Soejima
Hideaki Soejima, Amagasaki-Shi JP
Patent application number | Description | Published |
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20160119500 | IMAGE PROCESSING APPARATUS, TERMINAL DEVICE, AND NON-TRANSITORY DATA RECORDING MEDIUM RECORDING CONTROL PROGRAM - A processor of an MFP generates a first additional image based on an image in a designated region of a document. Furthermore, the processor of the MFP generates a second additional image showing a difference between the document and a document before revision of the document. Then, the processor of the MFP registers the first additional image and the second additional image on a server in association with a marker image showing the revised edition number of the document. | 04-28-2016 |
Narumasa Soejima US
Patent application number | Description | Published |
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20160005861 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer. | 01-07-2016 |
Narumasa Soejima, Nisshin-City JP
Patent application number | Description | Published |
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20160104794 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A silicon carbide semiconductor device includes: a vertical MOSFET having: a semiconductor substrate including a high-concentration impurity layer and a drift layer; a base region; a source region; a trench gate structure; a source electrode; and a drain electrode. The base region has a high-concentration base region and a low-concentration base region having a second conductivity type with an impurity concentration lower than the high-concentration base region, which are stacked each other. Each of the high-concentration base region and the low-concentration base region contacts a side surface of the trench. | 04-14-2016 |