Shuichi Kubo
Shuichi Kubo, Ibaraki JP
Patent application number | Description | Published |
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20100200865 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME - A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm | 08-12-2010 |
20110129669 | NITRIDE SEMICONDUCTOR CRYSTAL AND ITS PRODUCTION METHOD - A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal. | 06-02-2011 |
20110180904 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME - A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm | 07-28-2011 |
20120112320 | NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF - A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates. | 05-10-2012 |
Shuichi Kubo, Toyoake-Shi JP
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20100058832 | Soot Generation Amount Estimation Apparatus For Internal Combustion Engine - A soot generation amount estimation apparatus obtains a generation speed of a precursor of soot (accordingly, the concentration of the precursor) in consideration of formation of the precursor from fuel, thermal decomposition of the formed precursor, and formation of soot from the formed precursor, and estimates a generation speed of soot (accordingly, the concentration of soot (the generation amount of soot)) in consideration of formation of soot from the precursor, which depends on the concentration of the precursor, and oxidation of the formed soot. The apparatus employs a reaction model in which the reaction process in which soot is generated from fuel is divided into two steps; i.e., a reaction process in which a precursor is generated from fuel and a reaction process in which soot is generated from the precursor. Thus, phenomena, such as a “delay in soot generation” in the reaction process in which soot is generated from fuel, can be accurately simulated. | 03-11-2010 |
Shuichi Kubo, Ushiku-Shi JP
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20130264606 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - The problems addressed by the present invention lies in providing a Group III nitride semiconductor substrate having a principal plane on which high-quality crystals can be grown and also providing a method for producing a Group III nitride semiconductor substrate capable of obtaining a crystal which has few stacking faults and in which stacking faults in directions parallel to the polar plane in particular have been greatly suppressed. The problem is solved by means of a Group III nitride semiconductor substrate having a plane other than a C plane as a principal plane, wherein a ratio (W | 10-10-2013 |
20150093318 | PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUFACTURING PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS - A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10 | 04-02-2015 |
20150311068 | GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR CRYSTAL - The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. | 10-29-2015 |