Patent application number | Description | Published |
20100076191 | PROCESS FOR PREPARING TRIAZOLE SUBSTITUTED AZAINDOLEOXOACETIC PIPERAZINE DERIVATIVES AND NOVEL SALT FORMS PRODUCED THEREIN - A process is provided for preparing triazole substituted azaindoleoxoacetic piperazine derivative. Novel intermediates produced in the above process, and novel N-1 and amorphous forms of a 1,2,3-triazole substituted azaindoloxoacetic piperazine derivatives and processes for producing such novel forms are also provided. | 03-25-2010 |
20100210599 | PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 08-19-2010 |
20120238755 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 09-20-2012 |
20130253196 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 09-26-2013 |
20150025240 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 01-22-2015 |
20150232414 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 08-20-2015 |
20150315218 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection: | 11-05-2015 |
Patent application number | Description | Published |
20160086829 | SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL - Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material. | 03-24-2016 |
20160099160 | METHOD FOR COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES - A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatize the sacrificial bracing material. | 04-07-2016 |
Patent application number | Description | Published |
20100261352 | METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE - A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped. | 10-14-2010 |
20110244600 | METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE - A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) | 10-06-2011 |
20120304483 | SUBSTRATE FREEZE DRY APPARATUS AND METHOD - An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber. | 12-06-2012 |
20140101964 | DELAMINATION DRYING APPARATUS AND METHOD - An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees. | 04-17-2014 |
20140179097 | DEPOSITION APPARATUS AND METHOD - A method for filling features in a layer over a substrate is provided. A dispersion of nanoparticles less than 5 nm is placed on the layer. The liquid is frozen by lowering a temperature of the liquid. The frozen liquid is sublimated by decreasing pressure and subsequently heating the frozen liquid, wherein the nanoparticles are not sublimated. | 06-26-2014 |
20140373384 | METHOD OF COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES - A method, for drying an etched layer with a plurality of structures with etched spaces between the plurality of structures is provided. A liquid is provided within the spaces on the etched layer. The liquid is displaced with a drying solution with a solvent. Some of the solvent is removed from the drying solution to form a solid from the solution, wherein the solid at least fill half the height of the etched high aspect ratio spaces. The solid is removed. | 12-25-2014 |
20160097590 | SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING SACRIFICIAL BRACING MATERIAL THAT IS REMOVED USING HYDROGEN-RICH PLASMA - Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The substrate is exposed to plasma generated using a plasma gas chemistry that is hydrogen rich to remove the bracing material thereby drying the substrate including the HAR structures without damaging the plurality of HAR structures. | 04-07-2016 |
Patent application number | Description | Published |
20100248485 | METHOD FOR DIELECTRIC MATERIAL REMOVAL BETWEEN CONDUCTIVE LINES - A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts. | 09-30-2010 |
20100285671 | STRIP WITH REDUCED LOW-K DIELECTRIC DAMAGE - A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas. | 11-11-2010 |
20110097821 | METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE - A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) | 04-28-2011 |
20110097904 | METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE - A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH | 04-28-2011 |