Patent application number | Description | Published |
20100252070 | METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER - After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even. | 10-07-2010 |
20100288192 | METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER - A silicon oxide film on a wafer front surface, including on internal surfaces of pits, is removed by hydrogen fluoride gas. The pits are thus completely filled with a film growth component at a time of epitaxial film growth. Thereby, productivity is not reduced; wafer flatness is enhanced; and micro-roughness of the wafer front surface is improved. | 11-18-2010 |
20120034850 | METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step. | 02-09-2012 |
20120122316 | METHOD FOR SURFACE TREATMENT OF A WAFER - An object of the present invention is to provided a wafer exhibiting excellent surface properties, in which variation in reaction, which has been concerned in surface treatment with a diffusion controlled process such as conventional wet treatment, is effectively suppressed in a method for surface treatment of a wafer involving a chemical treatment. | 05-17-2012 |
20120156878 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface. | 06-21-2012 |
20130291925 | SOLAR CELL WAFER AND METHOD OF PRODUCING THE SAME - A solar cell wafer having a porous layer on a surface of a semiconductor wafer typified by a silicon wafer, which can further reduce reflection loss of light at the surface. A solar cell wafer | 11-07-2013 |