Patent application number | Description | Published |
20100133688 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate). | 06-03-2010 |
20100181650 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions. | 07-22-2010 |
20120032329 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate). | 02-09-2012 |
20130313708 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate). | 11-28-2013 |
Patent application number | Description | Published |
20100181650 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions. | 07-22-2010 |
20100301459 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - The warpage of a semiconductor wafer or a semiconductor chip is inhibited. A method includes a step of successively forming, pads formed over the main surface of the semiconductor chip, an insulation layer formed by covering the main surface such that the pads are exposed, an insulation film formed over the insulation layer such that the pads are exposed, rewirings formed over the insulation film and electrically coupled with the pads, respectively, an insulation film formed over each rewirings such that portions of the rewirings are exposed, and bumps respectively bonded with the regions of the rewirings exposed from the insulation film. Any one of the insulation film and the insulation layer is formed such that a portion of an insulation layer or the insulation film formed closer to the back surface side than the insulation film or the insulation layer is exposed. | 12-02-2010 |
Patent application number | Description | Published |
20080304529 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGaAs cladding layers do not exceed those of the pair of InGaAsP guiding layers. | 12-11-2008 |
20090080484 | SEMICONDUCTOR LASER APPARATUS - A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the active layer, transverse to the active layer, through the n-type cladding layer side guide layer and the p-type cladding layer side guide layer. The p-type cladding layer side guide layer is thinner than the n-type cladding layer side guide layer to position the active layer closer to the p-type cladding layer, and, at the same time, the refractive index of the p-type cladding layer side guide layer is higher than the refractive index of the n-type cladding layer side guide layer. | 03-26-2009 |
20090237798 | SEMICONDUCTOR PHOTONIC DEVICE - A coating film is provided on an end surface of a semiconductor photonic element including an active layer through which light propagates. The coating film has a two-layer structure including a first layer film and a second layer film arranged in a stacked relation. The thicknesses of the first and second layer films are determined so that the value of the amplitude reflectivity of the coating film is equal to an imaginary number. | 09-24-2009 |
20100103970 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer. | 04-29-2010 |
20100118904 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three modes, including the fundamental mode and two higher order modes. The number of active layers is equal to or greater than the number of extreme points of the electric field of a particular one of the higher order modes. At least one of the active layers is disposed near extreme point of the electric field of the particular higher order mode, within the optical waveguide portion. | 05-13-2010 |
20110002351 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: a p-type cladding layer; a p-type cladding layer guide layer; an active layer; an n-type cladding layer guide layer; and an n-type cladding layer, in which each of the p-type and n-type cladding layer guide layers is undoped or close to undoped, the sum of the thickness of the p-type cladding layer guide layer and the thickness of the n-type cladding layer guide layer is at least 200 nm, and both of (i) the difference between the band gap energy of the p-type cladding layer guide layer and the band gap energy of the active layer, and (ii) the difference between the band gap energy of the n-type cladding layer guide layer and the band gap energy of the active layer do not exceed 0.3 eV. | 01-06-2011 |
20110128986 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2×10 | 06-02-2011 |
20120195337 | SEMICONDUCTOR LASER - A semiconductor laser includes: a DBR (Distributed Bragg Reflector) region having a diffraction grating; a FP (Fabry-Perot) region having no diffraction grating; and an optical waveguide section placed between the DBR region and an outputting end surface. A length of the optical waveguide section is longer than a length of the DBR region in a resonator length direction. | 08-02-2012 |
20130016753 | SEMICONDUCTOR LASERAANM SHIGIHARA; KimioAACI TokyoAACO JPAAGP SHIGIHARA; Kimio Tokyo JP - An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser. The resonator includes a diffraction grating in the vicinity of the emitting facet of the laser. The width of the diffraction grating in a plane perpendicular to the growth direction and perpendicular to the length of the resonator is different at first and second locations along the length of the resonator. The width of the diffraction grating along a direction which is perpendicular to the length of the resonator increases with increasing distance from the front facet of the semiconductor laser. | 01-17-2013 |
20140098831 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions. | 04-10-2014 |
20140294028 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer. | 10-02-2014 |
20150023380 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer. | 01-22-2015 |