Patent application number | Description | Published |
20080291958 | SEMICONDUCTOR LASER DEVICE - In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest. | 11-27-2008 |
20080317080 | SEMICONDUCTOR LASER DEVICE - In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest. | 12-25-2008 |
20100111130 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 05-06-2010 |
20100127154 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND OPTICAL PICKUP - A nitride-based semiconductor laser device includes a facet coating film including an alteration preventing layer formed on a light reflecting side facet of a nitride-based semiconductor element layer and a reflectance control layer formed on the alteration preventing layer. The reflectance control layer is formed by a high refractive index layer and a low refractive index layer which are alternately stacked, the alteration preventing layer is constituted by stacking at least two layers, each of which is formed by a dielectric layer made of a nitride, an oxide or an oxynitride. The alteration preventing layer has a first layer made of a nitride in contact with the light reflecting side facet, and a thickness of each of the layers constituting the alteration preventing layer is smaller than that of the high refractive index layer and is smaller than that of the low refractive index layer. | 05-27-2010 |
20100303116 | SEMICONDUCTOR LASER DEVICE AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film. | 12-02-2010 |
20120063482 | SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a first dielectric layer controlling a reflectance of the emitting side cavity facet and a second dielectric layer. A thickness of the second dielectric layer is set to a thickness defined by m×λ/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is λ. and a refractive index of the second dielectric layer is n, and is larger than a thickness of the first dielectric layer and at least 1 μm. | 03-15-2012 |
20120063483 | SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m×λ/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is λ and a refractive index of the dielectric layer is n, and at least 1 μm. | 03-15-2012 |
20130070801 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 03-21-2013 |