Patent application number | Description | Published |
20080259733 | ULTRASONIC TRANSDUCER AND MANUFACTURING METHOD THEREOF - A technology capable of improving receiver sensitivity and improving insulation withstand voltage in an ultrasonic transducer is provided. An ultrasonic transducer comprises: a lower electrode; an insulator covering the lower electrode; a cavity portion disposed on the insulator so as to overlap with the lower electrode; and an upper electrode disposed so as to overlap with the cavity portion. In this ultrasonic transducer, an insulator is inserted between the upper and lower electrodes in a part not having the cavity portion. By this means, sum total of thickness of insulators between the upper and lower electrodes in a part not having the cavity portion is larger than sum total of thickness of insulators between the upper and lower electrodes in a part having the cavity portion. | 10-23-2008 |
20080274576 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity. | 11-06-2008 |
20080277661 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads. | 11-13-2008 |
20080283945 | SEMICONDUCTOR DEVICE - A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes. | 11-20-2008 |
20090011592 | METHOD OF MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N | 01-08-2009 |
20090189480 | Ultrasonic Transducer And Manufacturing Method - This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, an insulation film covering the lower electrodes, plural hollow parts formed to overlap the lower electrodes on the insulation film, an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, the surfaces of the hollow parts and insulation film are flattened to the same height. | 07-30-2009 |
20090301199 | ULTRASONOGRAPHIC DEVICE - The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer ( | 12-10-2009 |
20090322181 | ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - A technique for a capacitive micromachined ultrasonic transducer (CMUT) for achieving high transmitted sound pressure and high receiver sensitivity is provided. An opening portion ( | 12-31-2009 |
20100137719 | ULTRASONIC TRANSDUCER AND ULTRASONIC IMAGING APPARATUS - The invention aims to give uniform and stable characteristics to a cMUT-cell array and to improve acoustic characteristics. To this end, a signal blocking section is additionally provided for cells | 06-03-2010 |
20100148594 | Ultrasonic Transducer And Manufacturing Method Thereof - An ultrasonic transducer includes a first electrode, a second electrode, an insulating film disposed between the first and second electrodes, and a cavity disposed between the first and second electrodes. The insulating film includes a projection extending in the cavity, and a portion of the cavity is disposed between the projection and the first electrode. A portion of one of the first electrode and the second electrode has an opening corresponding to a position of the projection of the insulating film when viewed in plan view. | 06-17-2010 |
20100232257 | ULTRASONIC PROBE AND ULTRASONIC IMAGING DEVICE - Provided is an ultrasonic probe for simultaneously achieving improvement of both of a generatable sound pressure and a gain. An upper electrode | 09-16-2010 |
20110086443 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips | 04-14-2011 |
20110272693 | MANUFACTURING METHOD OF ULTRASONIC PROBE AND ULTRASONIC PROBE - The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented. | 11-10-2011 |
20110316383 | ULTRASONIC TRANSDUCER, METHOD OF PRODUCING SAME, AND ULTRASONIC PROBE USING SAME - Disclosed is an art for a capacitive micromachined ultrasonic transducer (CMUT), which suppresses deformation in a cavity, non-uniformity in the thickness of an insulating film enclosing the cavity, and deterioration in the flatness of the surface profile of a membrane, even when the bottom electrode of the ultrasonic transducer is electrically connected from the bottom of the bottom electrode. The ultrasonic transducer is provided with: a bottom electrode ( | 12-29-2011 |
20120069701 | ULTRASONIC TRANSDUCER AND ULTRASONIC DIAGNOSTIC APPARATUS PROVIDED WITH SAME - For disposing projections of insulating film protruding into a hollow part in CMUT in order to suppress injection of electrical charge into the insulating film due to contact of a lower surface of a membrane with a lower surface of the hollow part, there are provided a structure of disposed projections preferred for suppressing increase in driving voltage for CMUT and decrease in receiving sensitivity, and an ultrasonic diagnostic apparatus using the same. The ultrasonic transducer of the present invention comprises a first electrode, a lower insulating film formed on the first electrode, an upper insulating film provided so as to form a hollow part above the lower insulating film, and a second electrode formed on the upper insulating film, and is characterized in that the lower insulating film or the upper insulating film has projections on the side of the hollow part, and the first electrode or the second electrode has openings formed at positions corresponding to the positions at which the projections are formed. | 03-22-2012 |
20120123268 | ULTRASOUND PROBE AND ULTRASOUND IMAGING DEVICE - Spurious response resulting from a high-order vibration mode that occurs when the cell shape of a capacitive micro-machined ultrasonic transducer is anisotropic is reduced. Assuming that a ratio between a long direction (l) and a short direction (w) of a diaphragm forming a capacitive micro-machined ultrasonic transducer is a representative aspect ratio (l/w), the representative aspect ratio is set to a value at which a dip of 6 dB or greater would not be formed within a transmit and receive bandwidth of a probe. Alternatively, the representative aspect ratio is so set that there would be six or more vibration modes for which the value obtained by dividing the frequency of a vibration mode having an odd number of anti-nodes by a fundamental mode frequency would be 2 or less. | 05-17-2012 |
20120316445 | Ultrasonic transducer and ultrasonic diagnostic device using same - In an ultrasonic transducer comprising a first electrode, a first insulating film disposed on the first electrode, a hollow part provided above the first insulating film and disposed between surfaces above and below the hollow part, a second insulating film disposed above the hollow part, and a second electrode disposed on the second insulating film, a first conductive film disposed on the side of the surface below the hollow part and a second conductive film disposed on the side of the surface above the hollow part are provided, the first conductive film and the second conductive film are disposed so that they overlap with a region in which the surfaces above and below the hollow part contact with each other as seen from above when the transducer is driven, and they do not overlap with each other in the region as seen from above. With such a configuration, there are provided a structure suitable for, even when the surface above the hollow part contacts with the surface below the hollow part, suppressing concentration of electric fields and electric currents in the insulating films in the contact region, and suppressing injection of electrical charge into the insulating films and degradation of dielectric strength thereof, and an ultrasonic diagnostic device using it. | 12-13-2012 |
20120326556 | Ultrasonic Transducer and Manufacturing Method - An ultrasonic transducer includes a first electrode, a first insulation film covering the first electrode, a hollow part overlapping the first electrode on the first insulation film, a second insulation film covering the hollow part, a second electrode overlapping the hollow part on the second insulation film, and an interconnection joined to the second electrode. An edge of the first electrode is formed so as to moderate a step of the first electrode. | 12-27-2012 |
20130241345 | ULTRASONIC TRANSDUCER AND ULTRASONIC DIAGNOSTIC EQUIPMENT USING THE SAME - High transfer sound pressure and high reception sensitivity are realized, and reliability is improved in terms of long term operation, in a capacitive detector-type ultrasonic transducer (CMUT). The ultrasonic transducer, which has a lower electrode ( | 09-19-2013 |