Patent application number | Description | Published |
20080245297 | Material supply apparatus - A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening. | 10-09-2008 |
20090146541 | INFRARED REFLECTOR AND HEATING DEVICE HAVING THE SAME - Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector. | 06-11-2009 |
20090200545 | ZnO-Based Semiconductor Device - Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers | 08-13-2009 |
20100040534 | RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM - Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil ( | 02-18-2010 |
20100090214 | OXIDE THIN FILM AND OXIDE THIN FILM DEVICE - Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film ( | 04-15-2010 |
20100133470 | ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE - Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a Mg | 06-03-2010 |
20100230671 | ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped Mg | 09-16-2010 |
20100237343 | ZnO-BASED THIN FILM AND SEMICONDUCTOR DEVICE - Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of Mg | 09-23-2010 |
20100289004 | ZNO-BASED THIN FILM AND ZNO-BASED SEMICONDUCTOR ELEMENT - Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer | 11-18-2010 |
20100308327 | ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate. | 12-09-2010 |
20100323160 | ZnO-BASED THIN FILM - Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. | 12-23-2010 |
20110033718 | ZnO THIN FILM - Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An Mg | 02-10-2011 |
20110114937 | p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film. | 05-19-2011 |
20110114938 | ZnO SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element. | 05-19-2011 |
20120181531 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - A semiconductor element includes a semiconductor layer mainly composed of Mg | 07-19-2012 |
20120199826 | PHOTODETECTION DEVICE AND OPTICAL FILTER USED THEREIN - Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element. | 08-09-2012 |
20120261658 | ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure. | 10-18-2012 |
20130038209 | PHOTODETECTING ELEMENT, PHOTODETECTING DEVICE, AND AUTO LIGHTING DEVICE - To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate. | 02-14-2013 |
20140071525 | OPTICAL FILTER - Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element. | 03-13-2014 |