Patent application number | Description | Published |
20090084182 | MICROMECHANICAL SENSOR ELEMENT - A micromechanical sensor element ( | 04-02-2009 |
20090101997 | Micromechanical Capacitive Pressure Transducer and Production Method - The present invention describes a method for producing a micromechanical capacitive pressure transducer and a micromechanical component produced by this method. First, a first electrode is produced in a doped semiconductor substrate. | 04-23-2009 |
20090142873 | Method for Manufacturing a Sensor Array Including a Monolithically Integrated Circuit - A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same. | 06-04-2009 |
20090236610 | Method for Manufacturing a Semiconductor Structure, and a Corresponding Semiconductor Structure - A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided. | 09-24-2009 |
20100035068 | Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type - A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material. | 02-11-2010 |
20100140618 | Sensor and method for the manufacture thereof - A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer. | 06-10-2010 |
20100164027 | METHOD FOR PRODUCING A COMPONENT, AND SENSOR ELEMENT - A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity. | 07-01-2010 |
20110002359 | SENSOR AND METHOD FOR PRODUCING THE SAME - A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm. | 01-06-2011 |
20120132925 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE, AND A CORRESPONDING SEMICONDUCTOR STRUCTURE - A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate ( | 05-31-2012 |