Patent application number | Description | Published |
20080254568 | Composition and Method of Forming a Device - The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting. | 10-16-2008 |
20090267057 | ORGANIC FIELD-EFFECT TRANSISTOR FOR SENSING APPLICATIONS - Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed. | 10-29-2009 |
20110239735 | ELECTRONIC SENSOR FOR NITRIC OXIDE - Disclosed is a semiconductor device ( | 10-06-2011 |
20120273734 | COMPOSITION FOR FORMING AN ORGANIC SEMICONDUCTING DEVICE - A composition for forming a semiconducting device includes an organic semiconducting material, an agent capable of inhibiting and/or preventing dewetting, and an additional substance, wherein the additional substance is provided in an amount capable of preventing initial crystallization of the composition and reducing the melting point or glass transition temperature of the composition below the melting point or glass transition temperature of the organic semiconducting material. The additional substance may be naphthalene, phenylnaphthalene, anthrance, or diphenylanthrance. | 11-01-2012 |
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