Patent application number | Description | Published |
20120205769 | BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE - Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure. | 08-16-2012 |
20130009270 | BACKSIDE ILLUMINATION SENSOR HAVING A BONDING PAD STRUCTURE AND METHOD OF MAKING THE SAME - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa. | 01-10-2013 |
20130032916 | Pad Structures in BSI Image Sensor Chips - An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed. | 02-07-2013 |
20130032920 | Pad Structures Formed in Double Openings in Dielectric Layers - An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening. | 02-07-2013 |
20130285179 | Image Sensor Device and Method - A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk. | 10-31-2013 |
20130285181 | Apparatus and Method for Reducing Cross Talk in Image Sensors - A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer. | 10-31-2013 |
20130307104 | Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency - A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid. | 11-21-2013 |