a conductive wire disposed on the wiring region and connected to the electronic device, wherein the substrate has a first side where the electronic device and the conductive wire contact and a second side facing the first side; the first side and the second side of the wiring region have a convex structure; the first side of the device region is flat; and the device region is thicker than the wiring region. | 08-07-2014 |
20140299362 | STRETCHABLE ELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a stretchable electric circuit and a manufacturing method thereof The method for manufacturing the stretchable electric circuit includes forming a mold substrate, forming a stretchable substrate having a first flat surface and a first corrugated surface outside the first flat surface on the mold substrate, removing the mold substrate, forming a corrugated wire on the first corrugated surface, and forming an electric device connected to the corrugated wire on the first flat surface. | 10-09-2014 |
20150048375 | METHOD OF MANUFACTURING STRETCHABLE SUBSTRATE AND STRETCHABLE SUBSTRATE MANUFACTURED USING THE METHOD - Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another. | 02-19-2015 |
20150147854 | METHOD OF FABRICATING ELECTRONIC CIRCUIT - Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern. | 05-28-2015 |
20150159266 | METHOD OF MANUFACTURING FLEXIBLE SUBSTRATE ALLOWING ELECTRONIC DEVICE TO BE MOUNTED THERETO - Provided is a method of manufacturing a flexible substrate allowing an electronic device to be mounted thereto. The method of manufacturing a flexible substrate allowing an electronic device to be mountable thereto, includes preparing a substrate, applying a force to the substrate to stretch the substrate in horizontal direction, performing a surface treatment process on the substrate and forming a first region having a plurality of wavy surfaces, and forming an electrode on the first region. | 06-11-2015 |
20150273833 | ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME - Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes. | 10-01-2015 |
20150348800 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate. | 12-03-2015 |
20150349136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices. | 12-03-2015 |