Shu Yuan
Shu Yuan, Singapore SG
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20080210969 | Fabrication of Semiconductor Devices for Light Emission - A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer. | 09-04-2008 |
20080210970 | Fabrication of Conductive Metal Layer on Semiconductor Devices - A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode. | 09-04-2008 |
20080224173 | Fabrication Transistors - A method for fabricating transistors such as high electron mobility transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising: (a) forming a plurality of source contacts on a first surface of the plurality of epitaxial layers; (b) forming at least one drain contact on the first surface; (c) forming at least one gate contact on the first surface; (d) forming at least one insulating layer over and between the gate contacts, source contacts and the drain contacts; (e) forming a conductive layer over at least a part of the at least one insulating layer for connecting the source contacts; and (f) forming at least one heat sink layer over the conductive layer. | 09-18-2008 |
20100047996 | LOCALIZED ANNEALING DURING SEMICONDUCTOR DEVICE FABRICATION - A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer. | 02-25-2010 |
20100117107 | ELECTRICAL CURRENT DISTRIBUTION IN LIGHT EMITTING DEVICES - A light emitting device is disclosed that has a plurality of epitaxial layers including an active layer, at least one of a reflective layer and an ohmic contact on a first side of the epitaxial layers; and a layer of a conductive metal on a second side of the epitaxial layers and having a light emitting surface. A terminal is on the light emitting surface, the terminal comprising an array for diffusing electrical current and minimizing its effect on light output. The array may have a bonding pad, an outer portion, and a joining portion connecting the bonding pad and the outer portion; the outer portion and the joining portion being for current dissipation. | 05-13-2010 |
20100295014 | IMPROVEMENTS IN EXTERNAL LIGHT EFFICIENCY OF LIGHT EMITTING DIODES - A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed. | 11-25-2010 |
Shu Yuan, New Territories HK
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20100244195 | HOST SUBSTRATE FOR NITRIDE BASED LIGHT EMITTING DEVICES - A host substrate and method of making a host substrate for nitride based thin-film semiconductor devices are provided. According to one embodiment, the method includes the steps of providing a silicon layer; etching a pattern of holes in the silicon layer; plating the silicon layer with copper to fill the holes etched in the silicon layer; bonding the silicon layer to a gallium nitride (GaN) layer, the GaN layer attached to a sapphire substrate; and removing the sapphire substrate. The host substrate is configured to address the coefficient of thermal expansion (CTE) mismatch problem and reduce the amount of stress resulting from such CTE mismatch. A combination of metal and semiconductor materials provide for the desired thermal and electrical conductivity while providing for subsequent dicing and incorporation of the finished semiconductor devices into other circuits. | 09-30-2010 |
Shu Yuan, Hong Kong CN
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20090302336 | SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate; growing one or more buffer layers on the substrate; growing one or more epitaxial layers on the one or more buffer layers; and applying one or more metal layers to the one or more epitaxial layers. Additionally, the steps of affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed. | 12-10-2009 |
20100200880 | SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate, each of the plurality of polishing stops including ceramic material; growing one or more buffer layers on the substrate; and growing one or more epitaxial layers on the one or more buffer layers. Additionally, the steps of applying one or more metal layers to the one or more epitaxial layers, affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed. | 08-12-2010 |
Shu Yuan, Science Park I SG
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20100167501 | SEPARATION OF SEMICONDUCTOR DEVICES - A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers. | 07-01-2010 |