Shiely
Brent Shiely, Eden Prairie, MN US
Patent application number | Description | Published |
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20090216861 | Integrated Software Network Agent - A model for the next generation of software network agents for downloadable software is provided. The software network agent delivers a streamlined user experience that presents the user with options to try or buy. The agent may be co-branded for merchant and affiliate marketing. The agent may be integrated with a number of services, such as ecommerce systems, affiliate marketing network systems, site optimization, web analytics and email marketing systems that enable a merchant to enhance the user experience and improve marketing. A user's actions may be tracked in order to provide OEMs and retailers payout on purchase referrals to the merchant's online store. Code changes and bug fixes can be made at the server and in a timely manner with minimal impact to the various systems supporting the software activation user experience. | 08-27-2009 |
20120150644 | INTEGRATED SOFTWARE NETWORK AGENT - A model for the next generation of software network agents for downloadable software is provided. The software network agent delivers a streamlined user experience that presents the user with options to try or buy. The agent may be co-branded for merchant and affiliate marketing. The agent may be integrated with a number of services, such as ecommerce systems, affiliate marketing network systems, site optimization, web analytics and email marketing systems that enable a merchant to enhance the user experience and improve marketing. A user's actions may be tracked in order to provide OEMs and retailers payout on purchase referrals to the merchant's online store. Code changes and bug fixes can be made at the server and in a timely manner with minimal impact to the various systems supporting the software activation user experience. | 06-14-2012 |
Brent D. Shiely, Eden Prairie, MN US
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20100131386 | E-Commerce Purchase Eligibility Determination System and Method - A system and method for determining e-commerce purchase eligibility of product offerings restricted to particular market segments and used in conjunction with an e-commerce system is described. Identifying information provided by the user is compared to a white list of eligibility parameters selected and configured by the vendor. An e-mail confirming eligibility and containing a customized URL is provided to the user; selecting the link automatically logs the user into the account. The system allows limited or unlimited purchases to be made by qualified users. Fraud detection is performed prior to checkout. Once the order has been processed the user may immediately download the product. An e-mail is sent to the user providing delayed downloading instructions and license key. Downloading may inject the license key for automatic software product or application activation. | 05-27-2010 |
20130317899 | E-COMMERCE PURCHASE ELIGIBILITY DETERMINATION SYSTEM AND METHOD - A system and method for determining e-commerce purchase eligibility of product offerings restricted to particular market segments and used in conjunction with an e-commerce system is described. Identifying information provided by the user is compared to a white list of eligibility parameters selected and configured by the vendor. An e-mail confirming eligibility and containing a customized URL is provided to the user; selecting the link automatically logs the user into the account. The system allows limited or unlimited purchases to be made by qualified users. Fraud detection is performed prior to checkout. Once the order has been processed the user may immediately download the product. An e-mail is sent to the user providing delayed downloading instructions and license key. Downloading may inject the license key for automatic software product or application activation. | 11-28-2013 |
James Shiely, Aloha, OR US
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20120284675 | EUV LITHOGRAPHY FLARE CALCULATION AND COMPENSATION - Extreme ultraviolet (EUV) lithography flare calculation and compensation is disclosed herein. A method of calculating flare for a mask for use in EUV lithography includes decomposing the flare power spectrum density (PSD) into a low frequency component and a high frequency component. Further, the method includes receiving a plurality of layouts in a flare map generator. Each of the plurality of layouts corresponds to a chip pattern location on the mask. Moreover, the method includes generating, using the flare map generator, a low frequency flare map for the mask from the low frequency component by using fast Fourier transform (FFT). | 11-08-2012 |
20140245239 | DETECTION AND REMOVAL OF SELF-ALIGNED DOUBLE PATTERNING ARTIFACTS - Mask design techniques for detection and removal of undesirable artifacts in SADP processes using multiple patterns are disclosed. Artifacts or spurs result from lithographic and chemical processing of semiconducting wafers. The spurs are undesirable because they can cause unwanted connections or act as electrical antennas. Spurs are detected using rule-based techniques and reduced by modifying lithographic masks. The severity of the detected spurs is determined, again using rule-based techniques. The effects of detected spurs can be reduced by modifying the decomposition of the drawn patterns into the two masks used for lithography. Mandrel masks are modified by add dummy mandrel material, and trim masks are modified by removing trim material. The resulting multi-pattern arrangement is used to fabricate the critical design elements that make up the semiconductor wafers. | 08-28-2014 |
James P. Shiely, Aloha, OR US
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20080219590 | Method and system for correlating physical model representation to pattern layout - One embodiment of the present invention provides a system that reduces computational complexity in simulating an image resulting from an original mask and an optical transmission system. During operation, the system obtains a set transmission cross coefficient (TCC) kernel functions based on the optical transmission system, and obtains a set of transmission functions for a representative pattern which contains features representative of the original mask. The system constructs a new set of kernel functions based on the TCC kernel functions and the transmission functions for the representative pattern, wherein responses to the new kernel functions in a resulting image corresponding to the representative pattern are substantially uncorrelated with one another. The system further produces an intensity distribution of a resulting image corresponding to the original mask based on the new kernel functions, thereby facilitating prediction of a layout that can be produced from the original mask. | 09-11-2008 |
20100115489 | METHOD AND SYSTEM FOR PERFORMING LITHOGRAPHY VERIFICATION FOR A DOUBLE-PATTERNING PROCESS - One embodiment of the present invention provides a system that performs lithography verification for a double-patterning process on a mask layout without performing a full contour simulation of the mask layout. During operation, the system starts by receiving a first mask which is used in a first lithography step of the double-patterning process, and a second mask which is used in a second lithography step of the double-patterning process. Note that the first mask and the second mask are obtained by partitioning the mask layout. Next, the system receives an evaluation point on the mask layout. The system then determines whether the evaluation point is exclusively located on a polygon of the first mask, exclusively located on a polygon of the second mask, or located elsewhere. The system next computes a printing indicator at the evaluation point for the mask layout based on whether the evaluation point is exclusively located on a polygon of the first mask or exclusively located on a polygon of the second mask. | 05-06-2010 |
20110029940 | METHOD AND APPARATUS FOR MODELING THIN-FILM TOPOGRAPHY EFFECT ON A PHOTOLITHOGRAPHY PROCESS - One embodiment of the present invention provides a system that determines image intensity at a location in a photoresist (PR) layer on a wafer. During operation, the system receives a set of masks which were used to generate one or more patterned layers of a multilayer structure on the wafer, wherein a patterned layer includes a set of reflectors on a top surface of the patterned layer, which correspond to patterns in a patterned-layer mask in the set of masks, wherein a reflector reflects light from a light source during a photolithography process. The system then generates a first virtual mask based on the first mask and the patterned-layer mask, wherein the first virtual mask uses a clear area to model a reflector in the set of reflectors. Next, the system determines the image intensity value at the location on the PR layer based at least on the first mask and the first virtual mask. | 02-03-2011 |
20120240086 | MODELING EUV LITHOGRAPHY SHADOWING EFFECT - Systems and techniques for modeling the EUV lithography shadowing effect are described. Some embodiments described herein provide a process model that includes an EUV lithography shadowing effect component. Polygon edges in a layout can be dissected into a set of segments. Next, the EUV lithography shadowing effect component can be used to bias each segment. The modified layout having the biased segments can then be used as input for other components in the process model. | 09-20-2012 |
20140114634 | MODELING AND CORRECTING SHORT-RANGE AND LONG-RANGE EFFECTS IN E-BEAM LITHOGRAPHY - Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent. | 04-24-2014 |
James P. Shiely, Portland, OR US
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20140032199 | Fast 3D Mask Model Based on Implicit Countors - Computer-readable medium and methods for photolithographic simulation of scattering. A design layout comprising a layout polygon is received. A skeleton representation of a mask shape that is created responsive to e-beam writing of the layout polygon is generated. The skeleton representation is defined by a plurality of skeleton points. Individual scattering patterns for the skeleton points are selected from a lookup table of pre-determined scattering patterns. Each of the individual scattering patterns representing an amount of optical scattering for a corresponding one of the skeleton points. A simulated wafer image is produced responsive to the individual scattering patterns. | 01-30-2014 |
James Patrick Shiely, Portland, OR US
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20120060132 | Non-Linear Rasterized Contour Filters - A system includes a conversion module that preserves the shape of a contour when converting an image to a different resolution. The conversion module receives a first image and divides the first image into regions of pixel values. For each region, a contribution of the region to the pixel values in the second image is determined. The contribution is selected from a set of pre-determined contributions that are a nonlinear function of the values in the region, and the selection is made based at least in part on the values in the region. The contributions are accumulated together to generate a second image. The conversion module may be, for example, part of a design flow for an integrated circuit that connects a mask simulation stage with an optical simulation stage. | 03-08-2012 |