Patent application number | Description | Published |
20100258861 | SEMICONDUCTOR DEVICE WITH RECESS GATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate with a recess pattern, a gate electrode filling the recess pattern, a threshold voltage adjusting layer formed in the substrate under the recess pattern, a source/drain region formed in the substrate on both sides of the gate electrode and a gate insulation layer, with the recess pattern being disposed between the gate electrode and the substrate, wherein the thickness of the gate insulation layer formed in a region adjacent to the source/drain region is greater than the thickness of the gate insulation layer formed in a region adjacent to the threshold voltage adjusting layer. | 10-14-2010 |
20120025327 | SEMICONDUCTOR DEVICE WITH METAL GATES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode. | 02-02-2012 |
20120261748 | SEMICONDUCTOR DEVICE WITH RECESS GATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate with a recess pattern, a gate electrode filling the recess pattern, a threshold voltage adjusting layer formed in the substrate under the recess pattern, a source/drain region formed in the substrate on both sides of the gate electrode and a gate insulation layer, with the recess pattern being disposed between the gate electrode and the substrate, wherein the thickness of the gate insulation layer formed in a region adjacent to the source/drain region is greater than the thickness of the gate insulation layer formed in a region adjacent to the threshold voltage adjusting layer. | 10-18-2012 |
20130105901 | SEMICONDUCTOR DEVICE WITH METAL GATE ELECTRODE AND HIGH-K DIELECTRIC MATERIAL AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130105905 | SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K DIELECTRIC LAYER, CMOS INTEGRATED CIRCUIT, AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130161710 | SEMICONDUCTOR DEVICE HAVING BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes: forming an insulation layer over a semiconductor substrate; forming a first conductive layer over the insulation layer; forming a plurality of buried bit lines and insulation layer patterns isolated by a plurality of trenches, wherein the plurality of trenches are formed by etching the first conductive layer and the insulation layer; forming a sacrificial layer to gap-fill the trenches; forming a second conductive layer over the buried bit lines and the sacrificial layer; and forming a plurality of pillars over each of the buried bit lines by etching the second conductive layer. | 06-27-2013 |
20130240957 | METHOD OF FORMING GATE DIELECTRIC LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process. | 09-19-2013 |
20130244394 | METHOD FOR FABRICATING CAPACITOR WITH HIGH ASPECT RATIO - A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer. | 09-19-2013 |
20140004679 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE | 01-02-2014 |
20140162448 | SEMICONDUCTOR DEVICE WITH METAL GATES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode. | 06-12-2014 |
20140183649 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND HIGH-K DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an N-channel transistor configured to have a first gate dielectric layer, a first metal containing gate electrode and a dipole forming layer, wherein the first metal containing gate electrode is formed on the first gate dielectric layer, and the dipole forming layer is formed on an interface of the first gate dielectric layer and the first metal containing gate electrode, and a P-channel transistor configured to have a channel region, a second gate dielectric layer and a second metal containing gate electrode, wherein the channel region has threshold voltage adjusting species, the second gate dielectric layer is formed on the channel region, and the second metal containing gate electrode has effective work function adjusting species of the second gate dielectric layer. | 07-03-2014 |
20140183651 | SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K MATERIALS AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species. | 07-03-2014 |
20140187030 | SEMICONDUCTOR DEVICE WITH DUAL WORK FUNCTION GATE STACKS AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer. | 07-03-2014 |
20140203337 | METHOD OF FORMING GATE DIELECTRIC LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process. | 07-24-2014 |
20150123167 | METHOD AND GATE STRUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS - A method of fabricating a semiconductor device. A substrate (PMOS/NMOS regions) is prepared. A high-k dielectric layer is formed over the substrate. A threshold voltage modulation layer is formed over the dielectric layer of the NMOS region. A first work function layer is formed over the threshold voltage modulation layer and the dielectric layer of the PMOS region. An oxidation suppressing layer is formed over the first work function layer of the NMOS region. A second work function layer is formed over the oxidation suppressing layer and the first work function layer of the PMOS region. A first gate stack including the dielectric layer, the first work function layer and the second work function layer is formed over the PMOS region. A second gate stack including the dielectric layer, the threshold voltage modulation layer, the first work function layer and the oxidation suppressing layer is formed over NMOS region. | 05-07-2015 |
20150129973 | SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming an NMOS region and a PMOS region in a substrate, forming a first stack layer including a first gate dielectric layer and a first work function layer that is disposed over the first gate dielectric layer and contains aluminum, over the PMOS region of the substrate, forming a second stack layer including a second gate dielectric layer, a threshold voltage modulation layer that is disposed over the second gate dielectric layer and contains lanthanum, and a second work function layer that is disposed over the threshold voltage modulation layer, over the NMOS region of the substrate, and annealing the first stack layer and the second stack layer, thereby forming a first dipole-interface by diffusion of the aluminum in the first gate dielectric layer and a second dipole-interface by diffusion of the lanthanum in the second gate dielectric layer, respectively. | 05-14-2015 |
20150137257 | SEMICONDUCTOR DEVICE WITH DUAL WORK FUNCTION GATE STACKS AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer. | 05-21-2015 |
20150206805 | SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K MATERIALS AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species. | 07-23-2015 |
20150263119 | SEMICONDUCTOR DEVICE WITH METAL GATE ELECTRODE AND HIGH-K DIELECTRIC MATERIAL AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a gate stacked structure including a gate dielectric layer over a semiconductor substrate, a metal layer formed over the gate dielectric layer, and a capping layer formed over the metal layer, where the capping layer includes a chemical element with a higher concentration at an interface between the capping layer and the metal layer than another region of the capping layer and the chemical element is operable to control an effective work function (eWF) of the gate stacked structure. | 09-17-2015 |
Patent application number | Description | Published |
20110001137 | THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME - Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer. | 01-06-2011 |
20110057189 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode. | 03-10-2011 |
20110090420 | SENSOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor. | 04-21-2011 |
20110090437 | PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE - A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers. | 04-21-2011 |
20110109609 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time. | 05-12-2011 |
20110147740 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME - The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer. | 06-23-2011 |
20110147746 | TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE - A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode. | 06-23-2011 |
20110261040 | INFORMATION DETECTION DISPLAY - An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage. | 10-27-2011 |
20120032169 | Visible ray sensor and light sensor including the same - The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal. | 02-09-2012 |
20120138929 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 06-07-2012 |
20120139866 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND TOUCH-DETECTING DISPLAY APPARATUS HAVING THE SAME - A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light. | 06-07-2012 |
20140287542 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 09-25-2014 |
20140362000 | DISPLAY DEVICE INCLUDING TOUCH SENSOR AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a display device including a touch sensor and a manufacturing method thereof, and more particularly, to a display device including a touch sensor using a piezoelectric material and a manufacturing method thereof. The display device includes a first substrate, wherein a plurality of thin film transistors are disposed on the first substrate; a second substrate disposed facing the first substrate; a plurality of piezoelectric elements disposed on the second substrate; and a first sensing electrode overlapping the piezoelectric elements, the first sensing electrode being configured to transfer a sensing voltage generated as a result of pressure applied to the piezoelectric elements. | 12-11-2014 |
20150070305 | TOUCH SENSING DISPLAY DEVICE - A touch sensing display device includes: a thin film transistor array panel including a thin film transistor; and an opposing display panel facing the thin film transistor array panel. The opposing display panel includes a piezoelectric sensor including a capacitive sensor and a piezoelectric layer. The capacitive sensor includes sensing wires, driving wires, and a bridge connecting the sensing wires together or the driving wires together. The piezoelectric sensor further includes a pair of electrodes, the piezoelectric layer being disposed between the pair of electrodes. The bridge and a first electrode of the pair of electrodes are formed of the same material and in the same layer. | 03-12-2015 |
20150078604 | DISPLAY DEVICE - A display device includes a display panel which displays an image, a cushion tape member which is disposed below the display panel to protect a rear surface of the display panel, and includes a first cushion tape and a second cushion tape, a sound element which is disposed between the first cushion tape and the second cushion tape, and includes a pair of electrodes and a vibrating material layer disposed between the pair of electrodes. | 03-19-2015 |
20150243827 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND TOUCH DISPLAY APPARATUS HAVING THE SAME - A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light. | 08-27-2015 |