Patent application number | Description | Published |
20080244339 | Read level control apparatuses and methods - Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate. | 10-02-2008 |
20080276149 | Error control code apparatuses and methods of using the same - An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data. | 11-06-2008 |
20080276150 | ERROR CONTROL CODE APPARATUSES AND METHODS OF USING THE SAME - An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose. | 11-06-2008 |
20080285340 | Apparatus for reading data and method using the same - Disclosed are an apparatus and a method for reading data. The method for reading data according to example embodiments includes comparing a threshold voltage of a memory cell with a first boundary voltage, comparing the threshold voltage with a second boundary voltage having a higher voltage level than that of the first boundary voltage, and determining data of the memory cell based on the threshold voltage, the first boundary voltage, and the second boundary voltage. | 11-20-2008 |
20080304323 | Method and apparatus for programming data of memory cells considering floating poly coupling - A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data. | 12-11-2008 |
20080320064 | Method and apparatus for controlling reading level of memory cell - A method and apparatus for controlling a reading level of a memory cell are provided. The method of controlling a reading level of a memory cell may include: receiving metric values calculated based on given voltage levels and reference levels; generating summed values for each of the reference levels by summing metric values corresponding to levels of a received signal from among the received metric values; selecting the reference level having the greatest value of the generated summed values from the reference levels; and controlling the reading level of the memory cell based on the selected reference level. | 12-25-2008 |
20090027238 | Apparatuses and methods for encoding and decoding - A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number. | 01-29-2009 |
20090027971 | Apparatuses, computer program products and methods for reading data from memory cells - In reading data from a memory cell, a determining circuit determines whether a received voltage value is within at least one first voltage range through a one-time read operation using a semiconductor device that senses an output current corresponding to the received voltage value. The at least one first voltage range includes a first upper limit voltage value and a first lower limit voltage value. A data value of the memory cell is set as a first data value when the received voltage value is within the specific voltage range. | 01-29-2009 |
20090046510 | Apparatus and method for multi-bit programming - Multi-bit programming apparatuses and methods are provided. A multi-bit programming apparatus may include: a first programming unit that stores data corresponding to a number of first bits in at least one first memory cell that may be connected to at least one first bit line; and a second programming unit that stores data corresponding to a number of second bits in at least one second memory cell that may be connected to at least one second bit line. Through this, it may be possible to improve data reliability and increase a number of bits to be stored in the entire memory cell. | 02-19-2009 |
20090109748 | Apparatus and method of multi-bit programming - Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may include: a first control unit that allocates any one of 2 | 04-30-2009 |
20090175076 | Memory device and method for estimating characteristics of multi-bit cell - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 07-09-2009 |
20090182934 | Memory device and method of multi-bit programming - Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated. | 07-16-2009 |
20090185417 | Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells. | 07-23-2009 |
20090190396 | Memory device and method of reading memory data - A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage. | 07-30-2009 |
20090201729 | Memory device and memory device heat treatment method - A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device. | 08-13-2009 |
20090207659 | Memory device and memory data read method - Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell. | 08-20-2009 |
20090222701 | Apparatus for determining number of bits to be stored in memory cell - Example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and may store the data in a memory based on the determined length. A memory data storage apparatus according to example embodiments may, include: a determination unit that may determine a number of bits of data and a number of bits of data detection information to be stored in a memory cell; a data receiving unit that may receive data corresponding to the determined number of bits; an error correction coding unit that may perform an error correction coding with respect to the received data and generate data detection information corresponding to the number of bits of the data detection information; and a data storage unit that may store the received data and generated data detection information in the memory cell. | 09-03-2009 |
20100254189 | Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells. | 10-07-2010 |
20100254195 | Memory device and method for estimating characteristics of multi-bit programming - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 10-07-2010 |
20110145663 | Read level control apparatuses and methods - Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate. | 06-16-2011 |
20120069654 | MEMORY DEVICE AND METHOD FOR ESTIMATING CHARACTERISTICS OF MULTI-BIT PROGRAMMING - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 03-22-2012 |