Patent application number | Description | Published |
20090189190 | High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor | 07-30-2009 |
20090194796 | Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate - Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film ( | 08-06-2009 |
20100230687 | III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE - In a group III nitride hetero junction transistor | 09-16-2010 |
20100230723 | High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor ( | 09-16-2010 |
20110049573 | GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of Al | 03-03-2011 |
20110097880 | FILM DEPOSITION METHOD - Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film is to be deposited, according to the lattice constant the material that will constitute the thin film to be deposited and the lattice constant of a material constituting the one main surface. The thin film is deposited on the one main surface of the substrate with the substrate curved. | 04-28-2011 |
20110278647 | III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICATING III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE - A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor. | 11-17-2011 |
20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
20120006263 | FILM DEPOSITION APPARATUS - When a film is to be deposited on a semiconductor substrate or the like in a heating ambient, the semiconductor substrate is caused to warp (curve) to a considerable extent merely due to an increased temperature. The warpage leads to problems such as degradation of the homogeneity of the quality of the film deposited on the substrate and a high possibility of generation of a crack in the substrate. Accordingly, a film deposition apparatus of the present invention heats the substrate both from above and from below a main surface of the substrate so that a temperature gradient (temperature difference) between the upper side and the lower side of the main surface is reduced and the warpage of the substrate is suppressed. More preferably a measurement unit for measuring the curvature or warpage of the substrate is included. | 01-12-2012 |
20120161205 | GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of Al | 06-28-2012 |
20120211801 | GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer | 08-23-2012 |
20140054680 | METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF PERFORMING THERMAL TREATMENT - A method of forming a group III nitride semiconductor comprises: preparing a group III nitride semiconductor which contains a p-type dopant or an n-type dopant; and performing a treatment of the group III nitride semiconductor by using a reducing gas and a nitrogen source gas to form a conductive group III nitride semiconductor. The treatment includes performing a first treatment of the group III nitride semiconductor by using a first treatment gas including the reducing gas and the nitrogen source gas, which are supplied to a treatment apparatus at a first flow rate and a second flow rate, respectively, and after the first treatment is performed, performing a second treatment of the group III nitride semiconductor by using a second treatment gas including the reducing gas and the nitrogen source gas, which are supplied to the treatment apparatus at a third flow rate and a fourth flow rate, respectively. | 02-27-2014 |