Patent application number | Description | Published |
20130076382 | Apparatus and Method for Measurement of Radiation Intensity for Testing Reliability of Solar Cell, and Method for Testing Reliability of Solar Cell - An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor. | 03-28-2013 |
20140065760 | METHOD OF FORMING ZINC OXIDE PROMINENCE AND DEPRESSION STRUCTURE AND METHOD OF MANUFACTURING SOLAR CELL USING THEREOF - A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. | 03-06-2014 |
20140216552 | Method for Manufacturing CI(G)S-Based Thin Film Comprising CU-SE Thin Film Using CU-SE Two-Component Nanoparticle Flux, and CI(G)S-Based Thin Film Manufactured by the Method - A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed. | 08-07-2014 |
20140326317 | METHOD OF FABRICATING COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL USING SIMPLIFIED CO-VACUUM EVAPORATION AND COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL FABRICATED BY THE SAME - A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500° C. to 600° C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency. | 11-06-2014 |
20140338736 | METHOD FOR MANUFACTURING CZTS BASED THIN FILM HAVING DUAL BAND GAP SLOPE, METHOD FOR MANUFACTURING CZTS BASED SOLAR CELL HAVING DUAL BAND GAP SLOPE AND CZTS BASED SOLAR CELL THEREOF - A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu | 11-20-2014 |
20150114466 | CIGS Solar Cell Having Flexible Substrate Based on Improved Supply of Na and Fabrication Method Thereof - A CIGS solar cell having a flexible substrate based on improved supply of Na. The CIGS solar cell includes a substrate formed of a flexible material, a rear electrode formed on the substrate, a CIGS light-absorption layer formed on the rear electrode, a buffer layer formed on the CIGS light-absorption layer, and a front electrode formed on the buffer layer, wherein the rear electrode comprise a single-layered Na-added metal electrode layer. A single-layered Na-added Mo electrode layer, specific resistance of which is about 1/10th the specific resistance under conditions of a process of forming a typical multilayer rear electrode, is applied to the rear electrode, thereby providing a CIGS solar cell having a flexible substrate and high conversion efficiency. | 04-30-2015 |
20150162480 | METHOD OF MANUFACTURING CI(G)S-BASED THIN FILM HAVING REDUCED CARBON LAYER, THIN FILM MANUFACTURED BY THE METHOD, AND SOLAR CELL COMPRISING THE THIN FILM - Disclosed is a method of manufacturing a CI(G)S-based thin film, in which a slurry prepared by mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent is used to reduce the carbon layer formed between the CI(G)S-based thin film and molybdenum, and which includes (a) mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent, thus preparing a slurry; (b) subjecting the slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and (c) subjecting the CI(G)S-based thin film to selenization heat treatment. | 06-11-2015 |
20150287854 | METHOD OF FABRICATING A(C)IGS BASED THIN FILM USING Se-Ag2Se CORE-SHELL NANOPARTICLES, A(C)IGS BASED THIN FILM FABRICATED BY THE SAME, AND TANDEM SOLAR CELLS INCLUDING THE A(C)IGS BASED THIN FILM - A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag | 10-08-2015 |
20150287868 | ULTRA THIN HIT SOLAR CELL AND FABRICATING METHOD OF THE SAME - Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity. | 10-08-2015 |