Patent application number | Description | Published |
20090070376 | METHOD OF CONTROLLING DISPLAY OF COMMENTS - Disclosed is a method of selectively displaying comments posted by users. The method comprises setting, by a first user, a threshold value for use in determining whether to display comments posted by users of an Internet service; and sending, by the first user, a request for displaying a page of the Internet service. The requested page contains a comment or a title of a comment posted by a second user who is assigned a reputation index. The method further comprises displaying, on a screen associated with the first user, the requested page, wherein the comment or the title of the second user is selectively redacted based on comparison of the reputation index of the second user with the threshold value of the first user. | 03-12-2009 |
20090207802 | METHOD OF PROCESSING CONTROL INFORMATION IN A MOBILE COMMUNICATION SYSTEM - A method of processing control information in a mobile communication system is disclosed, by which an RRC connection setup can be quickly completed and by which control information can be processed without an unnecessary standby of a mobile terminal. The present invention includes the steps of receiving a plurality of protocol data units transmitted plural time from a transmitting side via one common logical channel by an RLC (radio link control) entity operating in a UM (unacknowledged mode) and having a receiving window and a timer, re-ordering a plurality of the received protocol data units using sequence numbers of a plurality of the received protocol data units, the receiving window and the timer, reassembling at least one service data unit by processing a plurality of the re-ordered protocol data units, and delivering the at least one service data unit. | 08-20-2009 |
20120230080 | Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device - According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device. | 09-13-2012 |
20130048948 | INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER - Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer. | 02-28-2013 |
20130048951 | GRAPHENE SWITCHING DEVICE HAVING TUNABLE BARRIER - According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer. | 02-28-2013 |
20130051125 | METHOD OF OPERATING SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE DEVICE - According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device. | 02-28-2013 |
20130065022 | METHOD OF TRANSFERRING GRAPHENE USING TRENCH AND SUBSTRATE FOR RECEIVING GRAPHENE - A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate. | 03-14-2013 |
20130075700 | Electrode Structure Including Graphene And Field Effect Transistor Having The Same - According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure. | 03-28-2013 |
20130136080 | METHOD OF PROCESSING CONTROL INFORMATION IN A MOBILE COMMUNICATION SYSTEM - A method of processing control information in a mobile communication system is disclosed, by which an RRC connection setup can be quickly completed and by which control information can be processed without an unnecessary standby of a mobile terminal. The present invention includes the steps of receiving a plurality of protocol data units transmitted plural time from a transmitting side via one common logical channel by an RLC (radio link control) entity operating in a UM (unacknowledged mode) and having a receiving window and a timer, re-ordering a plurality of the received protocol data units using sequence numbers of a plurality of the received protocol data units, the receiving window and the timer, reassembling at least one service data unit by processing a plurality of the re-ordered protocol data units, and delivering the at least one service data unit. | 05-30-2013 |
20130168640 | INVERTER DEVICE, NAND DEVICE, NOR DEVICE, AND LOGIC DEVICE INCLUDING THE SAME - An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal. | 07-04-2013 |
20130171781 | GRAPHENE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer. | 07-04-2013 |
20130175506 | THREE-DIMENSIONAL GRAPHENE SWITCHING DEVICE - A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate. | 07-11-2013 |
20130176072 | TOUCH SENSOR AND TOUCH PANEL INCLUDING THE SAME - A touch sensor using a graphene diode and/or a touch panel including the touch sensor. The touch sensor includes a first sensing electrode configured to sense a touch; a first output line configured to transmit an electrical signal; and a first diode device including a first control terminal connected to the first sensing electrode, a first anode terminal connected to a voltage application unit, and a first cathode terminal connected to the first output line. | 07-11-2013 |
20130277644 | GRAPHENE SWITCHING DEVICE INCLUDING TUNABLE BARRIER - A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode. | 10-24-2013 |
20140014905 | FIELD EFFECT TRANSISTOR USING GRAPHENE - According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode. | 01-16-2014 |
20140091274 | MEMORY DEVICES HAVING UNIT CELL AS SINGLE DEVICE AND METHODS OF MANUFACTURING THE SAME - In one embodiment, a memory device includes a first electrode layer on a substrate; a data storing layer on the first electrode layer; and a second electrode layer on the data storing layer. At least one of the first and second electrode layers may be formed of a material having a conduction band offset that varies with an applied voltage. One of the first and second electrode layers may be connected to a bit line and the other may be connected to a word line. The first electrode layer may include one of graphene and metastable oxide. The second electrode layer may include one of graphene and metastable oxide. | 04-03-2014 |
20140097403 | TUNNELING FIELD-EFFECT TRANSISTOR INCLUDING GRAPHENE CHANNEL - According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate. | 04-10-2014 |
20140097404 | MEMORY DEVICES INCLUDING GRAPHENE SWITCHING DEVICES - A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element. | 04-10-2014 |
20140117313 | GRAPHENE SWITCHING DEVICE HAVING TUNABLE BARRIER - According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode. | 05-01-2014 |
20140141600 | METHODS OF PREPARING GRAPHENE AND DEVICE INCLUDING GRAPHENE - A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film. | 05-22-2014 |
20140158989 | ELECTRONIC DEVICE INCLUDING GRAPHENE - According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 10 | 06-12-2014 |
20140231752 | GRAPHENE DEVICE AND ELECTRONIC APPARATUS - A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor. | 08-21-2014 |
20140231820 | MEMORY DEVICE USING GRAPHENE AS CHARGE-TRAP LAYER AND METHOD OF OPERATING THE SAME - A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges. | 08-21-2014 |
20140299944 | GRAPHENE DEVICES AND METHODS OF FABRICATING THE SAME - A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the first electrode, the graphene layer, and the semiconductor substrate. | 10-09-2014 |